• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.309-309
• /
• 2009

In-Ga-Zn-O (IGZO) has drawn much attention as a compatible material for transparent thin film transistors (TTFT) channel layer due to its high mobility and optical transparency at low processing temperatures. In this work, we investigated the effect of oxygen ambient on structural, electrical and optical properties of amorphous In-Ga-Zn-O (IGZO) thin films by using pulsed laser deposition (PLD). The films were deposited at various oxygen pressures and the structural, electrical and optical properties were investigated. X-ray diffraction (XRD) analysis showed that amorphous IGZO films were grown at all oxygen pressures. The surface morphology and optical properties with various oxygen pressures were studied by field emission scanning electron microscopy (FE-SEM) and UV-VIS spectroscopy, respectively. The grain boundary was observed more apparently and the calculated optical band gap became larger as oxygen pressure increased. To examine the electrical properties, Hall-effect measurements were carried out. The films showed high mobility.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• v.3 no.4
• /
• pp.399-422
• /
• 2009

Although current wireless mesh network (WMN) applications experience a perceptually uninterrupted hand-off, their throughput after the hand-off event may be significantly degraded due to the low available bandwidth of the mobile client's new master. In this paper, we propose a novel mobility management scheme for 802.11-based WMNs that enables both seamless hand-off for transparent communications, and bandwidth awareness for stable application performance after the hand-off process. To facilitate this, we (i) present a new buffer moment in support of the fast Layer-2 hand-off mechanism to cut the packet loss incurred in the hand-off process to zero and (ii) design a dynamic admission control to grant joining accepts to mesh clients. We evaluate the benefits and drawbacks of the proposal for both UDP and TCP traffic, as well as the fairness of the proposal. Our results show that the new scheme can not only minimize hand-off latency, but also maintain the current application rates of roaming users by choosing an appropriate new master for joining.

• Proceedings of the KIEE Conference
• /
• 2006.04b
• /
• pp.52-56
• /
• 2006

Some of factors affecting photo-conversion efficiency of dye sensitized solar cells (DSCs) are discussed in terms of $TiO_2$ electrodes. The first topic is on the surface modification of $TiO_2$ nano-particles, which is associated with electron traps on the surface of $TiO_2$ nano-particles. The surface is modified with dye molecules under pressurized $CO_2$ atmosphere to increase the surface coverage of $TiO_2$ nano-particles with dye molecules. This increases Jsc because of an increase in the amount of dye molecules and a decrease in the amount of trapping sites on $TiO_2$ nano-particles. In addition, the decrease in the amount of trap sites increases Voc because decreases in Voc are brought about by the recombination of $I_2$ molecules with electrons trapped on the $TiO_2$ surfaces. Selective staining for tandem cells is proposed. The second topic is on the contact between a $SnO_2$/F transparent conductive layer (TCL) and nano-particles. Polishing the TCL surfaces with silica nano-particles increases the contact, resulting in Jsc increases. The third topic is the fabrication of ion-paths in $TiO_2$ layers. Electro-spray coating of $TiO_2$ nano-particles onto TCL is shown to be effective for fabricating ion-paths in $TiO_2$ layers, which increases Jsc.

• Journal of Sensor Science and Technology
• /
• v.21 no.4
• /
• pp.283-286
• /
• 2012

This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.11 no.10
• /
• pp.3853-3858
• /
• 2010

This paper shows electrical analysis of the silicon solar cell according to the various ARC thickness using Medici program. we built a mesh structure of the solar cell that use ARC consisting of ITO(Indium-Tin-Oxide) transparent electrode, for the Medici modeling. About various oxide layer thickness of the ARC for 30 nm, 60 nm, 90 nm, changes of the I-V curve, Isc, Voc, transmittance and external collection efficiency performed according to wavelength of Incident ray. Simulation results show maximum power 22 mW/$cm^2$, fill factor 0.83 in condition of 60 nm ITO thickness.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.128-128
• /
• 2003

Electrochromism (EC) is defined as a phenomenon in which a change in color takes place in the presence of an applied voltage. Because of their low power consumption, high coloration efficiency, EC devices have a variety of potential applications in smart windows, mirror, and optical switching devices. An EC devices generally consist of a transparent conducting layer, electrochromic cathodic and anodic coloring materials and an ion conducting electrolyte. EC has been widely studied in transition metal oxides(e.g., WO$_3$, NiO, V$_2$O$\sub$5/) Among these materials, WO$_3$ is a most interesting material for cathodic coloration materials due to its lush coloration efficiency (CE), large dynamic range, cyclic reversibility, and low cost material. WO$_3$ films have been prepared by a variety of methods including vacuum evaporation, chemical vapor deposition, electrodeposition process, sol-gel synthesis, sputtering, and laser ablation. Sol-gel process is widely used for oxide film at low temperature in atmosphere and requires lower capital investment to deposit large area coating compared to vacuum deposition process.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.120-120
• /
• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.11
• /
• pp.961-968
• /
• 2009

In this work, transparent conductive oxide(TCO) films such as $In_2O_3-SnO_2$(ITO) and $In_2O_3-ZnO$(IZO) were prepared on polyethylene naphthalene(PEN) and glass substrates by using rf-magnetron sputtering system. The TCO films deposited on PEN substrate show very poor conductivity as compared to that of the TCO films deposited on glass substrates. From the results of the residual gas analysis(RGA) test, this poor stability of plastic substrate is presumed to be caused by the deteriorated adhesion between the TCO films and the plastic substrate due to outgassing from the plastic substrate during deposition of TCO films. From our experiment, it is found that the vaporization of some defects in the plastic substrates deteriorate the adhesion of the TCO films to the plastic substrate, because the most plastic substrates containing the water vapor and/or other adsorbed particles such as organic solvents. Mixing of these gases vaporized in the sputtering process will also affect the electrical property of the deposited TCO films. Inorganic thin composite $(SiO_2)_{40}(ZnO)_{60}$ film as a gas barrier layer is coated on the PEN substrate to protecting the diffusion of vapors from the substrate, so that the TCO films with an improved quality can be obtained.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1268_1269
• /
• 2009

This work shows the effect of rapid thermal annealing (RTA) on properties of indium-zinc oxide (IZO) thin films. The RTA temperatue was controlled between 300 and $500^{\circ}C$ under the two different ambient conditions such as vacuum and oxygen. Structural, optical, and electrical properties of IZO films were characterized in terms of RTA conditions. XRD and resistivity measurements showed that crystallization for IZO films occurred at an RTA temperature of about $400^{\circ}C$. For the IZO film treated at $500^{\circ}C$ of RTA, the resistivity, carrier concentration, hall mobility, and transmittance were approximately $10^2{\Omega}cm$, $10^{15}cm^{-3}$, $10cm^2/V{\cdot}s$, and 85%, respectively, which would be suitable for its application to the channel layer in transparent thin film transistors.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1277_1278
• /
• 2009

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.