• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1087-1090
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• 2008

This paper presents the electro-luminescence (EL) display lamp which is patterned on a curved surface by the pad printing method. The printing methods, including the gravure, screen, flexo, inkjet, and pad printing, have an advantage of one-step direct patterning. However, in general, the printing and semi-conductor process, except pad printing method, cannot be applied for patterning on a curved surface. Thus, in this paper, we used pad printing method for patterning an EL display lamp on a curved surface. The EL display lamp consists of 5 layers: Bottom electrode; Dielectric layer; Phosphor; Transparent electrode; Bus electrode. Finally, we printed EL display lamp on a dish, which has a radius of curvature 80mm. The EL display lamp was driven at AC 200V of 1kHz.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.161.1-161.1
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• 2017

최근 OLED기술을 조명에 응용하고자 하는 연구가 급증되고 있다. 이는 유연하고, 대면적 확장이 가능하며, 다양한 형태 구현에 있어 장점이 존재하기에 차세대 감성조명으로써 주목을 받고 있다. 고효율의 OLED 조명을 위해서는 저저항/고유연의 투명전극 소재의 개발을 통해 전기적 손실을 최소화해야하고, 광추출층의 적용을 통해 내부에서 생성된 빛을 외부로 잘 방출시켜 광학적 손실을 최소화해야한다. 이를 위해 많은 다양한 투명전극에 대한 연구와 광추출을 위한 방법에 대한 연구가 진행이 되고 있고, 두 가지 효과를 한번에 얻을 수 있는 집적기판에 대한 수요가 높아지고 있다. 본 연구는 인쇄공정과 플라즈마 공정을 통해, 미세배선이 함몰된 집적 기판을 개발하여 저저항/고유연 투명전극을 구현하였고 기판상 나노구조체 형성을 통해 광추출 효율을 기존에 비해 20% 이상 향상시킬 수 있었다. 이러한 기판은 향후 대면적 OLED 조명에 응용이 가능할 것이라 전망한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.464-464
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• 2011

We report a method to fabricate a large-area metal nanowire-grid polarizer. Liquid-bridge-mediated nanotransfer molding (LB-nTM) is based on the direct transfer of metal nanowires from a mold to a transparent substrate via liquid layer. A metal particle solution is used as an ink in the LB-nTM, which can be used for the formation of metal nanowires. The nanowires have higher depth are preferred for high transmittance. The height of nanowires that we made is about 140 nm. Large-area WGP is fabricated with good average transmittance of 74.89% in our measuring range.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.295-296
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• 2015

최근 indium tin oxide (ITO)의 높은 전기 전도도 및 광투과율을 이용하여 줄 발열을 기초로 하는 투명 면상 발열체에 대한 연구가 활발히 진행 되고 있다. 하지만 단일 ITO박막으로 제작한 투명 면상 발열체는 다양한 문제점들을 가지고 있다. 따라서 본 연구에서는 단일 ITO박막을 이용한 투명 면상 발열체의 단점을 보완하기 위하여 하이브리드 구조 투명 면상 발열체를 제작하여 금속 삽입층의 두께에 따른 전기전도도, 광투과율, 면 발열성능을 평가 하였다. 그 결과 하이브리드 구조의 투명 면상발열체의 발열량, 온도 균일성 등이 기존의 단일 ITO 박막의 투명 면상 발열체보다 효율이 크게 향상 된 것을 확일 할 수 있었다.

• Journal of the Optical Society of Korea
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• v.2 no.1
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• pp.13-21
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• 1998

Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.260-264
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• 2004

The problem of polyaniline (PANi) sensor has been poor mechanical and chemical stability under atmosphere condition. In order to overcome these problems, the PANi sensor coated with polyvinylidenefluoride ($PVF_2$) was employed. The morphology of $PVF_2$ coated-PANi layer was showed smooth and transparent properties at 15% concentration of coating solution. The resistance of $PVF_2$ coated-PANi was kept at constant value and had a good stability at long-term periods in presence of humidity.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.235-235
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• 2013

We reported on the characteristics of organic solar cells (OSCs) fabricated on $HNO_3$-treated multilayer graphene (MLG) transparent electrodes. MLG electrodes were prepared using a chemical vapor deposition and a multi-transfer process. Compared to organic solar cells (OSCs) on the ITO electrodes had a fill factor of 65.97%, and a power conversion efficiency (PCE) of 3.364%, OSCs on the MLG (three-layer graphene) electrodes with sheet resistance of $274{\pm}1{\Omega}$/square and transparency of 92.1% had a fill factor of 43.46%, and a power conversion efficiency (PCE) of 2.019%. However, OSCs on the HNO3-treated MLG electrodes with lower sheet resistance of $119{\pm}1{\Omega}$/square had a fill factor of 57.54%, and a PCE of 2.861%. The results would provide a promising method to improve the performance of large-area OSCs based on MLG electrodes.

• Journal of Korean Ophthalmic Optics Society
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• v.11 no.2
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• pp.115-119
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• 2006

Electromagnetic shielding, transparent ITO coating layers have deposited on ocular lens substrate by magnetron sputtering. We investigated the effect induced by the substrate temperature on coating layer. The characteristics of the coating layers were analyzed using surface profiler, four-point probe, XRD, spectrophotometer and Auger Electron spectroscopy. As substrate temperature became higher, carrier concentration was increased and transmittance in the visible region was increased, too.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.543-544
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• 2006

Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide ($ZrO_2$) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility $.66\;cm^2$/V s and $I_{on}/I_{off}$>$10^5$ was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.15-15
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• 2008

산화물 반도체가 실리콘 기반의 기술을 대체할 새로운 기술로써 주목을 받기 시작하면서, 산화아연을 이용한 박막트랜지스터가 많은 주목을 받고 있다. 여기에 기존의 $SiO_2$를 대체할 새로운 High-k Material에 대한 연구 또한 진행되고 있는데, 이들의 가장 큰 문제점중 하나는 Interface Charge Trap이며, 그에 따른 결과로 히스테리시스 특성이 나타나게 되고, 이는 소자의 신뢰성에 큰 걸림돌이 되고 있다. 이번 연구에서는, High-k Material들 중의 하나인, $HfO_2$를 게이트 절연막으로 사용함에 있어서 Interface Charge Trap이 발생하는 문제를 해결하고자 하며, Low-k Material중에서 비교적 높은 유전상수를 갖는 $Al_2O_3$를 Buffer Layer로써 사용하여, 히스테리시스 특성을 향상 시켰다.