• Applied Science and Convergence Technology
• /
• v.25 no.2
• /
• pp.42-45
• /
• 2016

A two-dimensional metal hole array (2DMHA) structure is fabricated by conventional photo-lithography and electron beam evaporation. The transmittance of the 2DMHA is measured at long wave infrared (LWIR) wavelengths (${\lambda}{\sim}10$ to $24{\mu}m$). The 2DMHA sample shows transmittance of 70 and 67% at $15.4{\mu}m$ due to plasmonic resonance with perforated silver and gold thin films, respectively, under surface normal illumination at LWIR wavelengths. The measured infrared spectrum is separated into two peaks when the size of the hole becomes larger than a half-pitch of the hole array. Six degenerated plasmon modes (1,0) at the metal/Si surface split to three modes at an incident beam angle of $45^{\circ}$ with respect to the surface normal direction, and wavelength shifts of the transmitted spectrum are observed in a red shift and blue shift at the same time.

• Journal of Electrical Engineering and Technology
• /
• v.13 no.4
• /
• pp.1644-1654
• /
• 2018

Eigenvalue distributions for a periodic metal-insulator-metal waveguide, classified into the point spectrum and the discretized continuous spectrum (DCS), are investigated as functions of frequencies, gap widths, and periods. Muller's method is suggested for solving exact eigenvalues, and we propose the scheme for finding proper initial values in the Muller's method by considering only ${\Re}e({\varepsilon}_r)$ in the dispersion equation. We then find that anti-crossing behavior, repulsive effect between the point spectrum and the DCS, becomes stronger when the real parts of the roots in the point spectrum have smaller values. Finally, we examine the transmittances of a single subwavelength slit for real metals using the mode matching technique. The transmittances in real metals similarly follow those of the perfect electric conductor (PEC) at low frequencies, while the patterns at higher frequencies begin to differ from the PEC.

• Journal of Korean Ophthalmic Optics Society
• /
• v.6 no.2
• /
• pp.37-46
• /
• 2001

In this study, We compared the properties of tinted and colored lenses with the standards m the ordinary optical properties, coloration, UV, IR and luminous transmittance, color acceptance for traffic signal, and chromaticity. The UV, lR and luminous transmittance was analysed in the range of 175 nm to 3000 nm by using a UV-Vis-IR spectrophotometer and was used in the synthesis of spectrum of various color lens. A experimental function was made from the slope obtained from the transmittance change as a function of coloration time. We could expect the ordinary optical properties and color acceptance for traffic signal of various color lenses with the requirements of US standard(ANSI Z-80.3).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.788-791
• /
• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.1
• /
• pp.49-55
• /
• 2023

The deposition of indium zinc oxide (IZO) thin films was carried out on substrate at room temperature by RF magnetron sputtering. The effects of substrate temperature, RF power and deposition pressure were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, structure, and transmittance. As the RF power increases, the resistivity gradually decreases, and the transmittance slightly decreases. For the variation of deposition pressure, the resistivity greatly increases, and the transmittance is decreased with increasing deposition pressure. As a result, it was demonstrated that an IZO film with the resistivity of 3.89 × 10^-4 Ω∙cm, the hole mobility of 51.28 cm²/Vs, and the light transmittance of 86.89% in the visible spectrum at room temperature can be prepared without post-deposition annealing.

• Proceedings of the Optical Society of Korea Conference
• /
• 2006.07a
• /
• pp.487-487
• /
• 2006

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.25 no.11
• /
• pp.26-32
• /
• 2011

In this study, a standard illuminant A type LED that has similar emission spectrum as the standard illuminant A was developed using LED chip(emission peak: 405[nm]) and four types of phosphors(blue, green orangered and red). Using the design of experiment for spectrum control, the trend of the change of spectrum shape influenced by the change of interaction among phosphors and their density could be examined. Computer simulation through the optimization of the design of experiment revealed that, among four phosphors, the most influential one on the shape of the spectrum was green phosphor. Using the obtained optimal combination ratio of the four phosphors, an alternative LED illuminant to the actual standard illuminant A was developed and the spectrums of these two were confirmed identical. Using this standard illuminant A type LED, a portable transmittance meter with the range of measurement error of ${\pm}1.0$[%] was developed.

• Journal of the Optical Society of Korea
• /
• v.8 no.3
• /
• pp.104-107
• /
• 2004

The periodic transmission spectrum of a solid etalon for wide-band capability is analyzed both theoretically and experimentally. In the transmission spectrum with an incident area of a photodetector, the peak wavelength and transmittance are deeply dependent on the incident angle and the divergence angle of the input laser beam. A thermal adjustment for a solid etalon is an optional way to control the transmission spectrum instead of the inefficient fine-angle alignment. In the result, we present the deviations of free spectral range (FSR) by the change in angle and temperature over wide wavelength range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.9
• /
• pp.798-801
• /
• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided (ITO)/zinc oxide (ZnO)/Ag/zinc oxide (ZnO)/ITO. With about 50 nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550 nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.14 no.6
• /
• pp.1465-1468
• /
• 2010

The wet etching is a process using chemical solution and occurring chemical reaction on substrate surface. when we do wet etching process, we have to consider stoichiometry, etching time and temperature of etchant for good resolution. In this experiment, we used Cr, Al andIndium-tin-oxide (ITO) metal and we deposited them with DC sputtering machine. The Cr thin film metal thickness is about $1300{\AA}$, ITO films show a low electrical resistance and high transmittance in the visible range of an optical spectrum and Ai film is used for signal line. We measured and analysed wet etching properties on the metal thin films.