• Title/Summary/Keyword: Transmission-Side Mass

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What Is the Key Vacuum Technology for OLED Manufacturing Process?

  • Baek, Chung-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.95-95
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    • 2014
  • An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

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A Low-latency L2 Handoff Scheme between WiBro and cdma2000 Mobile Networks (WiBro와 cdma2000 이동통신망간 적은 지연을 위한 L2 핸드오프 방안)

  • Lee, Geon-Baik;Cho, Jin-Sung
    • The KIPS Transactions:PartC
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    • v.13C no.7 s.110
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    • pp.873-880
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    • 2006
  • Since various networks are deployed and the most of users request higher mobility, there are many researches about the interworking between widely deployed 3G network and rapidly boarded WLAN. On the other side, WiBro is focused on as a next generation network, because many people expect that WiBro gives satisfaction about the enough mobility and mass data transmission. So the study of the integration between WiBro and cdma2000 will show better effects than the present study of the integration between WLAN and cdma2000. The L2 handoff proposed in this paper takes advantages over the existing L3 handoff scheme because it does not require the L3 procedure for the mobility unlike the L3 handoff. Through extensive computer simulations, the efficiency of the proposed scheme has been validated.

Formation of Ni-W-P/Cu Electrodes for Silicon Solar Cells by Electroless Deposition (무전해 도금을 이용한 Si 태양전지 Ni-W-P/Cu 전극 형성)

  • Kim, Eun Ju;Kim, Kwang-Ho;Lee, Duk Haeng;Jung, Woon Suk;Lim, Jae-Hong
    • Journal of the Korean institute of surface engineering
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    • v.49 no.1
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    • pp.54-61
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    • 2016
  • Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).