• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1181-1187
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• 2015

Sulfur hexafluoride (SF₆) gas is used widely in electric power equipment such as Gas Insulated Switchgear (GIS), Gas Insulation transmission Line (GIL), and Gas Circuit Breaker (GCB). But applications of SF₆ should be restricted because SF6 gas is one of the greenhouse effect gases. To reduce use of SF₆ gas, a study on eco-friendly alternative insulation medium is needed. In this paper, we investigated lightning impulse (LI) breakdown of dry-air which is attracting attention as an ecofriendly alternative gas and the LI breakdown of hybrid insulation combined with dry-air and solid insulation (Room-Temperature Vulcanizing Silicone Rubber-RTV SIR) and dry-air in inhomogeneous fields according to gap distance and pressure. The experiment results showed that the LI breakdown strength of hybrid insulation system was higher than that of dry-air insulation system. It was verified that the development of technology related to eco-friendly power apparatus compact such GIS, GCB and GIL can be used as basic research data.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2402-2411
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• 2018

Fluoronitriles-$CO_2$ gas mixtures are promising alternatives to $SF_6$ in environmentally-friendly gas-insulated transmission lines (GILs). Insulating gas heat transfer characteristics are of major significance for the current-carrying capacity design and operational state monitoring of GILs. In this paper, a three-dimensional calculation model was established for a GIL using the thermal-fluid coupled finite element method. The calculated results showed close agreement with experimentally measured data. The temperature distribution of a GIL filled with the Fluoronitriles-$CO_2$ mixture was obtained and compared with those of GILs filled with $CO_2$ and $SF_6$. Furthermore, the effects of the mixture ratio of the component gases and the gas pressure on the temperature rise and current-carrying capacity of the GIL were analyzed. Results indicated that the heat transfer performance of the Fluoronitriles-$CO_2$ gas mixture was better than that of $CO_2$ but worse than that of $SF_6$. When compared with $SF_6$, use of the Fluoronitriles-$CO_2$ gas mixture caused a reduction in the GIL's current-carrying capacity. In addition, increasing the Fluoronitriles gas component ratio or increasing the pressure of the insulating gas mixture could improve the heat dissipation and current-carrying capacity of the GIL. These research results can be used to design environmentally-friendly GILs containing Fluoronitriles-$CO_2$ gas mixtures.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.601-606
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• 2000

Nickel mono-silicide(NiSi) shows no increase of resistivity as the line width decreases below 0.15$\mu\textrm{m}$. Furthermore, thin silicide can be made easily and restrain the redistribution of dopants, because NiSi in created through the reaction of one nickel atom and one silicon atom. Therefore, we investigated the deposition condition of Ni films, heat treatment condition and basic properties of NiSi films which are expected to be employed for sub-0.15$\mu\textrm{m}$ class devices. The nickel silicide film was deposited on the Si wafer by using a dc-magnetron sputter, then annealed at the temperature range of $150~1000^{\circ}C$. Surface roughness of each specimen was measured by using a SPM (scanning probe microscope). Microstructure and qualitative composition analysis were executed by a TEM-EDS(transmission electron microscope-energy dispersive x-ray spectroscope). Electrical properties of the materials at each annealing temperature were measured by a four-point probe. As the results of our study, we may conclude that; 1. SPM can be employed as a non-destructive process to monitor NiSi/NiSi$_2$ transformation. 2. For annealing temperature over $800^{\circ}C$, oxygen pressure $Po_2$ should be kept below $1.5{\times}10^{-11}torr$ to avoid oxidation of residual Ni. 3. NiSi to $NiSi_2$ transformation temperature in our study was $700^{\circ}C$ from the four-point probe measurement.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1590-1592
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• 1999

We have fabricated good quality superconducting $YBa_2Cu_3O_{7-{\delta}}$ thin films on Hastelloy(Ni-Cr-Mo alloys) with $CeO_2$ buffer layers by in-situ pulsed laser deposition in a multi-target processing chamber. Using one of electrical properties of YBCO superconducting which the resistance approaches to zero dramatically on transition temperature, we have researched to make power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to make films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting layer and non-crystallization of YBCO on amorphous substrate. From early research, two ways-using textured metallic substrate and buffer layer-were proposed to overcome theses difficulties. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with $3.82{\AA}$ of a-axis lattice parameter of YBCO on (110) direction of $CeO_2$. In order to enhance the crystallization of YBCO films on metallic substrates we deposited $CeO_2$ buffer layers at varying temperature $700^{\circ}C$ to $800^{\circ}C$ and $O_2$ pressure. By X-ray diffraction, we found that each domination of (200) and (111) orientations were strongly relied upon the deposition temperature in $CeO_2$ layer and the change of the domination of orientation affects the crystallization of YBCO upper layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.392-396
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• 1999

Superconducting YBa$_2Cu_3O_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy(Ni-Cr-Mo alloys) with CeO$_2$ buffer layer in-situ by pulsed laser deposition in a multi-target processing chamber. To apply superconducting property on power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to grow the YBCO films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting overlayers and non-crystallization of YBCO on amorphous substrate. It is necessary to use a buffer layer to overcome the difficulties. We have chosen CeO$_2$ as a buffer layer which has cubic structure of 5.41 ${\AA}$ lattice parameter and only 0.2% of lattice mismatch with 3.82 ${\AA}$ of a-axis lattice parameter of YBCO on [110] direction of CeO$_2$ In order to enhance the crystallization of YBCO films on metallic substrates, we deposited CeO$_2$ buffer layers with varying temperature and 02 pressure. By XRD, it is observed that dominated film orientation is strongly depending on the deposition temperature of CeO$_2$ layer. The dominated orientation of CeO$_2$ buffer layer is changed from (200) to(111) by increasing the deposition temperature and this transition affects the crystallization of YBCO superconducting film on CeO$_2$ buffered Hastelloy.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1378-1380
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• 2001

Ohmic contacts have been fabricated on p-type 4H-SiC using Pt/Ti. Low resistivitf Ohmic contacts of Pt/Ti to p-type 4H-SiC were investigated. Specific contact resistances were measured using the transmission line model method, and the physical properties of the contacts were examined using x-ray diffraction, scanning electron microscopy. Ohmic behavior with linear current-voltage characteristics was observed following anneals at $900^{\circ}C$ for 90sec at a pressure of $3.4{\times}10^{-5}$ Torr. The Pt/Si/Ti films was measured lower value of the specific contact resistance by the annealing process, and the contact resistances were improved more than one order compared to Ti contact the annealed sample. Scanning electron microscopy shows that the Pt layer effectively reduce the oxidation of Ti films. And results are obtained as $4.6{\times}10^{-4}$ ohm/$cm^2$ for a Pt/Ti metal structure after a vacuum annealing at $900^{\circ}C$ for 90sec. Titanium has a relatively high melting point, thus Ti-based metal contacts were attempted in this study.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.396-399
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• 2002

Intense quasi-monochromatic x-ray irradiation from the linear plasma target is described. The plasma x-ray generator employs a high-voltage power supply, a low-impedance coaxial transmission line, a high-voltage condenser with a capacity of about 200 nF, a turbo-molecular pump, a thyristor pulse generator as a trigger device, and a flash x-ray tube. The high-voltage main condenser is charged up to 55 kV by the power supply, and the electric charges in the condenser are discharged to the tube after triggering the cathode electrode. The x-ray tube is of a demountable triode that is connected to the turbo molecular pump with a pressure of approximately 1 mPa. As electron flows from the cathode electrode are roughly converged to the molybdenum target by the electric field in the tube, the weakly ionized plasma, which consists of metal ions and electrons, forms by the target evaporating. In the present work, the peak tube voltage was almost equal to the initial charging voltage of the main condenser, and the peak current was about 20 kA with a charging voltage of 55 kV. When the charging voltage was increased, the linear plasma x-ray source grew, and the characteristic x-ray intensities of K-series lines increased. The quite sharp lines such as hard x-ray lasers were clearly observed. The quasi-monochromatic radiography was performed by a new film-less computed radiography system.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.