• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.452-452
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• 2013

ZnO is one of the most attractive transparent conductive oxide (TCO) films because of low toxicity, a wide band gap material and relatively low cost. However, the electrical conductivity of un-doped ZnO is too high to use it as TCO films in practical application. To improve electrical properties of undoped ZnO, transition metal (TM) doped ZnO films such as Al doped ZnO or Ti doped ZnO have been extensively studied. Here, we prepared Ti doped ZnO thin films by atomic layer deposition (ALD) for the application of TCO films. ALD was used to prepare Ti-doped ZnO thin films due to its inherent merits such as large area uniformity, precise composition control in multicomponent thin films, and digital thickness controllability. Also, we demonstrated that ALD method can be utilized for fabricating highly ordered freestanding nanostructures of Ti-doped ZnO thin films by combining with BCP templates, which can potentially used in the photovoltaic applications.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.161-161
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• 2011

Titanium (IV) dioxide (TiO2) is one of the most attractive d-block transition metal functional oxides. Many applications of TiO2 such as dye-sensitized solar cells and photocatalyst have been widely investigated. To utilize solar energy efficiently, TiO2 should be well-aligned with a high surface area and promote the charge separation as well as electron transport. Herein, the TiO2 nanotubes were successfully fabricated by a template-directed method. The electrospun PEO(Polyethylene oxide, Molecular weight, 400k)fibers were used as a soft template for coating with titanium dioxide using an atomic layer deposition (ALD) technique. The deposition was conducted onto a template at 50$^{\circ}C$ by using titaniumisopropoxide [Ti(OCH(CH3)2)4; TTIP] as precursors of TiO2. While the as-deposited TiO2 layers onto PEO fibers were completely amorphous with atomic layer deposition, the TiO2 layers after calcination at 500$^{\circ}C$ for 1 h were properly converted into polycrystalline nanostructured hallow TiO2 nanotube. The TiO2 nanotube with high surface area can be easily handled and reclaimed for use in future applications related to solar cell fabrications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.128-134
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• 1996

In this study, the thermal and optical properties of multicomponent glass optical fiber by adding heavy metal oxide Ga$_2$O$_3$were investigated. The fiber samples were made by rod in tube method. The optical loss of fiber was measured in 0.3~1.8${\mu}{\textrm}{m}$ wavelength region. As Ga$_2$O$_3$increased up to 20wt%, the transition and softening temperature of bulk glass were increased from 495$^{\circ}C$ to 579$^{\circ}C$ and from 548$^{\circ}C$ to 641$^{\circ}C$respectively. Whereas the thermal expansion coefficient was decreased from 102 to 79.1$\times$10$^{-7}$ $^{\circ}C$. The refractive index was increased from 1.621 to 1.665, and IR cut-off wavelength was enlarged from 4.64${\mu}{\textrm}{m}$ to 6.1${\mu}{\textrm}{m}$. The optical loss of fiber was decreased and more remarkably decreased in 1.146${\mu}{\textrm}{m}$~1.8${\mu}{\textrm}{m}$ wavelength region.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.636-640
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• 2020

Due to the serious air pollution problem, interest in eco-friendly vehicles is increasing. Solving the problem of pollution will necessitate the securing of high energy storage technology for batteries, the driving force of eco-friendly vehicles. The reason for the continuing interest in the transition metal oxide LiMO₂ as a cathode material with a layered structure is that lithium ions reveal high mobility in two-dimensional space. Therefore, it is important to investigate the effective intercalation and deintercalation pathways of Li⁺, which affect battery capacity, to understand the internal structure of the cathode particle and its effect on the electrochemical performance. In this study, for the cathode material, high nickel Ni_0.8Co_0.1Mn_0.1(OH)₂ precursor is synthesized by controlling the ammonia concentration. Thereafter, the shape of the primary particles of the precursor is investigated through SEM analysis; X-ray diffraction analysis is also performed. The electrochemical properties of LiNi_0.8Co_0.1Mn_0.1O₂ are evaluated after heat treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.193-193
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• 2013

실리콘 박막 태양전지는 광 흡수층에서 형성된 정공과 전자를 효과적으로 분리하기 위해 p형과 n형으로 도핑된 층을 형성하는 p-i-n구조를 갖게 된다. 이러한 도핑 층을 형성하기 위해 B2H6와 PH3와 같은 독성 가스를 사용하기 때문에, 공정 안정성과 환경적인 이슈가 대두된다. 또한 도핑은 추가적으로 실리콘 박막 태양전지의 안정화 효율을 지속적으로 저하시키는 요인이 된다. 이러한 문제점을 개선하기 위하여, 창층으로 MoO3, V2O5, WO3 등과 같이 높은 일함수를 갖는 전이금속 산화물을 사용하고, 광 흡수층으로 i-Si:H을, 후면 전극으로 낮은 일함수를 나타내는 LiF/Al을 사용하였다. 전이금속 산화물과 LiF/Al의 큰 일함수 차이에 의해서 흡수층인 i-Si:H 에서 생성된 캐리어들은 효과적으로 분리되고 수집이 된다. 금속 산화물은 스퍼터링 공정에 의하여 이루어졌으며, 스퍼터링 공정조건에 따라 산화도가 조절되며, 이러한 산화도에 따라 태양전지의 셀 특성이 결정된다. 도핑 층이 없는 새로운 형태의 실리콘 박막 태양전지는 기존 비정질 실리콘 박막 태양전지에 비해 높은 안정화 효율을 나타내며, 이는 도핑 층이 없기 때문에 기존 실리콘 박막 태양전지의 열화현상에 따른 효율저하가 발생하지 않는 장점을 지내고 있다.

• Safety and Health at Work
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• v.12 no.3
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• pp.403-415
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• 2021

Background: This study aimed to assess the possibility of benzene exposure in workers of a Korean semiconductor manufacturing company by reviewing the issued patents. Methods: A systematic patent search was conducted with the Google "Advanced Patent Search" engine using the keywords "semiconductor" and "benzene" combined with all of the words accessed on January 24, 2016. Results: As a result of the search, we reviewed 75 patent documents filed by a Korean semiconductor manufacturing company from 1994 to 2010. From 22 patents, we found that benzene could have been used as one of the carbon sources in chemical vapor deposition for capacitor; as diamond-like carbon for solar cell, graphene formation, or etching for transition metal thin film; and as a solvent for dielectric film, silicon oxide layer, nanomaterials, photoresist, rise for immersion lithography, electrophotography, and quantum dot ink. Conclusion: Considering the date of patent filing, it is possible that workers in the chemical vapor deposition, immersion lithography, and graphene formation processes could be exposed to benzene from 1996 to 2010.

• Korean Chemical Engineering Research
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• v.60 no.1
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• pp.125-131
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• 2022

The microstructure of highly aggregated colloidal dispersions was investigated by probing the rheological behavior of magnetic suspensions. The dynamic moduli as functions of frequency and strain amplitude are shown to closely resemble that of colloidal gels indicating the formation of network structure. The two types of characteristic critical strain amplitudes, γ_c and γ_y, were characterized in terms of the changing microstructure. The amplitude of γ_c indicates the transition from linear to nonlinear viscoelasticity and depends only on particle volume fraction not magnetic interactions. The study of scaling behavior suggests that it is related to the breakage of interfloc, i.e., floc-floc structure. However, yielding strain, γ_y, was found to be independent of particle volume fraction as well as magnetic interaction. It relates to extensive deformation resulting in yielding behavior. The scaling of elastic constant, G_e, implies that this yielding behavior and hence γ_y is due to the breakage of long-range interfloc interactions. Also, the deformation of flocs due to increase strain was indicated from the investigation of the fractal nature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Korean Journal of Materials Research
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• v.22 no.6
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• pp.316-320
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• 2012

$Co_3O_4$, $Al_2O_3$ and $Co_3O_4$/$Al_2O_3$ mesoporous powders were prepared by a sol-gel method with starting matierals of aluminum isopropoxide and cobalt (II) nitrate. A P123 template is employed as an active organic additive for improving the specific surface area of the mixed oxide by forming surfactant micelles. A transition metal cobalt oxide supported on alumina with and without P123 was tested to find the most active and selective conditions as a heterogeneous catalyst in the reaction of styrene epoxidation. A bBlock copolymer-P123 template was added to the staring materials to control physical and chemical properties. The properties of $Co_3O_4$/$Al_2O_3$ powder with and without P123 were characterized using an X-ray diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), a Bruner-Emmertt-Teller (BET) surface analyzer, and $^{27}Al$ MAS NMR spectroscopy. Powders with and without P123 were compared in catalytic tests. The catalytic activity and selectivity were monitored by GC/MS, $^1H$, and $^{13}C$-NMR spectroscopy. The performance for the reaction of epoxidation of styrene was observed to be in the following order: [$Co_3O_4$/$Al_2O_3$ with P123-1173 K > $Co_3O_4$/$Al_2O_3$ with P123-973 K > $Co_3O_4$-973 K>$Co_3O_4$/$Al_2O_3$-973 K > $Co_3O_4$/$Al_2O_3$ with P123-1473 K > $Al_2O_3$-973 K]. The existence of ${\gamma}$-alumina and the nature of the surface morphology are related to catalytic activity.