• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.261-261
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• 2013

The smart design of nanocatalysts can improve the catalytic activity of transition metals on reducible oxide supports, such as titania, via strong metal-support interactions. In this work, we investigatedtwo-dimensional Pt nanoparticle/titania catalytic systems under the CO oxidation reaction. Arc plasma deposition (APD) and metal impregnation techniques were employed to achieve Pt nanoparticle deposition on titania supports, which were prepared by multitarget sputtering and sol-gel techniques. APD Pt nanoparticles with an average size of 2.7 nm were deposited on sputtered and sol-gel-prepared titania films to assess the role of the titania support on the catalytic activity of Pt under CO oxidation. In order to study the nature of the dispersed metallic phase and its effect on the activity of the catalytic CO oxidation reaction, Pt nanoparticles were deposited in varying surface coverages on sputtered titania films using arc plasma deposition. Our results show an enhanced activity of Pt nanoparticles when the nanoparticle/titania interfaces are exposed. APD Pt shows superior catalytic activity under CO oxidation, as compared to impregnated Pt nanoparticles, due to the catalytically active nature of the mild surface oxidation and the active Pt metal, suggesting that APD can be used for large-scale synthesis of active metal nanocatalysts.

• 공업화학
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• 제10권3호
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• pp.331-335
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• 1999

진이급속 산화물은 전기화학적 산소 발생/환원에 대한 bifunctional 촉매효과가 있어 금속-공기 이차전지와 같은 에너지 저장기술 개발에 연구대상이 되어왔다. Amorphous citrate precursor법을 이용하여 perovskite 구조를 갖는 La-Ca-Co 산화물과 pyrochlore 구조를 갖는 Pb-Ru 산화물을 제조하고, 이후 열처리법으로 표면적이 큰 전이금속 산화물 촉매분말을 제조하였다. PTFE 결합 기체확산형 전극의 충방전 실험을 통하여 전기화학적 산소발생/환원에 대한 좋은 촉매능을 가짐을 확인하였고, ${\pm}25mA/cm^2$의 전류밀도를 가하고 공기를 공급하면서 충방전 실험한 결과 100시간 이내에서 두촉매분말 모두 안정하였다. ACP법으로 제조한 perovskite 구조의 La0.6Ca0.4CoO3과 pyrochlore 구조의 Pb2Ru2O6가 이차전지용 공기전극 재료로 사용할 수 있음을 확인하였다.

• Current Photovoltaic Research
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• 제7권1호
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• pp.9-14
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• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.232.2-232.2
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• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.242-242
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• 2016

Magnetite, Fe3O4, is a ferrimagnet with a cubic inverse spinel structure and exhibits a metal-insulator, Verwey, transition at about 120 K.[1] It is predicted to possess as half-metallic nature, 100% spin polarization, and high Curie temperature (850 K). Cobalt ferrite is one of the most important members of the ferrite family, which is characterized by its high coercivity, moderate magnetization and very high magnetocrystalline anisotropy. It has been reported that the CoFe2O4/Fe3O4 bilayers represent an unusual exchange-coupled system whose properties are due to the nature of the oxide-oxide super-exchange interactions at the interface [2]. In order to evaluate the effect of interface interactions on magnetic and transport properties of ferrite and cobalt ferrite, the CoFe2O4/Fe3O4 superlattices on MgO (100) substrate have been fabricated by molecular beam epitaxy (MBE) with the wave lengths of 50, and $200{\AA}$, called $25{\AA}/25{\AA}$ and $100{\AA}/100{\AA}$, respectively. Streaky RHEED patterns in sample $25{\AA}/25{\AA}$ indicate a very smooth surface and interface between layers. HR-TEM image show the good crystalline of sample $25{\AA}/25{\AA}$. Interestingly, magnetization curves showed a strong antiferromagnetic order, which was formed at the interfaces.

• 센서학회지
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• 제16권1호
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• pp.11-16
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• 2007

CuO is an important transition metal oxide with many practical applications such as catalysts, p-type semiconductor, solar cells, magnetic storage media and cathode materials. In this contribution, nanocrystalline CuO powders were prepared by solution reduction method using copper chloride ($CuCl_{2}{\cdot}2H_{2}O$), hydrazine ($N_{2}H_{4}$) and NaOH and subsequent heat treatment. The gas sensor using nanocrystalline CuO powders showed high sensitivities to acetone and ethanol.

• 한국세라믹학회지
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• 제32권6호
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• pp.669-676
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• 1995

In this study, EO glass films were deposited by R.F. magnetron sputtering using EO glass target. The glass formation of the EO film was greatly dependent on the substrate temperature and the crystallization started at approximately 28$0^{\circ}C$. As the temperature of the substrate or the oxygen content in the sputtering gas increased, UV/VIS/NIR absorption edge moved toward longer wavelength. A wave guiding phenomenon was observed from the prism-coupler experiment and a fluorescence of 1.06${\mu}{\textrm}{m}$ originated from 4Fe3/2longrightarrow4I11/2 transition of Nd3+ was detected from the film containing Nd3+ ions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1459-1461
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• 2009

In this study, we prepared the multi-refraction film thin by ink-jet technique with sol-gel precursor. The precursors were prepared by using some transition metal alk-oxide and the tetraethylorthosilicate (TEOS) mixed separately with n-Butyl Alcohol and PVB (Poly(vinyl butyral)).The structure and morphology of the resulting films were investigated by atomic force microscope (AFM). It is shown that the shape of the pattern of the films would affect the refraction proportion.

• 마이크로전자및패키징학회지
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• 제26권1호
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• pp.1-7
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• 2019

Recently, memristor (anion-based memristor) is referred to as the fourth circuit element which resistance state can be gradually changed by the electric pulse signals that have been applied to it. And the stored information in a memristor is non-volatile and also the resistance of a memristor can vary, through intermediate states, between high and low resistance states, by tuning the voltage and current. Therefore the memristor can be applied for analogue memory and/or learning device. Usually, memristive behavior is easily observed in the most transition metal oxide system, and it is explained by electrochemical migration motion of anion with electric field, electron scattering and joule heating. This paper reports the latest trends and issues of anion-based memristor.

• Bulletin of the Korean Chemical Society
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• 제9권5호
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• pp.283-288
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• 1988

The titled properties on reduction of the perovskite $LaBO_3$ (B = Fe, Co, Ni) have been investigated by means of temperature-programmed reduction, isothermal reduction and X-ray diffraction methods. Nominal composition of $LaFeO_{3.18},\;LaCoO_{3.00}\;and\;LaNiO_{2.92}$ are determined. Reduction reaction of these mixed oxides differed according to B-site transition metal and thermal stability on reduction decreased as following order: $LaFeO_{3.18}$ > $LaCoO_{3.00}$ > $LaNiO_{2.92}$. From the results of isothermal reaction, kinetics on reduction of the perovskite has been discussed in detail.