• Journal of Magnetics
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• 제16권1호
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• pp.15-18
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• 2011

We have studied the $TiO_2$ doping effects on the flux pinning behavior of an $MgB_2$ superconductor synthesized by the in-situ solid-state reaction. From the field-cooled and zero-field-cooled temperature dependences of magnetization, the reversible-irreversible transition of $TiO_2$-doped $MgB_2$ was determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). For comparison, the similar measurements are also obtained from SiC-doped $MgB_2$. The critical current density was estimated from the width of hysteresis loops in the framework of Bean's model at different temperatures. The obtained results manifest that nano-scale $TiO_2$ inclusions served as effective pinning centers and lead to the enhanced upper critical field and critical current density. It was concluded that the grain boundary pinning mechanism was realized in a $TiO_2$-doped $MgB_2$ superconductor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권4호
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• pp.141-146
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• 2002

The mechanical and electrical properties of the pressureless sintered SiC-TiB$_2$electroconductive ceramic composites were investigated as functions of the transition metal of TiB$_2$. The result of phase analysis for the SiC-TiB$_2$ composites by XRD revealed $\alpha$-SiC(6H), TiB$_2$, and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phases. The relative density showed the lowest 84.8% for the SiC-TiB$_2$composites added with 39vol.%TiB$_2$. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 7.8 MPa.m$^{1}$2/ for composites added with 39vol.%TiB$_2$under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%TiB$_2$ composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%TiB$_2$composites was all positive temperature coefficient resistance(PCTR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.EX>.

• 대한화학회지
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• 제24권2호
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• pp.91-100
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• 1980

축방향대칭을 갖는 팔면체 $[Ti(III)A_3B_3]$형태 착물의 자기모멘트를 계산하는 식을 유도하여 distortion parameter$({\delta})$, 스핀-궤도 상호작용상수$({\zeta}')$ 및 orbital reduction factor의 실험치를 사용하여 이들 착물의 자기모멘트를 계산하였다. 축방향으로 일그러진 팔면체 $[Ti(III)A_3B_3]$형태 착물의 계산한 자기모멘트가 실험치와 비교적 일치하였다. 팔면체로부터 축방향 일그러짐이 커짐에 따라 그리고 orbital reduction factor가 감소함에 따라 계산한 자기모멘트의 값이 크게 감소하였다. 축방향대칭보다 낮은 리간드장으로 일그러진 팔면체착물의 자기모멘트를 계산하는 방법을 발전시켰으며 계산한 자기모멘트를 기초로 하여 일그러진 팔면체 $[Ti(III)A_3B_3]$형태 착물의 구조를 논의하였다.

• 한국자기학회지
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• 제15권1호
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• pp.1-6
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• 2005

높은 큐리온도를 가질 수 것으로 예측된 전이금속이 도핑된 ZnO의 전자구조와 자성을 제일원리계산방법을 이용하여 연구하였다. 본 연구에서 전이금속은 Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag 이고 도핑 수준은 25%로 두고 계산하였다. 자성연구에서 가장 적합한 방법으로 알려져 있는 Full-potential Linearized Augmented Plane Wave(FLAPW)방법을 사용하였으며 교환-상관 전위는 general gradient approximation(GGA)를 사용하였다. 도핑된 전이금속 (Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag)은 각각 0.83, 3.03, 4.03, 3.48, 2.47, 1.56, 0.43, 0.75, 0.01 ${\mu}_B$의 자기모멘트를 가지며, 전이금속에 이웃한 O 원자도 가안 띠혼성으로 측정 가능한 자기모멘트를 가질 수도 있는 것으로 계산되었다. 3d 전이금속이 도핑된 ZnO는 (CoZnO를 제외하고) 절반금속 특성을 가지는 것으로 계산되었다. 또한 4d 전이금속이 도핑된 경우는 강자성 상태가 상자성 상태에 비해 에너지차이가 크지 않을 뿐 아니라 페르미 준위에 다수 스핀과 소수 스핀 상태 모두가 페르미 준위에 위치해 있어 스핀분극 정도가 낮았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.124-125
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• 2007

The composites were fabricated $\beta$-SiC and $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at $1,650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[MPa], 54.60 [GPa] and 2.84[GPa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. The electrical resistivity showed the lowest value of 0.012[${\Omega}{\cdot}cm$] for 16[wt%] at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• 한국자기학회지
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• 제18권2호
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• pp.75-78
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• 2008

$AB_2X_4$((A, B)=Transition Metal, X=O, S, Se) 물질에서의 8면체 자리의 이온 거동과 4면체 자리 이온과의 상호작용에 대하여 많은 연구가 이루어지고 있다. 본 연구에서는 4면체 자리에 비자성 이온인 Zn 이온을 치환함에 따른 자기구조의 변화를 관측하여 8면체 자리의 자기구조를 분석하고자 하였다. Cr이온의 일부를 Fe로 치환한 $[Co_{0.9}Zn_{0.1}]_A[Cr_{1.98}{^{57}Fe_{0.02}}]_BO_4$의 닐온도($T_N$는 90K로 $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$ 비하여 감소하였다. 4.2 K에서의 초미세자기장값의 분석결과, 초미세자기장값의 작은 차이를 보이는 잘 분리된 2-set 형태로 나타났으며, $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$의 초미세자기장값은 488, 478 kOe 인데 반하여, $Co_{0.9}Zn_{0.1}Cr_{1.98}{^{57}Fe_{0.02}}O_4$의 초미세자기장값은 $B_1=486$, $B_2=468$ kOe으로 나타났다. Zn 이온의 치환에 따라서 초미세자기장값의 변화를 알 수 있었다. 이러한 결과로 인하여, Zn 이온이 x=0.1 치환된 물질의 경우, 스핀재정렬온도($T_S$)가 18K으로 감소함을 알 수 있다.

• 한국수소및신에너지학회논문집
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• 제8권3호
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• pp.101-109
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• 1997

We propose a new concept of hydrogen absorbing alloy, "Laves phase related BCC solid solution". It was firstly found among the phases tormed in multicomponent nominal $AB_2$ alloys which consisted of Zr and Ti for the A metal site and 5A, 6A and 7A transition metals for the B metal sites. In these alloys a BCC solid solution often coexisted with a Laves phase. It showed stability of hydrides and reaction kinetics almost identical to intermetallics such as Laves phase alloys. We prepared an almost pure "Laves phase related BCC solid solution" and found that it had a large hydrogen capacity (more than 2 mass%) and fast hydrogen absorption and desorption kinetics at ambient temperature and pressure. This new hydrogen absorbing alloy may open a new era of hydrogen related application such as hydrogen vehicles.

• Journal of Welding and Joining
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• 제18권2호
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• pp.49-56
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• 2000

Recently developed Austenite stainless steel, 309L was used to overlay on 3Cr-1Mo-V-Ti-B steels, using Electroslag welding process, which wide electrodes were adopted. Transition region in welding interlayer relating to disbonding crack was investigated. Also, the effect of welding condition on the width of transition region and coarsening grains of the austenite were studied. 1) With increasing welding speed the width of martensite at transient region was increased, but the amount of delta ferrite in weld metal was reduced, being fine grained. 2) The form of martensite at the transition region was occurred by reversible transformation during cooling since the interdiffusion of Cr and Ni from weld metal and Fe and C from base metals at the transition region, causes to lowering the concentration of Cr and Ni at the transition region, leading to increasing Ms point. 3) With increasing welding speed, the grain of austenite formed at the welding interface was finer. With increasing welding current under the same welding speed, the grain size of the austenite was finer. At high current, original grain size of the austenite is coarse, but the austenite has fine grains because the austenite was transformed to martensite during cooling. 4) In the case of high welding speed, the width of martensite at the welding interface was increased, but the grain size of austenite at the welding interface was finer. This indicates that the inhibition of disbonding crack may be achieved through dispersening fine carbides in the gain boundary.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.