• Title/Summary/Keyword: Transient Overvoltage Blocking Device(TOBD)

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A Study on the Development of a Transient Voltage Blocking Device for Info-communication Facilities (정보통신기기용 과도전압 차단장치의 개발에 관한 연구)

  • 한주순
    • Journal of Advanced Marine Engineering and Technology
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    • v.23 no.2
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    • pp.159-167
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    • 1999
  • This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

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Design and Fabrication of a High Speed Blocking Device of Transient Overvoltages for info-communication Facilities (정보통신기기용 과도이상전압 고속도차단장치의 설계 및 제작)

  • Gil, Gyeong-Seok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.1
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    • pp.51-56
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    • 1999
  • This paper presents a new transient overvoltage blocking device (TOBD) for info-communication facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, thehybrid type TOBD, which consists of a gas tube, avalanche diodes and junction typefield effect transistors (JFETs), was designed and fabricated. The TOBD differs from the conventional protection devices in configuration, and JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche dilde with low energy capacity are protected fromthe high current, and the TOBD has a very small input capacitance. From the performance test using combination surge generator, which can produce $1.2/50\mus\;4.2kV_{max}\; 8/20\mus\; 2.1kA_{max}$, it is confirmed that proposed TOBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

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