• 제목/요약/키워드: Trans-conductance($g_m$)

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이미지 센서 적용을 위한 In0.7Ga0.3As QW HEMT 소자의 extrinsic trans-conductance에 영향을 미치는 성분들의 포괄적 연구 (Comprehensive study of components affecting extrinsic transconductance in In0.7Ga0.3As quantum-well high-electron-mobility transistors for image sensor applications)

  • 윤승원;김대현
    • 센서학회지
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    • 제30권6호
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    • pp.441-445
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    • 2021
  • The components affecting the extrinsic transconductance (gm_ext) in In0.7Ga0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (gm_int) and the gm_ext of the devices. Two types of In0.7Ga0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting gm_int, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (RS and RD), apparent mobility (𝜇n_app), and saturation velocity (𝜈sat).

새롭게 수정된 Curtice 모델을 이용한 GaAs pHEMT 대신호 통합모델 구축 (Large Signal Unified Model for GaAs pHEMT using Modified Curtice Model)

  • 박덕종;염경환;장동필;이재현
    • 한국전자파학회논문지
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    • 제12권4호
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    • pp.551-561
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    • 2001
  • 본 연구에서는 GEC-Marconi 사의 H40 GaAs pHEMT 소자에 대해서 새롭게 수정한 Curtice 모델을 사용하여 대신호 통합모델을 구축하였다. 통합모델에는 DC 특성과 biss에 따른 소신호 및 잡음 특성이 모두 포함되어 있으며, 특히 수정되 Curtice 모델을 사용함으로써 gate-source 간의 전압이 증가함에 따라 나타나는 pHEMT 의 transconductance(이하 $g_{m}$) 특성을 매우 간단하면서도 물리적으로 설명할 수 있게 하였다. 또한 통합모델 내부에는 RF-choke를 사용함으로써 $g_{m}$, $R_{ds}$ 성분의 DC 상태와 AC 상태에서의 차이를 설명하게 하였다. 통합모델을 HP사의 simulation tool 인 MDS(Microwave Design System)의 SDD(Symbolically Defined Device)를 이용하여 구현한 후, 실제의 data와 비교한 결과 DC, small signal, 그리고 noise 에 대한 특성에 H40 pHEMT 와 대부분 일치함을 보았으며, 선형과 다양한 harmonic balance simulation 의 수렴성 및 정확성을 확인함으로써 본 모델을 이용한 경우 저잡음 증폭기, 발진기, 그리고 혼합기 등의 여러 부품설계를 할 수 있음을 보였다.

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Mechanisms of Selective Antimicrobial Activity of Gaegurin 4

  • Kim, Hee-Jeong;Lee, Byeong-Jae;Lee, Mun-Han;Hong, Seong-Geun;Ryu, Pan-Dong
    • The Korean Journal of Physiology and Pharmacology
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    • 제13권1호
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    • pp.39-47
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    • 2009
  • Gaegurin 4(GGN 4), an antimicrobial peptide isolated from a Korean frog, is five times more potent against Gram-positive than Gram-negative bacteria, but has little hemolytic activity. To understand the mechanism of such cell selectivity, we examined GGN4-induced $K^+$ efflux from target cells, and membrane conductances in planar lipid bilayers. The $K^+$ efflux from Gram-positive M. luteus(2.5 ${\mu}g/ml$) was faster and larger than that from Gram-negative E. coli(75 ${\mu}g/ml$), while that from RBC was negligible even at higher concentration(100 ${\mu}g/ml$). GGN4 induced larger conductances in the planar bilayers which were formed with lipids extracted from Gram-positive B. subtilis than in those from E. coli(p<0.01), however, the effects of GGN4 were not selective in the bilayers formed with lipids from E. coli and red blood cells. Addition of an acidic phospholipid, phosphatidylserine to planar bilayers increased the GGN4-induced membrane conductance(p<0.05), but addition of phosphatidylcholine or cholesterol reduced it(p<0.05). Transmission electron microscopy revealed that GGN4 induced pore-like damages in M. luteus and dis-layering damages on the outer wall of E. coli. Taken together, the present results indicate that the selectivity of GGN4 toward Gram-positive over Gram-negative bacteria is due to negative surface charges, and interaction of GGN4 with outer walls. The selectivity toward bacteria over RBC is due to the presence of phosphatidylcholine and cholesterol, and the trans-bilayer lipid asymmetry in RBC. The results suggest that design of selective antimicrobial peptides should be based on the composition and topology of membrane lipids in the target cells.