• 전기학회논문지
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• 제61권9호
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• pp.1306-1313
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• 2012

This paper reports the contamination performance of two distribution arresters (new and used ones) tested under three different contaminant conditions - clean fog, ESDD (equivalent salt deposit density) level (A, B, C, and D), and kaolin contamination conditions, and their leakage current, total leakage current, and component of the resistive leakage current were measured in order to diagnose arrester deterioration. The 3rd harmonics was larger than 5th and 7th ones for the arrester under the clean fog, and as the ESDD contamination level was applied, 5th one became relatively larger than 3rd one. Therefore, these results indicated that the resistive leakage current could be used for the diagnosis of the arresters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.140-143
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• 2000

The primary function of ZnO lightning arrester is to protect transmission and distribution equipment from overvoltages and to absorb electrical energy resulting from lightning or switching surges and form temporary overvoltage. However, ZnO lightning arrester are known to exhibit an increases in resistive current with time, the rate of increase being exacerbated with increasing applied voltage and ambient temperature. So, it is important to the leakage current measurement of ZnO lightning arrester. In addition, since the resistive leakage current caused by deterioration of ZnO lightning arrester mainly caused an increase of the third harmonic component, thereby it is possible the arrester degradation diagnosis by measuring the third harmonic component in the total leakage current. The leakage current and third harmonic component are measured and used to investigate the degradation diagnosis of ZnO element of arrester. Also the SEM photography is used to investigate the change of crystal structure of ZnO element with degradation.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2005년도 춘계학술대회 논문집
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• pp.819-824
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• 2005

This paper describes the measurement result of leakage current flowing arresters connected in feeder lines to propose an optimal management method. Twenty seven arresters set in seven areas were analyzed on a regular basis for 4 months. The results showed that the RMS and the peak value of the total leakage currents for soundness arresters were a range of $200uA{\sim}00uA$. respectively. During the period of measurement, the magnitude of the leakage current didn't show conspicious changes and there were impossible places to analyze arrester's status due to including high THD rate in a feeder line, From the study, leakage current measurement has to be performed at a condition without running an electric train in the line, and the allowable RMS value of soundness arrester is bellow 600uA.

• 한국전자통신학회논문지
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• 제11권6호
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• pp.605-610
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• 2016

누전차단기는 전기재해로 인한 사고를 미연에 방지하기 위해 사용되는 유일한 방법이다. 그러나 기존의 누전차단기는 15mA~30mA의 차단범위에서 합성 누설전류를 검출하여 동작하기 때문에 저항성 누설전류에 의해 발생하는 화재 및 인체감전으로 인한 인명 및 재산피해를 미연에 방지하는데 한계가 있다. 또한 용량성 누설전류에 의한 오동작으로 인한 생산성 감소 및 신뢰성 등의 문제를 가지고 있다. 본 연구에서는 기존 누전차단기의 문제를 해결하기 위해 위상차를 측정을 통하여 유효성분(저항성) 누설전류를 감지할 수 있는 알고리즘을 개발하였고, 감지된 누설전류를 기술표준규격에서 규정하는 0.03초 이내에 차단을 할 수 있도록 16 bit 신호처리 프로세서인 MSP430 프로세서를 사용하여 유효성분 누설전류 감지 알고리즘을 구현하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.113-116
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• 1996

The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1906-1908
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• 2002

In general, ZnO lighting arrester are known to exhibit an increases in resistive current with time, the rate of increase being exacerbated with increasing applied voltage. In addition, since the resistive leakage current caused by deterioration of ZnO lighting arrester mainly caused an increase of the third harmonic component, thereby it is possible the arrester degradation diagnosis by measuring the third harmonic component in the total leakage current. So, in this paper, we presents a leakage current measuring and analysis system of 18[kV] ZnO lighting arrester.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1572-1573
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• 2006

This paper presents electrical properties of Zinc Oxide(ZnO) surge arrester blocks under the power frequency AC voltages and various temperatures. The leakage current, $I_{R}-V$ curios and power dissipation for the fine and aged ZnO surge arrester blocks were measured as a function of the temperatures and applied voltages. When the temperature is increased from $50\;[^{\circ}C]$ to $150\;[^{\circ}C]$, the total leakage current significantly increased at the sane applied voltage level. Also, the resistive leakage currents and power dissipation were increased with increasing temperature. The leakage current and power dissipation of the aged ZnO arrester blocks were higher than the fine ZnO arrester blocks.

• 한국산업안전학회:학술대회논문집
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• 한국안전학회 1998년도 추계 학술논문발표회 논문집
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• pp.335-340
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• 1998

This paper presents a study on the electrical fire hazards of leakage current in a distribution circuit simulating a domestic circuit for low voltage. In this simulated circuits, total charges and energy of leakage current are calculated by a theoretical approach and compared with the results obtained from experiments, The approach and results become a cornerstone for studying and analyzing causes of electrical fires.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.344-345
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• 2012

The Gate-Induced-Drain-Leakage (GIDL) current with channel doping and width dependence are characterized. The GIDL currents are found to increase in MOSFETs with higher channel doping levels and the observed GIDL current is generated by the band-to-band-tunneling (BTBT) of electron through the reverse-biased channel-to-drain p-n junction. A BTBT model is used to fit the measured GIDL currents under different channel-doping levels. Good agreement is obtained between the modeled results and experimental data. The increase of the GIDL current at narrower widths in mainly caused by the stronger gate field at the edge of the shallow trench isolation (STI). As channel width decreases, a larger portion of the GIDL current is generated at the channel-isolation edge. Therefore, the stronger gate field at the channel-isolation edge causes the total unit-width GIDL current to increases for narrow-width devices.

• 한국철도학회논문집
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• 제7권4호
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• pp.307-311
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• 2004

Arresters are the best protective device on electrical power systems against transient overvoltages generated by lightning and/or switching operation. Nonetheless, arresters are deteriorated by absorption of moisture in the environments of its use, repetition in the protective operation to overvoltages, and some defects at manufacturing. It is therefore important to estimate the electrical characteristic changes of ZnO blocks. In this paper, an accelerated ageing test by a standard lightning impulse current was carried out to extract parameters needed for arrester diagnosis, and leakage current components were measured. Total energy applied to the ZnO blocks at each time is about 1,050[J] in 8/20[${\mu}\textrm{s}$] impulse current. From the experimental results, we proposed electrical parameters and leakage current level to diagnose arrester soundness.