• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.6-9
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• 2019

Developing a gate-tunable, scalable, and topologically-protectable supercurrent qubit and integrating it into a quantum circuit are crucial for applications in the fields of quantum information technology and topological phenomena. Here we propose that the nano-hybrid supercurrent transistors, a superconducting quantum analogue of a transistor, made of topological insulator nanowire would be a promising platform for unprecedented control of both the supercurrent magnitude and the current-phase relation by applying a voltage on a gate electrode. We believe that our experimental design will help probing Majorana state in topological insulator nanowire and establishing a solid-state platform for topological supercurrent qubit.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.516-520
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• 2014

Fractional quantum Hall Effect (FQSH) is one of most fundamental issues in condensed matter physics, and the Topological insulator becomes its prominent applications. This article reviews the general frameworks of these development and the physical properties. FQSH states and topological insulators are supposed to be topologically invariant under the minor change of geometrical shape or internal impurities. The phase transitions involved in this phenomena are known not to be explained in terms of symmetry breaking or Landau-Ginsburg theory. The new type of phase transitions related to topological invariants has acquired new name - topological phase transition. The intuitive concepts and the other area having same type of phase transitions are discussed.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.135-139
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• 2016

I propose a vector passive harmonic mode-locked fiber laser based on topological insulator Bi2Se3 interacting with a fiber taper with a diameter of 7 μm. The particles of topological insulator are deposited uniformly onto the fiber taper with light pressure effect. By incorporating the fabricated saturable absorber into an Er-doped fiber laser cavity, stable mode-locked fiber is obtained. Due to the intense evanescent field of the fiber taper, strong confinement of light enhances the nonlinearity of the laser cavity, and passive harmonic mode-locking is performed. I observe a maximum harmonic mode-locking of 356th, corresponding to a frequency of 3.57 GHz. The pulse duration is 824 fs, and the full width at half maximum of the spectrum is about 8.2 nm. The polarization dependent loss of the saturable absorber is ~ 2.5 dB in the wavelength range of the C band. As the cavity contains no other polarization dependent device, the mode-locked laser is functioning in the vector state. The harmonic order vs pump power is investigated. To the best of our knowledge, this report is the highest frequency mode-locked fiber laser based on Bi2Se3. Experimental results indicate that the topological insulator Bi2Se3 functioning with a thin fiber taper is effective for vector harmonic mode-locking.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.272.1-272.1
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• 2016

In a three-dimensional topological insulator Bi2Se3, a stress control for band gap manipulation was predicted but no systematic investigation has been performed yet due to the requirement of large external stress. We report herein on the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. Using small angle X-ray scattering and Raman spectroscopy, the changes of d-spacings in the crystal structure and phonon vibration shifts resulted from stress are clearly observed when the film thickness is below ten quintuple layers. From the UV photoemission/inverse photoemission spectroscopy (UPS/IPES) results and ab initio calculations, significant changes of the Fermi level and band gap were observed. The deformed band structure also exhibits a Van Hove singularity at specific energies in the UV absorption experiment and ab initio calculations. Our results, including the synthesis of a strained ultrathin topological insulator, suggest a new direction for electronic and spintronic applications for the future.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.13-18
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• 2019

Superconducting junctions of topological insulator (TI) are expected to host Majorana bound state, which is essential for developing topological quantum information devices. In this study, we fabricated Josephson junctions (JJs) made of Sb-doped Bi2Se3 TI nanoribbon and PbIn superconducting electrodes. In the normal state, the axial magnetoresistance data exhibit periodic oscillations, so-called Aharonov-Bohm oscillations, due to a metallic surface state of TI nanoribbon. At low temperature of 1.5 K, the TI JJ reveals the superconducting proximity effects, such as the critical current and multiple Andreev reflections. Under the application of microwave, integer Shapiro steps are observed with satisfying the ac Josephson relation. Our observations indicate that highly-transparent superconducting contacts are formed at the interface between TI nanoribbon and conventional superconductor, which would be useful to explore Majorana bound state in TI.

• Electronics and Telecommunications Trends
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• v.38 no.1
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• pp.17-25
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• 2023

Topological insulators (TIs) emerge as one of the most fascinating and amazing material in physics and electronics. TIs intrinsically possess both gapless conducting surface and insulating internal properties, instead of being only one property such as conducting, semiconducting, and insulating. The conducting surface state of TIs is the consequence of band inversion induced by strong spin-orbit coupling. Combined with broken inversion symmetry, the surface electronic band structure consists of spin helical Dirac cone, which allows spin of carriers governed by the direction of its momentum, and prohibits backscattering of the carriers. It is called by topological surface states (TSS). In this paper, we investigated the TIs materials and their unique properties and denoted the fabrication method of TIs such as deposition and exfoliation techniques. Since it is hard to observe the TSS, we introduced several specialized analysis tools such as angle-resolved photoemission spectroscopy, spin-momentum locking, and weak antilocalization. Finally, we reviewed the various fields to utilize the unique properties of TIs and summarized research trends of their applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.59-59
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• 2011

We will report atomically sharp epitaxial growth of $Bi_2Se_3$ three-dimensional topological insulator films on Si(111) substrate with molecular beam epitaxy (MBE). It was achieved by employing two step growth temperatures to prevent any formation of second phase, like as $SiSe_2$ clusters, between $Bi_2Se_3$ and Si substrate at the early stage of growth. The growth rate was determined completely by Bi flux and the Bi:Se flux ratio was kept ~1:15. The second-phase-free atomically sharp interface was verified by RHEED, TEM and XRD. Based on the RHEED analysis, the lattice constant of $Bi_2Se_3$ relaxed to its bulk value during the first quintuple layer implying the absence of strain from the substrate. Single-crystalline XRD peaks of $Bi_2Se_3$ were observed in films as thin as 4 QL. TEM shows full epitaxial structure of $Bi_2Se_3$ film down to the first quintuple layer without any second phases. This growth method was used to grow high quality epitaxial $Bi_2Se_3$ films from 3 QL to 3600 QL. The magneto-transport properties of these thin films show a robust 2D surface state which is thickness independent.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.128.1-128.1
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• 2013

We investigated the correlation between electrical transport and mechanical stress in $Bi_2Te_2Se$ by using a conductive probe atomic force microscopy in an ultra-high vacuum environment. Uniform distribution of measured friction and current were observed over a single quintuple layer terrace, which is an indication of the uniform chemical composition of the surface. By measuring the charge transport of $Bi_2Te_2Se$ surface as a function of the load applied by a tip to the sample, we found that the current density varies with applied load. The variation of current density was explained in light of the combined effect of the changes in the in-plane conductance and spin-orbit coupling that were theoretically predicted. We suppose that the local density of states is modified by tip-induced strain, but topological phase still remains. We exposed a clean topological insulator surface by tip-induced indentation. The surface conductance on the indented $Bi_2Te_2Se$ surface was studied, and the role of surface oxide on the surface conductance is discussed.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.52-52
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• 2015

• Proceedings of the Korean Magnestics Society Conference
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• 2017.05a
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• pp.228-228
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• 2017