• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.698-703
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• 2015

In this study, we fabricated the dual gate (DG) ion-sensitive field-effect-transistor (ISFET) with flexible polyimide (PI) extended gate (EG). The DG ISFETs significantly enhanced the sensitivity of pH in electrolytes from 60 mV/pH to 1152.17 mV/pH and effectively improved the drift and hysteresis phenomenon. This is attributed to the capacitive coupling effect between top gate and bottom gate insulators of the channel in silicon-on-transistor (SOI) metal-oxide-semiconductor (MOS) FETs. Accordingly, it is expected that the PI-EG based DG-ISFETs is promising technology for high-performance flexible biosensor applications.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.257-260
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• 2016

In this paper, two configurations (T-type and Y-type) of dual band Wilkinson Power Divider based upon Hilbert curves are presented. Formerly, the concept of Hilbert Curves was implemented in only designing microstrip antennas. In power dividers, this is the very first attempt of incorporating them for size reduction. In addition to this, an effect of inculcation of high-dielectric constant layer (Hafnium-oxide, HfO₂, ε_r= 25) between a substrate and top metallization in both configurations was investigated. The proposed configurations are designed on a high resistive silicon substrate (HRS) for L and S bands with resonating frequencies of 1.575 and 3.4 GHz. Both configurations have return loss that is better than 20 dB and an insertion loss of around 6 dB; isolation better than 30 dB was achieved for both models.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.849-852
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• 2002

Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.318-319
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• 2006

기존에 사용되고 있는 ITO(Indium-Tin-Oxide)의 저항보다 낮은 저항을 가지는 AZO(ZnO-Ag-ZnO) 전극을 Top emission 방식의 OLED(organic light emitting diode)에 적용하여 발광 소자를 제작하였다. AZO박막은 기존의 ITO박막이 수십 ${\Omega}$을 나타내던 것과 비교하여 $8{\Omega}$으로 매우 낮은 저항을 나타내었다. 투과율은 84%로 기존의 ITO박막과 유사한 성능을 나타내었다.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2369-2376
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• 2007

N2O has been found from experimental and theoretical considerations to bind on-top to the Pd(110) surface in a tilted end-on fashion via its terminal N atom. We use a frontier orbital description of the bonding interactions in the Pd-N2O system to obtain molecular insight into the catalytic mechanism of the activation of N2O by the Pd(110) surface giving rise to the formation of N2 and O on the surface. For the tilted end-on N2O binding mode, the LUMO 3π of N2O has good overlap with the Pd dσ and dπ orbitals which can serve as the electron donors. The donor-acceptor orbital overlap is favorable for electron transfer from Pd to N2O and is expected to dominate the surface reaction pathway of N2O decomposition.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1311-1314
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• 2008

We have developed new electrical dopants of rhenium oxide ($ReO_3$) and cupper iodide (CuI) as p-dopants and rubidium carbonate ($Rb_2CO_3$) as an n-dopant, respectively. $ReO_3$ has advantage of low temperature evaporation (about $300^{\circ}C$) with enhanced device stability. Various kinds of high performance organic light emitting diodes have been realized, including bottom emission, tandem, and top-emission OLEDs.

• Journal of IKEEE
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• v.22 no.3
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• pp.565-569
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• 2018

For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

• KSTLE International Journal
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• v.5 no.1
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• pp.32-35
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• 2004

The purpose of this study is to investigate the effects of the structure and mechanical properties of laser-processed pads on their polishing behavior such as their removal rate and WIWNU (within wafer non-uniformity) during the chemical mechanical planarization (CMP) process. The holes on the pad acted as the reservoir of slurry particles and enhanced the removal rate. Without grooves, no effective removal of wafers was possible. When the length of the circular-type grooves was increased, higher removal rates and lower wafer non-uniformity were measured. The removal rate and non-uniformity linearly increased as the elastic modulus of the top pad increased. Higher removal rates and lower non-uniformity were measured as the hardness of the pad increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.318-318
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• 2011

Etching of an ultrathin aluminum oxide film on NiAl(110) substrate by methanol is studied by home-built scanning tunneling microscopy at room-temperature. We deposited liquid methanol on thin alumina film by using a high speed solenoid valve suitable for deposition of thermally unstable molecules. It is found that only the reflection domain boundary between two domains was preferentially etched by methanol. Since the reflection domain boundary has many oxygen vacancies and irregular structures, judging from the fact, we assume that oxygen vacancies cause the chemically reactive phenomena of methanol in reflection domain boundary on an alumina film. The reactivity of the reflection domain boundary is attributed to the oxygen vacancies due to irregular structures. Similar reactivity is found on the oxygen deficient alumina produced on top of the intact alumina.

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.21-26
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• 2018

The $Cu_2(btc)_3$ metal-organic frameworks (MOF) coated anodic aluminum oxide (AAO) membrane was successfully prepared by layer-by-layer technique using hand spray method. It was confirmed that the $Cu_2(btc)_3$ layer, which has the pore sized in 2-3 nm, on surface of AAO exhibited the polycrystalline thin film structure by XRD analysis. More than 100 repetitive spray cycles were required to obtain more robust and thick MOFs on AAO and it was possible to uniformly coat both the top and bottom surfaces of the AAO. It should be noted that the MOFs also could be coated on surface of pores resulting in reduce the size of pore from 52 nm to 32 nm.