• Journal of Conservation Science
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• v.36 no.2
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• pp.123-142
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• 2020

We attempted an experimental study of lost-wax casting to reconstruct the Gilt-bronze pensive Bodhisattva; The main object we aimed to reconstruct was the Korean national treasure No.83, Gilt-bronze pensive Bodhisattva(Maitreya); thus, we scientifically analyzed and measured the alloy ratio and casting method. Initially, the alloy ratio we used during the preliminary experiment was Cu:Sn:Pb = 95.5:4.0:0.5; we then increased tin and lead by 2.5% to consider vaporization during the main experiment. After applying lost-wax casting, we realized that 30% rosin contributed to proper hardness after the wax hardness experiment. The microstructure revealed normal casting character(α-Cu, δ), and the results of the chemical analysis are identical to those of previous studies. The analysis of the mold suggests the presence of quartz powder for structural stability and fire-resistance along with other organic materials whose contribution is still unknown. We expect that our research will serve to provide basic data for advanced studies in the future.

• Journal of Surface Science and Engineering
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• v.50 no.5
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• pp.411-420
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• 2017

In this paper, two methods of making the Pd-added $SnO_2$ ($Pd-SnO_2$) powder with pure tetragonal phase by the hydrazine method were suggested and compared in terms of crystal structure, surface morphology, and alcohol gas response. One of the addition methods is to use $PdCl_2$ as a Pd source, the other is to use Pd-based organic with oleylamine (OAM). When Pd concentration was increased from 0 to 5 wt%, the average grain size of $Pd-SnO_2$ made with Pd-OAM were decreased from 32 to 12 nm. In the case of using with $PdCl_2$, grain size of the $PdCl_2$ fell to less than 10 nm. However, agglomerated and extruded surface morphology was observed for the films with Pd addition over 4 wt%. The crack-free $Pd-SnO_2$ thick films were able to successfully fill the $30{\mu}m$ gap of patterned Pt electrodes by optimized ink dropping method. Also, the 2 wt% $Pd-SnO_2$ thick film made with PdCl2 showed gas responses ($R_{air}/R_{gas}$) of 3.7, 5.7 and 9.0 at alcohol concentrations of 10, 50 and 100 ppm, respectively. On the other hand, the prepared 3 wt% $Pd-SnO_2$ thick film with Pd-OAM exhibited very excellent responses of 3.4, 6.8 and 12.2 at the equivalent measurement conditions, respectively. The 3 wt% $Pd-SnO_2$ thick film with Pd-OAM has a specific surface area of $31.39m^2/g$.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1078-1086
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• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.

• Journal of the Korean Society of Radiology
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• v.3 no.2
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• pp.27-31
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• 2009

Now a days, the Medical X-ray equipments has become digitalized from analog type such as film, cassette to CR, DR. And many scientists are still researching and developing the Medical X-ray equipment. In this study, we used the Bismuth tri-iodide to conversion material for digital X-ray equipments and we couldn't get the satisfying result than previous study, but it opened new possibility to cover the disadvantage of a-Se is high voltage aplly and difficultness of make. In this paper, we use $BiI_3$ powder(99.99%) as x-ray conversion material and make films that have thickness of 200um and the film size is $3cm{\times}3cm$. Also, we deposited an ITO(Indium Tin Oxide) electrode as top electrode and bottom electrode using a Magnetron Sputtering System. To evaluate a characteristics of the produced films, an electrical and structural properties are performed. Through a SEM analysis, we confirmed a surface and component part. And to analyze the electrical properties, darkcurrent, sensitivity and SNR(Signal to Noise Ratio) are measured. Darkcurrent is $1.6nA/cm^2$ and sensitivity is $0.629nC/cm^2$ and this study shows that the electrical properties of x-ray conversion material that made by screen printing method are similar to PVD method or better than that. This results suggest that $BiI_3$ is suitable for a replacement of a-Se because of the reduced manufacture processing and improved yield.

• Journal of the Korean Electrochemical Society
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• v.22 no.1
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• pp.36-42
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• 2019

A macroporous Sn thick film as a high capacity negative electrode for a lithium ion secondary battery was prepared by using a chemical etching method using nitric acid for a Sn film having a thickness of $52{\mu}m$. The porous Sn thick film greatly reduced the over-voltage for the alloying reaction with lithium by the increased reaction area. At the same time. The porous structure of active Sn film plays a part in the buffer and reduces the damage by the volume change during cycles. Since the porous Sn thick film electrode does not require the use of the binder and the conductive carbon black, it has substantially larger energy density. As the concentration of nitric acid in etching solution increased, the degree of the etching increased. The etching of the Sn film effectively proceeded with nitric acid of 3 M concentration or more. The porous Sn film could not be recovered because the most of Sn was eluted within 60 seconds by the rapid etching rate in the 5 M nitric acid. In the case of etching with 4 M nitric acid for 60 seconds, the appropriate porous Sn film was formed with 48.9% of weight loss and 40.3% of thickness change during chemical acid etching process. As the degree of etching of Sn film increased, the electrochemical activity and the reversible capacity for the lithium storage of the Sn film electrode were increased. The highest reversible specific capacity of 650 mAh/g was achieved at the etching condition with 4 M nitric acid. The porous Sn film electrode showed better cycle performance than the conventional electrode using a Sn powder.