• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.28-32
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• 2006

Diarylethene in photochromic materials was doped in organic-inorganic hybrid low-melting glasses were synthesized through a nonaqueous acid-base reaction process, which consists of network units including a small number of bridging oxides. The organic phase is a dichlorodimethylsilane while the inorganic phase is a tin(II) chloride. Diarylethene was incorporated into the glasses without any degradation of its functionality. The open form of diarylenthene, which is converted from the opening one upon UV-irradiation, is change to the closed form visible light-irradiation. The rate constant of the photochemical reaction is $31.78\times10^{-3}s^{-1}$ with 400 W UV lamp irradiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1144-1148
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• 2006

We have investigated liquid crystal (LC) aligning capabilities and electro-optical (EO) characteristics of transparent electrodes as Al-doped ZnO (AZO) substituting indium tin oxide (ITO). The experiment results show that a uniform vertical LC alignment on AZO electrodes based on a rubbed polyimide (PI) surface were achieved. A high pretilt angle of about $88^{\circ}$ was obtained. EO performances of the VA cell on rubbed PI surfaces with AZO electrodes are almost the same as that of the VA cell with ITO electrodes. These results appeared that AZO electrodes as transparent electrodes of LCDs could substitute ITO electrodes.

• Economic and Environmental Geology
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• v.18 no.1
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• pp.11-22
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• 1985

The Daehwa and Donsan tungsten-molybdenum deposits are composed of numerous fissure-filling veins developed in Precambrian gneiss and Cretaceous granite and quartz porphyry. K-Ar age of biotite in granite and that of muscovite in ore veins are $105{\pm}5\;Ma$ and 88.2~88.6 Ma respectively. Occurrence of ore deposits shows that relevant igneous rock is possibly quartz porphyry rather than above mentioned granite in temporal view point. Vein structure and mineralogy suggest that ore veins were formed by continuous vein filling, not by repeated mineralization. Three distinct depositional stages with decreasing age can be devided on the basis of mineral paragenesis and fluid inclusion studies: Stage I, deposition of oxides and silicates; stage II, deposition of base-metal sulfides and sulfosalts with carbonates; stage III, deposition of barren calcite and fluorite. Tungsten, molybdenum and tin mineralization occurred in stage I.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.383-384
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• 2008

$SnO_2$ oxides are considerable interest for the development of transparent electrode, thin film resistor and gas sensors. Electrospinning is a class of nanofiber forming processes by which electrostatic forces are employed to control the production of nanofibers. In this study, antimony doped tin oxide thin films were prepared by electrospinning process. Effects of ATO doping concentration and applied voltage on electrical and light transmission properties were investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.115-117
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• 2009

Interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl are determined. After $O_2$ plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the $O_2$ plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.360-360
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• 2012

Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.114-121
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• 1997

The transparent conductiong thin films of tin oxides were prepared on pyrex glass substrates by the pulse laser deposition. In the atmospheres of vacuum, O2, and $Sn(CH_3)_4$ a polycrystalline $SnO_2$ target was ablated by Nd-YAG laser beam to deposit thin films on the substrates at room temperature, and as-deposited films were subsequently heat-treated in the air for 2 h at 230, 420 and $610^{\circ}C$, respectively. The characteristics of the thin films were examined by UV-VIS-NIR spectrometry and X-ray diffractometry, and the electrical properties were measured by four-point probe method along with film thickness monitored by the stylus method. It was observed that in the presence of $Sn(CH_3)_4$, $SnO_2$ phases were grown even at room temperature. This suggests that the microplasma producted during the laser ablation plays an important role in the dissociaation of precursor molecules.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.233-242
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• 2023

In recent years, energy-management studies in buildings have proven useful for energy savings. Typically, during heating and cooling, the energy from a given building is lost through its windows. Generally, to block the entry of ultraviolet (UV) and infrared (IR) rays, thin films of deposited metals or metal oxides are used, and the blocking of UV and IR rays by these thin films depends on the materials deposited on them. Therefore, by controlling the thicknesses and densities of the thin films, improving the transmittance of visible light and the blocking of heat rays such as UV and IR may be possible. Such improvements can be realized not only by changing the two-dimensional thin films but also by altering the zero-dimensional (0-D) nanostructures deposited on the films. In this study, 0-D nanoparticles were synthesized using a sol -gel procedure. The synthesized nanoparticles were deposited as deep coatings on polymer and glass substrates. Through spectral analysis in the UV-visible (vis) region, thin-film layers of deposited zinc oxide nanoparticles blocked >95 % of UV rays. For high transmittance in the visible-light region and low transmittance in the IR and UV regions, hybrid multiple layers of silica nanoparticles, zinc oxide particles, and fluorine-doped tin oxide nanoparticles were formed on glass and polymer substrates. Spectrophotometry in the UV-vis-near-IR regions revealed that the substrates prevented heat loss well. The glass and polymer substrates achieved transmittance values of 80 % in the visible-light region, 50 % to 60 % in the IR region, and 90 % in the UV region.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.191-196
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• 2012

In this study, tin phosphate glass system($SnO_2-(1-x)P_2O_5-xB_2O_3$) that occur during the melting of the metal oxide inhibition of the oxidation reaction, and to reduce oxides of high melting temperature in the following three methods were melting. The first is the general way in the atmosphere, and the second by injecting $N_2$ gas under a neutral atmosphere, and finally in the air were melted by the addition of a reducing agent Melt in the atmosphere when the oxidation of the metal oxide is inhibited by low temperatures were melting. In addition, the deposition of crystals within glassy or inhibit devitrification phenomenon is also improved over 80% transmittance. This phenomenon, when the melting of glass, many of $Sn^{4+}$ ions are reduced to the $Sn^{2+}$ was forming oxides SnO, because it acts as a modifier oxide.