• Title/Summary/Keyword: Tin

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The Fabrication of Tin Oxide Films by Atomic Layer Deposition using Tetrakis(Ethylmethylamino) Tin Precursor

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.6
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    • pp.200-202
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    • 2009
  • Tin oxide thin films were prepared by atomic layer deposition using a tetrakis(ethylmethylamino) tin precursor without any seed layer. The average growth rate of tin oxide film is about 1.2 A/cycle from $50{^{\circ}C}$ to $150{^{\circ}C}$. The rate decreases rapidly at a substrate temperature of $200{^{\circ}C}$. ALD-grown tin oxide thin film was characterized with the use of XRD, AFM and XPS. Due to a thermal annealing effect, the surface roughness and the tin amount in the film composition are slightly increased.

Study on the Recovery of Tin Oxide and Metallurgical Tin from the Waste Steel Ball for Barrel Plating (바렐도금용 폐Steel Ball로부터 산화주석 및 금속주석 회수에 관한 연구)

  • Kim, Dae Weon;Jang, Seong Tae
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.505-510
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    • 2012
  • A study of the recovery of tin and nickel from steel ball scraps for barrel plating was carried out through a physical treatment, a leaching treatment, hydrogen reduction and an electrolysis experiment. The recovery of the iron component was over 95% by the physical treatment. We obtained tin oxide in the form of metastannic acid ($SnO_2{\cdot}xH_2O$) with impurities of less than 5% from the leaching treatment. We also recovered the high-purity metallurgical tin at a rate that exceeded 99.9% by the electrolysis of crude tin obtained from the hydrogen reduction of metastannic acid.

Study on the Surface Morphology and Control of Impurity by Organic Additive for Tin electro-refining (주석 전해정련에서 유기첨가제에 따른 표면형상 및 전해불순물 제어에 관한 연구)

  • Park, Sung Cheol;Son, Seong Ho;Kim, Yong Hwan;Han, Chul Woong;Lee, Ki-Woong
    • Resources Recycling
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    • v.25 no.4
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    • pp.49-53
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    • 2016
  • The electro-refining process was performed to purify the casted tin crude metal from waste tin in methanesulfonic acid. The surface morphologies of electrodeposited tin on cathode were observed, the dendrite and delamination were inhibited by glycol group of organic additive. The impurity concentrations of tin crude metal and deposited metal were analyzed using ICP-OES. Quantitative analysis on casted tin crude metal showed that it consists of tin with 97.280 wt.% and several impurity metals of Ag, Cu, Pb, Ni, and etc. After tin electro-refining, the purity of tin increased up to 99.956 wt.%. Reduction current by cyclic voltammetry seems to be closely related to behavior of impurity in tin electro-refining.

Recovery of Tin from Waste Tin Plating Solution by Ion Exchange Resin (주석도금폐액으로부터 이온교환수지를 이용한 주석 회수)

  • Shin, Gi-Wung;Kang, Yong-Ho;Ahn, Jae-Woo;Hyeon, Seung-Gyun
    • Resources Recycling
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    • v.24 no.3
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    • pp.51-58
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    • 2015
  • In order to recover tin from the waste tin plating solution, we used the ion exchange method using three types of ion exchange resins. The ion exchange resin with tertiary functional group(Lewatit TP 272) has not adsorption ratio of tin. The ion exchange resin with iminodiacetic functional group(Lewatit TP 207) has high adsorption ratio of tin, but impurity content in the recovered tin solution was relatively high. Whereas, in case of the ion exchange resin with functional group of ethylhexyl-phosphate(Lewatit VP OC 1026), adsorption ratio of tin was less than that of Lewatit TP 207. However, it was possible to remove impurities in the recovered tin solution by controlling the pH of the solution. High purity tin solution can be recovered by removing the organic materials with water washing process.

Effect of a seed layer on atomic layer deposition-grown tin oxide

  • Choi, Woon-Seop
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.128-128
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    • 2009
  • The effect of seed layer on the preparation of tin oxide thin film by ALD using tetrakis(ethylmethylamino) tin precursor was examined. The average growth rate of tin oxide film is about 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreases at the substrate temperature at $200^{\circ}C$. The seed effect was not observed in crystal growth of thin oxide. However, the crystalline growth of seed material in tin oxide was detected by thermal annealing. ALD-grown seeded tin oxide thin film after thermal annealed was characterized by ellipsometry, XRD, AFM and XPS.

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Effects of Seed Layer and Thermal Treatment on Atomic Layer Deposition-Grown Tin Oxide

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.5
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    • pp.222-225
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    • 2010
  • The preparation of tin oxide thin films by atomic layer deposition (ALD), using a tetrakis (ethylmethylamino) tin precursor, and the effects of a seed layer on film growth were examined. The average growth rate of tin oxide films was approximately 1.2 to 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreased at the substrate temperature at $200^{\circ}C$. A seed effect was not observed in the crystal growth of tin oxide. However, crystallinity and the growth of seed material were detected by XPS after thermal annealing. ALD-grown seeded tin oxide thin films, as-deposited and after thermal annealing, were characterized by X-ray diffraction, atomic force microscopy and XPS.

Synthesis and Characterization of Tin Nitride Thin Films Deposited by Low Nitrogen Gas Ratio

  • Park, Ju-Yeon;Gang, Yong-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.173.2-173.2
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    • 2014
  • Thin nitride thin films were synthesized by reactive radio-frequency magnetron sputtering in the ultra high vacuum (UHV) chamber. To control the characteristics of thin films, tin nitride thin films were obtained various argon and nitrogen gas mixtures, especially low nitrogen gas ratios. Tin nitride thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and 4 point probe measurement. The result of alpha step and SEM showed that the thickness of thin nitride thin films were decreased with increasing nitrogen gas ratios. The metallic tin structure was decreased and the amorphous tin nitride structure were observed by XRD with higher nitrogen gas ratios. The oxidation state of tin and nitride were studied with high resolution Sn 3d and N 1s XP spectra.

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Activity Collection Plan of Online Learner Using Tin-Can (Tin-Can을 이용한 온라인 학습자의 활동 수집 방안)

  • Lee, Seol-Hwa;Lim, Heui-Seok
    • Proceedings of the Korea Information Processing Society Conference
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    • 2015.10a
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    • pp.1655-1658
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    • 2015
  • Tin-Can은 SCORM의 한계를 극복하고자 미국 표준제정기관인 ADL(Advanced Distributed Learning)에서 개발하였다. SCORM의 차세대 버전으로 탄생한 Tin-Can은 Experience API (XAPI) 라고도 불리며 학습자가 학습경험을 얻는 과정을 저장하는 도구로써 각광을 받고 있다. 온라인 학습환경에서 중점 중의 하나는 Learning Analytics를 통하여 학습자에게 맞춤형 학습을 제공하는 것이다. 이를 위해서는 학습자의 활동 정보(Activity Data)를 데이터베이스화하는 것이 중요한데 위와 같은 기능들을 모두 제공해 줄 수 있는 것이 Tin-Can이다. 본 논문에서는 Tin-Can에 대해 설명하고, 온라인 학습환경에서 Tin-Can을 접목하여 학습 활동 정보를 수집하는 방법에 대해서 설명한다.

A New Technology of TIN for Port and Harbor (항만 공사에도 TIN시대 개막)

  • 김동휘
    • Proceedings of the Korean Society of Coastal and Ocean Engineers Conference
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    • 1995.10a
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    • pp.31-31
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    • 1995
  • TIN은 Triangulated Irregular Network의 약자로 불규칙한 대소삼각형의 집합으로 삼각망을 구성, 지표면을 Digital Terrain Model로 만드는 기법이다. 지표면(해저지형포함)은 수치화된 등고선의 벡터 데이터와 점의 표고데이터 또는 표고 평행배열의 Raster데이터로부터 모형화되며 또는 제 3의 방법인 TIN에 의해 모형화된다. 이 TIN에 의한 도형은 컴퓨터가 위성측량, 항공측량, 광파측량 또는 음차수심측량등 측량결과를 받아 어떤 특정 프로그램을 구동 삼각형의 정점에 해당하는 점의 X, Y, Z의 좌표로부터 닫한 삼각형을 작성한다. (중략)

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Incremental Insertion Method(IIM)를 이용한 TIN 생성 프로그램 개발

  • 김윤형;염재홍
    • Proceedings of the Korean Association of Geographic Inforamtion Studies Conference
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    • 2003.04a
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    • pp.608-615
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    • 2003
  • 수치지도에 존재하는 등고선의 절점(Vertex)과 표고점을 이용해서 수치표고모형을 생성하기 위하여 일반적으로 TIN을 이용한 방법이 사용된다. 불규칙적으로 분포되어져 있는 데이터를 이용해서 TIN을 구성하는 알고리즘은 여러가지가 존재하는데 본 연구에서는 Incremental Insertion Method(IIM)를 이용하였다. 하천이나 인위적인 작업으로 지형이 급격하게 변화되는 지형을 TIN 에 표현하기 위해서 사용되는 Break Line 이 본 연구에 적용되었으며, 절점(Vertex)이나 표고점이 잘못된 높이 값을 가짐으로써 수치표고모형에 발생하는 왜곡을 보정하기 위해서 이들 데이터를 TIN에서 제거하는 방법에 대한 연구가 수행되어졌다.

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