• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.222.1-222.1
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• 2015

Recently, graphene quantum dots (GQDs) have attracted great attention due to various properties including cost-effectiveness of synthesis, low toxicity, and high photostability. Nevertheless, the origins of photoluminescence (PL) from GQDs are unclear because of extrinsic states of the impurities, disorder structures, and oxygen-functional groups. Therefore, to utilize GQDs in various applications, their optical properties generated from the extrinsic states should be understood. In this work, we have focused on the effect of oxygen-functional groups in PL of the GQDs. The GQDs with nanoscale and single layer are synthesized by employing graphite nanoparticles (GNPs) with 4 nm. The series of GQDs with different amount of oxygen-functional groups were prepared by the chain of chemical oxidation and reduction process. The fabrication of a series of graphene oxide QDs (GOQDs) with different amounts of oxygen-contents is first reported by a direct oxidation route of GNPs. In addition, for preparing a series of reduced GOQDs (rGOQDs), we employed the conventional chemical reduction to GOQDs solution and controlled the amount of reduction agents. The GOQDs and rGOQDs showed irreversible PL properties even though both routes have similar amount of oxyen-functional groups. In the case of a series of GOQDs, the PL spectrum was clearly redshifted into blue and green-yellowish color. On the other hand, the PL spectrum of rGOQDs did not change significantly. By various optical measurement such as the PL excitation, UV-vis absorbance, and time-resolved PL, we could verify that their PL mechanisms of GOQDs and rGOQDs are closely associated with different atomic structures formed by chemical oxidation and reduction. Our study provides an important insights for understanding the optical properties of GQDs affected by oxygen-functional groups. [1]

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.49-54
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• 2016

$SrAl_{12}O_{19}:Ce_x{^{3+}}$,$Eu_{0.01}{^{2+}}$ phosphors were synthesized through a combustion process and their optical properties were investigated using time-resolved photoluminescence. A PL spectrum showed two dominant peaks which appeared at 300 and 410 nm. It is seen that, as the $Ce^{3+}$ concentration increases, the intensity of 300 nm decreases and the intensity of 410 nm increases. This behavior has been explained by two independent energy transfer mechanism. The first energy transfer occurs from $Ce^{3+}$ ion to $Eu^{3+}$ ion. The second energy transfer takes place from $Ce^{3+}$ ion to $Ce^{3+}-O_{ME}$ complex created in the magnetoplumbite structural host materials. The blue emitting 410 nm peak has been explained by both energy transfer mechanisms.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.762-767
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• 2001

We report the white light emission from the multilayer organic electroluminescent(EL) device using exciplex emission. The exciplex at 500nm originated between poly(N-vinylcarvazole)(PVK) and 2,5-bis(5'-tert-butyl-2-benzoxazoly)thiophene(BBOT) and exciplex of 50nm originated from N,N'-diphenyl-N,N'-(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) and BBOT were observed. Also, the energy transfer from PVK to BBOT and poly(3-hexylthiophene)(P3HT) in mixed emitting materials was occurred. The electroluminescence(EL) spectra of organic EL device which have a device structure of ITO/CuPc(5nm)/emitting layer(100nm)/BBOT(30nm)/LiF(1.4nm)/Al(200nm) were slightly changed as a function of the applied voltage. The luminance fo 12.3 ${\mu}$W/$\textrm{cm}^2$ was achieved at 20V and EL spectrum measured at 20V corresponds to Commission Internationale de L\`Eclairage(CIE) coordinates of x=0.29 and y=0.353.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.48-52
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• 2019

The blue emitting fluorescence of $SrAl_{12}O_{19}:Ce_{0.09}{^{3+}}$, $Eu_{0.01}{^{2+}}$ phosphor includes two kinds of independent energy transfer mechanism through electric multipole interactions between donor and acceptor ions. The first energy transfer takes place between the $Ce^{3+}$ ion and the $Eu^{2+}$ion which strongly depends on the concentration $Eu^{2+}$ions. The second energy transfer occurs between the $Ce^{3+}$ ion and the $O_{Me}-Ce^{3+}$ complexes. Both energy transfer mechanisms of blue emitting peak at 410 nm were investigated by fitting of Gaussian functions. The result shows that the peak at 410 nm is two overlapping emissions originated by $Eu^{2+}$ions and $O_{Me}-Ce^{3+}$ complexes and as time elapses $Eu^{2+}$peak remains whereas $O_{Me}-Ce^{3+}$ related peak disappears.