• 대한화학회지
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• 제48권4호
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• pp.339-350
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• 2004

피코초 시간분해능 전자 회절 분광법(TRED)을 이용하여 $CClF_3$ 분자의평형 구조를 연구하였다. 이 분광법의 분해능은 전자파의 선폭에 의하여 결정된다. 본 연구 방법에 의하여 결정된 $CClF_3$ 분자의 결합 길이들을 고전적인 실시간 전자회절 분광법(GED/RT)에 의하여 보고된 결과들과 비교하였다. GED/RT 방법에 의하여 결정된 C-F 결합 길이와 C-Cl 결합 길이는 각각 132.00(2) pm, 175.20(3) pm이고, TRED 방법에 의하여 결정된 C-F, C-Cl 결합 길이는 각각 132.23(13) pm, 177.23(19) pm 로써 이 두 실험 방법에 의하여 결정된 분자 결합 길이는 좋은 일치성을 보여준다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.85.2-85.2
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• 2016

With the advent of ultra-short high-intense XFEL (X-ray Free Electron Laser), time-resolved dynamics has become of great importance in exploring femtosecond real-world phenomena of nanoscience and biology. These include studying the response of materials to femtosecond laser excitation and investigating the interaction of XFEL itself with condensed matter. A variety of dynamic phenomena have been investigated such as radiation damage, ultrafast melting process, non-equilibrium phase transitions caused by orbital-lattice-spin couplings. As far as bulk materials are concerned, the sample size has no effect on the following dynamic process. As a result, imaging information is not required by and large. If the sample size is of tens of nanometers, however, sample starts to experience quantum confinement effect which, in turn, affects the following dynamic process. Therefore, to understand the fundamental dynamic phenomena in nano-science, time-resolved imaging information is essential. In this talk, we will briefly introduce scientific highlights achieved in XFEL-based dynamics. In case of bio-imaging, recent scientific topics will be mentioned as well. Finally, we will aim to present feasible topics in ultrafast time-resolved imaging and to discuss the future plan of CXI beamline at PAL-XFEL.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.323-323
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• 2013

High power light-emitting diodes (LEDs) are widely used in many device applications due to its ability to operate at high power and produce high luminance. However, releasing the heat accumulated in the device during operating time is a serious problem that needs to be resolved to ensure high optical efficiency. Ceramic or Aluminium base metal printed circuit boards are generally used as integral parts of communication and power devices due to its outstanding thermal dissipation capabilities as heat sink or heat spreader. We investigated the characterisation of electroless plating of Ni-B film according to plating bath temperature, ranging from $50^{\circ}C$ to $75^{\circ}C$ on Ag paste/anodised Al ($Al_2O_3$)/Al substrate to be used in metal PCB for high power LED packing systems. X-ray diffraction (XRD), Field-Emission Scanning Electron Microscopy (FE-SEM) and X-ray Photoelectron Spectroscopy (XPS) were used in the film analysis. By XRD result, the structure of the as deposited Ni-B film was amorphous irrespective of bath temperature. The activation energy of electroless Ni-B plating was 59.78 kJ/mol at the temperature region of $50{\sim}75^{\circ}C$. In addition, the Ni-B film grew selectively on the patterned Ag paste surface.