• Title/Summary/Keyword: TiRe

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Interfacial Microstructure of Diffusion-Bonded W-25Re/Ti/Graphite Joint and Its High-Temperature Stability (확산 접합에 의해 제조된 텅스텐-레늄 합금/티타늄/그래파이트 접합체의 미세구조 및 고온 안정성)

  • Kim, Joo-Hyung;Baek, Chang Yeon;Kim, Dong Seok;Lim, Seong Taek;Kim, Do Kyung
    • Korean Journal of Materials Research
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    • v.26 no.12
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    • pp.751-756
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    • 2016
  • Graphite was diffusion-bonded by hot-pressing to W-25Re alloy using a Ti interlayer. For the joining, a uniaxial pressure of 25 MPa was applied at $1600^{\circ}C$ for 2 hrs in an argon atmosphere with a heating rate of $10^{\circ}C\;min^{-1}$. The interfacial microstructure and elemental distribution of the W-25Re/Ti/Graphite joints were analyzed by scanning electron microscopy (SEM). Hot-pressed joints appeared to form a stable interlayer without any micro-cracking, pores, or defects. To investigate the high-temperature stability of the W-25Re/Ti/Graphite joint, an oxy-acetylene torch test was conducted for 30 seconds with oxygen and acetylene at a 1.3:1 ratio. Cross-sectional analysis of the joint was performed to compare the thickness of the oxide layer and its chemical composition. The thickness of W-25Re changed from 250 to $20{\mu}m$. In the elemental analysis, a high fraction of rhenium was detected at the surface oxidation layer of W-25Re, while the W-25Re matrix was found to maintain the initial weight ratio. Tungsten was first reacted with oxygen at a torch temperature over $2500^{\circ}C$ to form a tungsten oxide layer on the surface of W-25Re. Then, the remaining rhenium was subsequently reacted with oxygen to form rhenium oxide. The interfacial microstructure of the Ti-containing interlayer was stable after the torch test at a temperature over $2500^{\circ}C$.

Effect of Microstructural Factors on Fatigue and Fatigue Crack Propagation Behaviors of Mill-Annealed Ti-6Al-4V Alloy (미세조직적 인자가 밀소둔된 Ti-6Al-4V 합금의 피로 및 피로균열전파 거동에 미치는 영향)

  • Park, Sanghoo;Kim, Sumin;Lee, Daeun;Ahn, Soojin;Kim, Sangshik
    • Korean Journal of Metals and Materials
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    • v.56 no.12
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    • pp.845-853
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    • 2018
  • To understand the effect of microstructural factors (i.e., the size of ${\alpha}$ phase, equiaxed vs bimodal structure) on high cycle fatigue (HCF) and fatigue crack propagation (FCP) behaviors of mill-annealed Ti-6Al-4V (Ti64) alloy, three specimens of EQ (equiaxed)-8 (8 indicates the size of ${\alpha}$ grain), BM (bimodal)-8, and BM-16 were studied. The uniaxial HCF and FCP tests were conducted at an R ratio of 0.1 under sinusoidal fatigue loading. The microstructural influence (i.e., EQ vs BM) was not significant on the tensile properties of mill-annealed Ti64 alloy, and showed an increase in tensile strength and elongation with decreasing gauge thickness from 50 mm to 1.3 mm. The microstructure, on the other hand, affected the resistance to HCF substantially. It was found that the EQ structure in mill-annealed Ti64 has better resistance to HCF than the BM structure, as a result of different crack initiation mechanism. Unlike HCF behavior, the effect of microstructural features on the FCP behavior of mill-annealed Ti64 was not significant. Among the three specimens, BM-16 specimen showed the highest near-threshold ΔK value, probably because it had the greatest slip reversibility with large ${\alpha}$ grains. The effect of microstructural factors on the HCF and FCP behaviors of mill-annealed Ti64 alloy are discussed based on fractographic and micrographic observations.

A survey of experience-based preference of Nickel-Titanium rotary files and incidence of fracture among general dentists

  • Lee, WooCheol;Song, Minju;Kim, Euiseong;Lee, Hyojin;Kim, Hyeon-Cheol
    • Restorative Dentistry and Endodontics
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    • v.37 no.4
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    • pp.201-206
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    • 2012
  • Objectives: The purpose was to investigate the preference and usage technique of NiTi rotary instruments and to retrieve data on the frequency of re-use and the estimated incidence of file separation in the clinical practice among general dentists. Materials and Methods: A survey was disseminated via e-mail and on-site to 673 general dentists. The correlation between the operator's experience or preferred technique and frequency of re-use or incidence of file fracture was assessed. Results: A total of 348 dentists (51.7%) responded. The most frequently used NiTi instruments was ProFile (39.8%) followed by ProTaper. The most preferred preparation technique was crown-down (44.6%). 54.3% of the respondents re-used NiTi files more than 10 times. There was a significant correlation between experience with NiTi files and the number of re-uses (p = 0.0025). 54.6% of the respondents estimated experiencing file separation less than 5 times per year. The frequency of separation was significantly correlated with the instrumentation technique (p = 0.0003). Conclusions: A large number of general dentists in Korea prefer to re-use NiTi rotary files. As their experience with NiTi files increased, the number of re-uses increased, while the frequency of breakage decreased. Operators who adopt the hybrid technique showed less tendency of separation even with the increased number of re-use.

Improved Uniformity of Resistive Switching Characteristics in Ge0.5Se0.5-based ReRAM Device Using the Ag Nanocrystal (Ag Nanocrystal이 적용된 Ge0.5Se0.5-based ReRAM 소자의 Uniformity 특성 향상에 대한 연구)

  • Chung, Hong-Bay;Kim, Jang-Han;Nam, Ki-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.8
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    • pp.491-496
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    • 2014
  • The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

Microstructures and Dielectric Properties of $BaTiO_3$ Ceramics Sintered with Glass Frit (Glass frit를 첨가한 $BaTiO_3$ 세라믹스의 유전 특성과 미세구조 변화 관찰)

  • Woo, Duck-Hyun;Son, Yong-Ho;Yoon, Man-Soon;Ur, Soon-Chul;Kweon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.172-172
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    • 2009
  • $BaTiO_3$는 perovskite 구조를 가지는 대표적인 강유전체 재료로서 MLCC(Multi Layer Ceramic Capacitor), PTC thermistor등에 널리 사용되어지고 있다. 최근 고용량 MLCC 의 상업화와 함께 나노크기를 갖는 tetragonal phase의 $BaTiO_3$ 입자를 합성하기 위한 다양한 제조방법이 제시되고 있다. 또한 유전 특성과 온도특성 및 신뢰성을 향상시키기 위해 많은 첨가제들이 연구되어지고 있다. 따라서 이 번 연구에서는 선행 연구를 통해 얻어진 high energy mill을 이용한 고상반응법으로 제조된 $BaTiO_3$를 사용하였으며, 제조된 $BaTiO_3$ 분말에 glass frit를 첨가하여 소결온도 및 유전특성의 변화를 관찰하였다. 제조된 $BaTiO_3$ 분말은 200nm이하의 구형화와 균일한 입자크기를 보였으며, 선행연구를 통해 최적화된 glass frit의 양인 2.53wt%를 첨가하였고 1170, 1200, $1230^{\circ}C$에서 소결하여 소결온도에 따른 변화를 관찰하였다. 실험방법으로는 원료를 혼합하기 위하여 24시간 ball-mill을 이용하여 혼합하였으며, $\Phi15$로 성형하여 소결을 진행하였다. 실험진행 결과 모든 시편에서의 비유전율은 glass frit가 첨가되지 않은 조성보다 높게 나타났으며, $1200^{\circ}C$에서 소결한 시편의 비유전율($\varepsilon_r$)은 2300으로 glass frit가 첨가되지 않은 조성과 비교하여 21% 증가하여 최대치를 나타냈다. 또한 소결온도 $1200^{\circ}C$ 이상에서의 모든 시편에서는 95% 이상의 상대밀도를 나타내어, glass frit가 소결조제로써의 역할을 하는 것으로 나타났다. 따라서 본 연구를 통해 glass frit첨가로 인한 소결온도 감소 및 유전특성이 증가하는 것을 확인 하였다.

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The Etching Characteristics of $TiO_2$ ThinFilms Using the Inductively Coupled Plasma (유도 결합 플라즈마를 이용한 $TiO_2$ 박막의 식각 특성)

  • Joo, Young-Hee;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.385-385
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    • 2010
  • In this work, we have investigated the etching characteristics of $TiO_2$ and selectivity of $TiO_2$ over $SiO_2$ thin films as resistance in ReRAM using the inductively coupled plasma. The etch rate and selectivity were measured by varying the $BCl_3$ addition into Ar plasma. The maximum etchrate was obtained at 110.1nm/min at $BCl_3$/Ar=5sccm/10sccm, 500W for RFpower, -100v for DC-bias voltage, and 2Pa for the process pressure. The etched $TiO_2$ surface was investigated with X-ray photo electron spectroscopy. We explained the etching mechanism in two etch mechanisms, physiclas puttering and chemical reaction.

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