• Korean Journal of Materials Research
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• 제21권8호
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• pp.450-455
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• 2011

[ $Al_2TiO_5$ ]has a high refractive index and good solubility of the chromophore in the $Al_2TiO_5$ lattice, which allows this structure to be a good candidate for the development of new ceramic pigments. However, pure $Al_2TiO_5$ is well known to decompose on firing at $900{\sim}1100^{\circ}C$. However, this process can be inhibited by the incorporation of certain metal cations into its crystalline lattice. In this study, the synthesis of gray ceramic pigment was performed by doping cobalt on the $Al_2TiO_5$ crystal structure. The $Al_2TiO_5$ was synthesized using $Al_2O_3$ and $TiO_2$, and doped with $Co_3O_4$ as a chromophore material. In order to prevent the thermal decomposition during the cooling procedure, MgO was added to samples by 0.05 mole, 0.1 mole, and 0.15 mole as a stabilizer. The samples were fired at $1500^{\circ}C$ for 2 hours and cooled naturally. The crystal structure, solubility limit, and color of the synthesized pigment were analyzed using XRD, Raman spectroscopy, UV, and UV-vis. $Al_2O_3$ was available for the formation of $CoAl_2O_4$, which should also be considered in order to explain the small amount of this phase detected in the sample with the higher $Co^{2+}$ content (${\geq}$ 0.03 mole). It was found that the solubility limit of $Co^{2+}$ in the $Al_2TiO_5$ crystal was 0.02 mole% through an analysis of Raman spectroscopy. Through the addition of a pigment with 0.02 mole% of $Co^{2+}$ to lime-barium glaze, stabilized gray color pigments with 66.54, -2.35, and 4.68 as CIE-$L^*a^*b^*$ were synthesized.

• The Korean Journal of Ceramics
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• 제1권3호
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• pp.137-142
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• 1995

Monodispersed $Al_2O_3-TiO_2$ Powder was prepared by metal-alkoxide hydrolsis. A homogeneous nucleation/growth occurred in the solutions containing ethanol, butanol and acetonitrile, and resulted in spherical, submicrometer-sized powder. The titania and the alumina crystals were formed at $800^{\circ}C$ and $1000^{\circ}C$, respectively. These crystala were subsequently reacted each other beyond $1320^{\circ}C$ and formed $Al_2TiO_5$. The relative densities of sintered bodies prepared with as-received powder were examined at the temperature range of 1300-$1500^{\circ}C$ and they were about 79% at $1300^{\circ}C$. The formation of aluminum titanata decreased the relative density at the temperature range of 1300-$1450^{\circ}C$, and at above $1450^{\circ}C$, the relative density started to increase again. It was observed that $\alpha-Al_2O_3$-doped aluminum titanate was more stable than pure aluminum titante at $1200^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.251-251
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• 2007

A new type of a lead-free positive temperature coefficient of resistivity(PTCR) material. based on $(Bi_{1/2}Na_{1/2})TiO_3\;-\;BaTiO_3$ solid solution ceramics has been developed. The effect of $Nb_O_5$ and $Y_2O_3$ content on the electrical properties and the microstructure of (1-x) $(Bi_{1/2}Na_{1/2})TiO_3\;-\;x\;BaTiO_3$ (BNBT) ceramics made using a conventional mixed oxide process has been studied. The Curie Temperature was obviously increased with the increasing of $(B_{0.5}Na_{0.5})TiO_3$ content. The Y-doped BNBT ceramics(x=0.02) display low resistivity values of $10^2-10^3$ ohm*cm at room temperature and the Curie Temperature of $Tc=155^{\circ}C$.

• Proceedings of the Korean Ceranic Society Conference
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.61.2-61
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.141.2-141
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• 2003

• Transactions on Electrical and Electronic Materials
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• 제1권2호
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• pp.28-31
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• 2000

BaTiO$_3$cerameic thin films doped with Mn were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PRCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperature. Second heat treatment of the specimen were performed in the temperature range of 400 to 1350$\^{C}$ X-ray diffraction patterns of BaTiO$_3$ thin films show that the specimen heat treated below 600$\^{C}$ is an amorphous phase and the one heat treated above 1100$\^{C}$ forms a poly-crystallization . In this specimen heat-treated at 1300$\^{C}$, a lattice constant ratio(c/a) was 1.188. Scanning electron microscope(SEM) image of BaTiO$_3$ thin films of the specimen heat treated in between 900 and 1100$\^{C}$ shows a grain growth. At 1100$\^{C}$, the specimen stops grain-growing and becomes a poly-crystallization . A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn. A resistivity ratio between the value at room temperature and the one above Curie temperature was 10$^4$ for pure BaTiO$_3$ thin films and 10$\^$5/ fo BaTiO$_3$ : additive 0.127mol% MnO

• Transactions of the Korean hydrogen and new energy society
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• 제34권5호
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• pp.413-420
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• 2023

Holmium-doped TiO₂ nanotubes (Ho-TNTs) were manufactured through anodization treatment and electrochemical deposition, and optimization experiments were conducted using various Holmium doping concentrations and time as variables. Surface as well as electrochemical characteristics were analyzed to study the prepared photocatalysts. Ho-TNTs were found to exist only in anatase phase through X-ray diffraction analysis. Ho-TNTs with 0.01 wt% 100 seconds shows a photocurrent density of 3.788 mA/cm² and an effective photo-conversion efficiency (PCE) of 4.30%, which is more efficient than pure TiO₂ nanotubes (pure-TNTs) (at bias potential 1.5 V vs. Hg/HgO). The photocatalytic activity of the aforementioned Ho-TNTs for hydrogen production was evaluated with the result of -29.20 µmol/h·cm².

• Journal of the Microelectronics and Packaging Society
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• 제21권4호
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• pp.41-44
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• 2014

In this paper, we will investigate the activation energies of Nb for $TiO_2$ using Hall effect measurement and photoluminescence (PL) system. Nb-doped $TiO_2$ thin film was grown on $SrTiO_3$ substrate by pulsed laser deposition (PLD) technique. After measurements, activation energies of niobium donor were 14.52 meV in Hall effect measurement, and 6.72 meV in PL measurement, respectively. These results showed different tendencies which are measured from the samples with acceptor materials. Therefore, it is thought that more research on activation energies for dopants of shallow donor level is expected.

• Journal of the Korean Ceramic Society
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• 제34권2호
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• pp.181-187
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• 1997

The layered BaTiO3 thin films with a high dielectric constant of polycrystalline BaTiO3 and a good in-sulating property of amorphous BaTiO3 were prepared. And their electrical properties were characterized with stacking methods. The BaTiO3 thin films were prepared by rf-magnetron sputtering technique using a ceramic target on Indium-doped Tin oxide coated glasses. A new stacking method resulted in higher dielec-tric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decrease the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a mul-tilayered amorphous/microcrystalline/polycrystalline structure, which was confirmed indirectly by AES depth profile.

• Korean Journal of Materials Research
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• 제20권5호
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.