• Journal of Korean Vacuum Science & Technology
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• 제2권1호
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• pp.25-31
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• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• Journal of the Korean Applied Science and Technology
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• 제29권3호
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• pp.466-472
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• 2012

Visible-light-responding photocatalysts, $N-TiO_2$, were prepared by nitrogen doping onto $TiO_2$. The crystalline structure and morphology, doping state of the prepared photocatalysts were characterized by XRD, FE-SEM, and XPS. The activity of the prepared photocatalysts was examined by the decomposition of methyleneblue. The prepared catalysts were anatase type and the crystallinity was increased with pH. The particle sizes of the prepared catalysts were 5.42, 5.99, 7.58 nm at pH 2.2, 4.7, 9.0, respectively. The particle sizes of the prepared catalysts were slightly increased with pH. The activity of the photocatalysts was directly proportional to the crystallinity of the catalysts. $N-TiO_2$ prepared by nitrogen doping onto $TiO_2$ showed activity under visible light. The doped nitrogen was located not in the lattice but on the surface.

• Journal of the Korean Ceramic Society
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• 제28권6호
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• pp.451-456
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• 1991

Electrical properties of 0.15 mol% Y2O3 doped semiconducting BaTiO3 ceramics have been investigated as functions of Pb5Ge3O11 contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 1150$^{\circ}C$ to 1300$^{\circ}C$). The low-temperature sintered BaTiO3 ceramics above 1150$^{\circ}C$ show increase of Curie temperature due to the diffusion of Pb+2 ions, and their PTCR effects decrease. As the sintering temperature increases the room temperature resistance decreases due to the growth of the grain, but the room temperature resistance increases with the increase of the Pb5Ge3O11 contents by the formation of thick insulating layers at the grain boundary.

• ETRI Journal
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• 제38권3호
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• pp.469-478
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• 2016

In this paper, we investigate the effects of pre-reducing Sb-doped $SnO_2$ (ATO) electrodes in viologen-anchored $TiO_2$ (VTO) nanostructure-based electrochromic devices. We find that by pre-reducing an ATO electrode, the operating voltage of a VTO nanostructure-based electrochromic device can be lowered; consequently, such a device can be operated more stably with less hysteresis. Further, we find that a pre-reduction of the ATO electrode does not affect the coloration efficiency of such a device. The aforementioned effects of a pre-reduction are attributed to the fact that a pre-reduced ATO electrode is more compatible with a VTO nanostructure-based electrochromic device than a non-pre-reduced ATO electrode, because of the initial oxidized state of the other electrode of the device, that is, a VTO nanostructure-based electrode. The oxidation state of a pre-reduced ATO electrode plays a very important role in the operation of a VTO nanostructure-based electrochromic device because it strongly influences charge movement during electrochromic switching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.483-484
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• 2006

$Eu^{3+}$와 $Pr^{3+}$이 첨가된 $SrTiO_3$형광체를 고상반응법으로 제조하였다. $SrTiO_3:Pr$형광체는 $^3P_J(J=0,1,2){\rightarrow}^3H_4$에 의한 490nm 부근의 녹색발광과 $^1D_2{\rightarrow}^3H_4$에 의한 618nm 의 적색발광이 동시에 나타났다. $SrTiO_3:Eu$형광체는 $SrTiO_3:Pr$형광체와 달리 $^5D_0{\rightarrow}^7F_1$에 의한 583nm와 $^5D_0{\rightarrow}^7F_2$에 의한 610nm의 적색발광만 각각 관찰되었다. $SrTiO_3$의 모체에서 $Eu^{3+}$는 inversion sysmmetry를 가짐으로써 610nm의 electric dipole transition 보다는 583nm의 magnetic dipole transition이 강하게 일어났다.

• Electrical & Electronic Materials
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• 제9권6호
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• pp.605-615
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• 1996

In this paper, the effect of alkaline oxide addition such as Li$_{2}$O and Na$_{2}$O on the microstructure and humidity sensitivity of V$_{2}$O$_{5}$(2 mol%)-doped TiO$_{2}$(98 mol%) was investigated as a function of amount (0, 1, 2, 5, 10 mol%) of Li$_{2}$O and Na$_{2}$O additives. The pores in the alkaline free sample were distributed mostly in the range between 0.16 and 1.0.mu.m in diameter and its porosity was 23.29%. Li$_{2}$O caused grain overgrowth and reduced the porosity with a narrow distribution of the pore size, leading to poor humidity sensitivity. Na$_{2}$O helped to enlarge the distribution of the pore size through the formation of small soluble phases. The pore sizes of the sample containing Na$_{2}$O 2mol% were distributed mostly in the range between 1.0 and 2.5.mu.m in diameter and its porosity and intrusion volume of mercury were 31.13 % and 0.1155 mL/g respectively, which consequently improved the humidity sensing characteristics such as the sensitivity and temperature-stability. Especially, the addition of 2mol% of Na$_{2}$O improved the humidity-sensing characteristics such as sensitivity and linearity in the whole range between 30 and 90 %RH (Percentage Relative Humidity)y)

• Journal of the Korean Ceramic Society
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• 제28권5호
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• pp.347-352
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• 1991

The effects of Ta2O3 doping on the microstructure, electrical properties and thermal expansion in Pb(Zr0.525Ti0.475)O3 ceramics were studied. Density, average grain size, electromechanical coupling factor kp and thermal expansion coefficient of unpoled and poled samples were measured as a function of Ta2O5 content. Average grain size was decreased and density increased above 0.6 mol% Ta2O5 addition. In case of 0.2 mol% addition, density showed minimum according to grain growth. Dielectric constant and electromechanical coupling factor kp were the lowest in 0.2 mol% addition increased with Ta2O5 addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.153-156
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their dielectric properties were investigated with variation of composition ratio, doped ZrO$_2$ (0.5, 1.0, 1.5, 2.0, 3.0 wt%) and sintered at 145$0^{\circ}C$. The dielectric constant and loss of the x=0.10 specimen applied field were 19.86 and 0.302 % at 0 V/cm, and 25.937 and 0.339 % at 300 V/cm, respectively. Dielectric constant were increased with increased applied field and decreased with increased frequency, and dielectric loss were within 0.1% at applied 800 MHz, respectively. all specimens showed fairly good applied field. Although, dielectric constant and loss of all specimen showed to tend of nearly the same. same.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.31.1-31.1
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• 2011

$Li_4Ti_5O_{12}$ is emerging as a promising material with its good structure stability and little volume change during the electrochemical reaction. However, its electrochemical performance is significantly limited by low electronic or ionic conductivity. In addition, high tap density is needed forim proving its volumetric energy density and commercialization. To enhance these properties, the spherical-like $Li_4Ti_5O_{12}$ particles were synthesized and carried out doping with yttrium. Prepared Y-doped $Li_4Ti_5O_{12}$ as a anode material showed great capacity retention rate of 92% (5C/0.2C), compared with no dope done. Consequently, it was found that Y doping into $Li_4Ti_5O_{12}$ matrix reduces the polarization and resistance on SEI layer during the electrochemical reaction.

• Journal of Sensor Science and Technology
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• 제23권5호
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• pp.337-341
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• 2014

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.