• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.178-183
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• 2002

The PLZT (x/50/50, x = 1, 2, 5, 7) thin films have been prepared by a sol-gel method using polypropanediol as a solvent, and their dielectric properties have been investigated. The prepared sol was coated 10 times on $Pt/Ti/SiO2_2$/Si wafer. After post-annealing at 560~$600^{\circ}C$ for 10 min, the 600 nm-thick PLZT (x/50/50) thin films were formed with pure perovskite phase. Grain size of the PLZT (x/50/50) thin films was increased with increasing the amount of La. For all the compositions, dielectric properties such as dielectric constant and remnant polarization were enhanced with increasing annealing temperatures. As the amount of La was increased, the remnant polarization, coercive field and dielectric constant of the PLZT (x/50/50) thin films fired at $600^{\circ}C$ were decreased.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.176-182
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• 2002

Amorphous $TiO_2$ thin films were deposited on glass substrates by ion beam sputtering in which the ratio of $O_2$/Ar gas used as discharged gas was varied from 0 to 2. After optical and microstructure properties and chemical composition of thin films was analyzed, antireflection coating layers were fabricated with $SiO_2$/$TiO_2$ multi-layers. Thin films deposition was performed at room temperature and ion beam voltage and ion current density for sputtering of target were fixed at 1.2 kV and 200 $\mu\textrm{A}/\textrm{cm}^2$, respectively. Refractive indexs of the deposited $TiO_2$films were 2.40-2.45 at a wavelength of 633 nm. $TiO_2$films had high transmission and stoichiometry when ratio of $O_2$/Ar was 1. Rms roughness of deposited $TiO_2$ film was below 7 $\AA$. In excessive $O_2$ environments, however Rms roughness increased over 50 $\AA$. Transmittance decreased by scattering of rough surface. Reflectance of $SiO_2$/$TiO_2$multi-layers was below 1% in visible light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.385-385
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• 2010

In this work, we have investigated the etching characteristics of $TiO_2$ and selectivity of $TiO_2$ over $SiO_2$ thin films as resistance in ReRAM using the inductively coupled plasma. The etch rate and selectivity were measured by varying the $BCl_3$ addition into Ar plasma. The maximum etchrate was obtained at 110.1nm/min at $BCl_3$/Ar=5sccm/10sccm, 500W for RFpower, -100v for DC-bias voltage, and 2Pa for the process pressure. The etched $TiO_2$ surface was investigated with X-ray photo electron spectroscopy. We explained the etching mechanism in two etch mechanisms, physiclas puttering and chemical reaction.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.329-332
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• 1989

Lead titanate thin films were deposited on titanium substrates by a chemical vapour deposition(CVD) process involving the application of vapour mixtures of Pb, ethyl titanate( Ti($C_2H_5O_4$)), and oxygen. The lead titanate having a stoichiometric composition has a dc conductivity of $3.2{\times}10^{-12}{\Omega}^{-1}{\cdot}cm^{-1}$ at room temperature. The nonsaturating loops observed in present investigation may be attributed to the $TiO_2$ and TiO layers between the conductive substrate and the $PbTiO_3$ ferroelectric film. The ferroelectric properties of the stoichiometric $PbTiO_3$ film included a remanent polarization of 14.1 ${\mu}C/cm^2$ and a coercive field of 20.16 kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.209-209
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• 2010

Multiferroic properties of $BaTiO_3-CuFe_2O_4$ thin films grown on highly-textured Pt(111)/$TiO_2/SiO_2$/Si(100) substrates were studied. $CuFe_2O_4$ ceramic target was synthesized by mixing oxide powders of CuO, $Fe_2O_03$, $BaTiO_3$ ceramic target was also prepared separately. The film structure was of bi-layer type, where $BaTiO_3$ layer lies underneath of $CuFe_2O_4$ layer, where both layers were grown by pulsed laser deposition technique. We will report the ferroelectric and magnetic properties of $BaTiO_3-CuFe_2O_4$ bi-layer films in some detail.

• Korean Chemical Engineering Research
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• v.44 no.4
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• pp.399-403
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• 2006

There has been numerous reports for the synthesis of mesoporous $TiO_2$ thin films due to not only the high surface area and regular mesoscale pores but also wide band gap and photo activity. However, the synthesis has been restricted by the limited reproducibility mainly due to the extraordinarily fast hydrolysis and condensation rate of titania precursors. In this report, molar composition of reaction batch (HCl/Ti and Ti/P123) and exterior condition (humidity and temperature) during coating and anealing process. Thereafter, the mesoporous $TiO_2$ thin films were characterized by XRD and TEM

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.41-45
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• 2007

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.576-580
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• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2333-2336
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• 2010

$TiO_2$ thin films were synthesized on carbon fibers using chemical vapor deposition. We show that these films can exhibit extraordinarily high absorption capacities of toluene vapor. Such an absorption phenomenon of toluene at room temperature was not found for other $TiO_2$ samples. Upon toluene absorption change in the color (darkening) of the film was found, indicating that these films can be used as an indicator of the existence of volatile organic compounds in the indoor environments. By X-ray Photoelectron Spectroscopy (XPS) and Scanning Electron Microscopy (SEM), a high concentration of OH species and a unique layered structure were found for the $TiO_2$ films and these could be related to their high absorption capacity of toluene.

• Korean Journal of Materials Research
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• v.31 no.1
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• pp.8-15
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• 2021

Transparent, photocatalytic, and self-cleaning TiO2 thin film is developed by TiO2 sol-gel coating on glass and polycarbonate (PC) substrates. Acetyl acetone (AcAc) suppresses the precipitation of TiO2 by forming a yellowish (complex) transparent sol-gel. XPS analysis confirms the presence of Ti2p and O1s in the thin films on glass and PC substrates. The TiO2-sol is prepared by stabilizing titanium (IV) isopropoxide (TTIP) with diethylamine and methyl alcohol. The addition of AcAcsilane coupling solution to the TiO2-sol instantaneously turns to yellowish color owing to the complexing of titanium with AcAc. The AcAc solution substantially improves the photocatalytic property of the TiO2 coating layer in MB solutions. The coated TiO2 film exhibits super hydrophilicity without and with light irradiation. The TiO2 thin film stabilized by adding 8.7 wt% AcAc shows the highest photo-degradation for methylene blue (MB) solution under UV light irradiation. Also, the optimum photocatalytic activity is obtained for the 8.7 wt% AcAc-stabilized TiO2 coating layer calcined at 450 ℃. The thin-films on glass exhibit fast self-cleaning from oleic acid contamination within 45 min of UV-light irradiation. The appropriate curing time at 140 ℃ improves the anti-fogging and thermal stability of the TiO2 film coated on PC substrate. The watermark-free PC substrate is particularly beneficial to combat fogging problems of transparent substrates.