• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.26-32
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• 2008

Effects of annealing treatment on microstructure and mechanical property of co-sputtered TiNi thin films were studied. As-deposited films showed amorphous state. However, above annealing temperature of $500^{\circ}C$ martensite phase (B19'), precipitate phase ($Ti_2Ni$) and a small amount of parent phase ($B_2$) were present, and phase transformation behaviors were three multi-step phase transformations $B19^{\prime}{\rightarrow}B_2$ and $B_2{\rightarrow}R-phase$ and $R-phase{\rightarrow}B19^{\prime}$. Increase of martensite transformation temperature, increase of microhardness and Young's modulus of TiNi films annealed above $500^{\circ}C$ were discussed in terms of precipitate phase.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.563-564
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• 2012

• Transactions of the Korean hydrogen and new energy society
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• v.10 no.4
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• pp.211-217
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• 1999

In order to investigate the possibilities of microbatteries using TiNi type metal hydride, TiNi films were prepared by DC magnetron sputtering. The films were deposited under various Ar flow rates, DC powers and target-to-substrate distances to find the optimum sputtering conditions. The deposition rate of TiNi thin film increased by increasing the DC power and by decreasing the Ar flow rate and target-to-substrate distance. The chemical composition of the film changed as a target-to-substrate distance. The crystal structure of the film was amorphous state just after deposition and changed to crystalline by vacuum heat treatment.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.116-121
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• 2007

TiNi shape memory alloy(SMA) was fabricated by PLD(plused laser deposition) using equiatomic TiNi target. Composition and crystallization of TiNi thin films which were fabricated in ambient Ar gas(200m Torr)and vacuum($5{\times}10^{-6}\;Torr$) were investigated. Composition of TiNi thin films was characterized by energy-dispersive X-ray spectrometry (EDXS) and crystallization was confirmed by X-ray diffraction (XRD). The composition of films depends on the distance between target and substrate but does not sensitively depend on the substrate temperature. It is found that the composition of films can be easily controlled when substrate is placed inside plume in ambient Ar gas. It is also found that the in situ crystallization temperature ($ca.\;400^{\circ}C$) in ambient Ar gas is lowered in comparison with that of TiNi film prepared under vacuum. The low crystallization temperature in ambient Ar gas makes it possible to prepare the crystalline TiNi thin film without contamination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.91-91
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• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• Journal of Magnetics
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• v.17 no.2
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• pp.78-82
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• 2012

CoNiFe(CNF)/$BaTiO_3(BTO)$/CoNiFe(CNF) multilayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using pulsed laser deposition (PLD) system. We fabricated three different thin films of BTO, BTO/CNF and CNF/BTO/CNF for magneto-capacitor and studied their crystalline structure, surface and interface morphology, and magnetic and electrical properties. When three different structures of multilayered thin film were compared, magnetization of CNF/BTO/CNF thin films was decreased by magnetic and dielectric interaction. Also we confirmed that capacitance of CNF/BTO/CNF multilayered thin film was enhanced as being near tetragonal structure with increasing of c/a ratio because of atomic bonding at interface between BTO dielectric and CNF magnetic materials. Finally, we studied the change of the capacitance of CNF/BTO/CNF multilayered thin film with magnetic field for emergence of magnetocapacitance and suggested a possibility of enhanced capacitance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.157-158
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• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• Journal of the Korean Magnetics Society
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• v.12 no.3
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• pp.94-98
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• 2002

Sputtering conditions and various underlayer such as Al, Cu, Ni, Cr, Ag, Mg, Fe, Co, Pd, Au, Pt, Mo and Hf were investigated for coercivity enhancement of 20 nm Ti/CoCrPt thin films in order to increase the coercivity of the films thinner than 20 nm. Among them, Ag and Mg were effective to increase the coercivity. Particularly 2 nm Ag was very effective to increase the coercivity and nucleation field as well as to reduce ${\alpha}$ value in CoCrPt thin film such that the coercivity of 2 nm Ag/18 nm Ti/10 nm CoCrPt film was 2200 Oe. However, it seemed that other coercivity enhancement mechanism operated in CoCrPt films because Ti (002) preferred texture was not developed with Ag underlayer contrary to a general expectation. And the coercivity and nucleation field were decreased when glass substrate with rougher surface was used.