• 제목/요약/키워드: TiN interlayer

검색결과 53건 처리시간 0.024초

Co-interlayer와 TiN capping을 적용한 니켈실리사이드의 0.1um CMOS 소자 특성 연구 (Characterization of Ni SALICIDE process with Co interlayer and TiN capping layer for 0.1um CMOS device)

  • 오순영;지희환;배미숙;윤장근;김용구;황빈봉;박영호;이희덕;왕진석
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
    • /
    • pp.671-674
    • /
    • 2003
  • 본 논문에서는 Cobalt interlayer 와 Titanium Nitride(TiN) capping layer를 Ni SALICIDE의 단점인 열 안정성과 sheet resistance 와 series 저항을 감소시키는데 적용하여 0.lum 급 CMOS 소자의 특성을 연구하였다. 첫째로, Ni/Si 의 interface 에 Co interlayer 를 증착하여 Nickel Silicide의 단점인 열 안정성 평가인 700℃, 30min의 furnace annealing 후에 낮은 sheet resistance와 누설전류를 줄일 수 있었다. 두번째로, TiN caping layer를 적용하여 실리사이드 형성시 산소와의 반응을 막아 실리사이드의 표면특성을 향상시켜 누설전류의 특성을 개선하였다. 결과적으로 소자의 구동전류 향상, 누설전류 저하, 낮은 면저항으로 소자의 특성을 개선하였다.

  • PDF

A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs

  • Lee, Horyeong;Li, Meng;Oh, Jungwoo;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제15권1호
    • /
    • pp.41-47
    • /
    • 2015
  • In this paper, the effective electron Schottky barrier height (${\Phi}_{Bn}$) of the Ni silicide/n-silicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ${\Phi}_{Bn}$ is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ${\Phi}_{Bn}$ of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.

TiN 중간층을 이용한 수처리용 BDD 전극 (Reactive sputtered tin adhesion for wastewater treatment of BDD electrodes)

  • KIM, Seo-Han;KIM, Shin;KIM, Tae-Hun;SONG, Pung-Keun
    • 한국표면공학회:학술대회논문집
    • /
    • 한국표면공학회 2017년도 춘계학술대회 논문집
    • /
    • pp.69-69
    • /
    • 2017
  • For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. There effluents are mainly treated by conventional technologies such are aerobic, anaerobic treatment and chemical coagulation. But, there processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These techniques include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that show higher purification results and low toxic sludge. There are many kinds of electrode materials for electrochemical process, among them, boron doped diamond (BDD) attracts attention due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD, among them, researches are focused BDD on Si substrate. But, Si substrate is hard to apply electrode application due to the brittleness and low life time. And other substrates are also not suitable for wastewater treatment electrode due to high cost. To solve these problems, Ti has been candidate as substrate in consideration of cost and properties. But there are critical issues about adhesion that must be overcome to apply Ti as substrate. In this study, to overcome this problem, TiN interlayer is introduced between BDD and Ti substrate. TiN has higher electrical and thermal conductivity, melting point, and similar crystalline structure with diamond. The TiN interlayer was deposited by reactive DC magnetron sputtering (DCMS) with thickness of 50 nm, $1{\mu}m$. The microstructure of BDD films with TiN interlayer were estimated by FE-SEM and XRD. There are no significant differences in surface grain size despite of various interlayer. In wastewater treatment results, the BDD electrode with TiN (50nm) showed the highest electrolysis speed at livestock wastewater treatment experiments. It is thought to be that TiN with thickness of 50 nm successfully suppressed formation of TiC that harmful to adhesion. And TiN with thickness of $1{\mu}m$ cannot suppress TiC formation.

  • PDF

DC Magetron Suttering법으로 제작한 Ti$_{x}$N 박막의 밀착력에 미치는 첨가원소(C,H,O) (The Effects of Additional Gases(C,H,O) on Adhesive strength Ti$_{x}$N Films Prepared by the DC Magetron Suttering Method)

  • 김학동;조성식
    • 한국표면공학회지
    • /
    • 제31권3호
    • /
    • pp.142-150
    • /
    • 1998
  • Stainless steel is being used widely for various purposes due to its good corrosion resistance. There has been much research to produce colored stainless steel by several methods such as anodizing and ion plating. In this experiment, we coated TiN(C,O,H)films SUS304 substraate with the DC magnetron spttering system made by Leybold Heraeus and studied the interlater structure and abhesive strength of the films as a function of additional gases, acetylene, hydrogen and oxygen. When the acetylene gas was added into the chamber, the specimen with the interlayer phase had good adhesion due to the toughness of the $\gamma'-Fe_4N$ plase induced from a solid solution of carbon atoms, while low adhesion appeared on the specimen of the non interlayer phase. The formation of the interlayer phase($\gamma'-Fe_4N$) was due to hydrogen embrittlement and internal stress induced by $\gamma'-Fe_4N$ formation in the interlayer. We could fine the interlayer phase ($\gamma'-Fe_4N$) at the interface between the film and the substrate of the TEM image when $\gamma'-Fe_4N$ was detected by the X-ray duffraction metheod.

  • PDF

TiN 박막을 코팅한 드릴의 수명향상에 관한 연구 (A Study on the Life Enhancement of TiN Coated Drill)

  • 김홍우;김문일
    • 대한기계학회논문집
    • /
    • 제16권12호
    • /
    • pp.2340-2348
    • /
    • 1992
  • 본 연구에서는 드릴(SKH9종)에 스퍼터링법으로 Ti 중간층을 약 0.2$\mu\textrm{m}$의 두께 로 코팅한후, 그 위에 플라즈마 화학증착법으로 TiN박막을 코팅한 드릴로 드릴링 시험 을 행하여 수명을 평가하였으며, 드릴의 내마멸성 및 드릴링한 구멍 내면의 조도를 코 팅하지 않은 드릴 및 TiN 코팅한 드릴과 비교하므로서 Ti/TiN코팅처리에 의한 공구성 능 및 수명향상 효과를 평가하고자 하였다.

AIP 와 스퍼터링으로 복합증착된 420 스테인리스강의 TiN과 CrN 박막에 미치는 중간층의 영향 (Effect of Interlayer on TiN and CrN Thin Films of STS 420 Hybrid-Deposited by AlP and DC Magnetron Sputtering)

  • 최웅섭;김현승;박범수;이경구;이도재;이광민
    • 한국재료학회지
    • /
    • 제17권5호
    • /
    • pp.256-262
    • /
    • 2007
  • Effects of interlayer and the combination of different coating methods on the mechanical and corrosion behaviors of TiN and CrN coated on 420 stainless steel have been studied. STS 420 specimen were tempered at $300^{\circ}C$ for 1 hr in vacuum furnace. The TiN and CrN thin film with 2 ${\mu}m$ thickness were coated by arc ion plating and DC magnetron sputtering following the formation of interlayer for pure titanium and chromium with 0.2 ${\mu}m$ thickness. The microstructure and surface analysis of the specimen were conducted by using SEM, XRD and roughness tester. Mechanical properties such as hardness and adhesion also were examined. XRD patterns of TiN thin films showed that preferred TiN (111) orientation was observed. The peaks of CrN (111) and $Cr_2N$ (300) were only observed in CrN thin films deposited by arc ion plating. Both TiN and CrN deposited by arc ion plating had the higher adhesion and hardness compared to those formed by magnetron sputtering. The specimen of TiN and CrN on which interlayer deposited by magnetron sputtering and thin film deposited by arc ion plating had the highest adhesion with 22.2 N and 19.2 N. respectively. TiN and CrN samples shown the most noble corrosion potentials when the interlayers were deposited by using magnetron sputtering and the metal nitrides were deposited by using arc ion plating. The most noble corrosion potentials of TiN and CrN were found to be approximately -170 and -70 mV, respectively.

Studies on weldment performance of Ti/Al dissimilar sheet metal joints using laser beam welding

  • Kalaiselvan, K.;Elango, A.;Nagarajan, N.M.;Mathiazhagan, N.;Vignesh, Kannan
    • Coupled systems mechanics
    • /
    • 제7권5호
    • /
    • pp.627-634
    • /
    • 2018
  • Laser beam welding is more advantageous compared to conventional methods. Titanium/Aluminium dissimilar alloy thin sheet metals are difficult to weld due to large difference in melting point. The performance of the weldment depends upon interlayer formation and distribution of intermetallics. During welding, aluminium gets lost at the temperature below the melting point of titanium. Therefore, it is needed to improve a new metal joining techniques between these two alloys. The present work is carried for welding TI6AL4V and AA2024 alloy by using Nd:YAG Pulsed laser welding unit. The performance of the butt welded interlayer structures are discussed in detail using hardness test and SEM. Test results reveal that interlayer fracture is caused near aluminium side due to low strength at the weld joint.

이온플레팅에 의한 TiN 증착중 계면형성과 박막 미소조직에 관한 연구 (A Study on the Formation of Interface and the Thin Film Microstructure in TiN Deposited by Ion Plating)

  • 여종석;이종민;한봉희
    • 한국표면공학회지
    • /
    • 제24권2호
    • /
    • pp.73-79
    • /
    • 1991
  • Recent studies son surface coatings have shown that the change of physical, chemical and crystallographic structure analysed and observed according to the deposition process variables has the effects on the resultant film properties. Under the same preparation condition conditions of the substrate and process variables, physical morphology variations characterized by substrate temperature and bias which offect the surface mobility of adatom and adhesion variations related to the formation of Ti interlayer were considered in the present study. Microhardness showed the highest value around 40$0^{\circ}C$ of the substrate temperature and increased with the substrate bias. Adhesion was improved with the increase of substrate temperature and bias. An interlayer of pure titanium formed prior to deposition of TiN improves the adhesion at its optimum thickness. These results were explained by the change of physical morphology and phase analysis.

  • PDF