• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.163-170
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• 2013

Selective catalytic reduction of $NO_x$ by $NH_3$ ($NH_3$-SCR) over $V_2O_5/TiO_2$-based catalysts is recently reported to be an anthropogenic emitter of $N_2O$ that is a global warming gas with a global warming potential of 310. Therefore, this review will get a touch on significance of some parameters regarding $N_2O$ formation in the $deNO_xing$ reaction for fossil fuels-fired power plants applications. The $N_2O$ production in $NH_3$-SCR reaction with such catalysts occurs via side reactions between $NO_x$ and $NH_3$ in addition to $NH_3$ oxidation, and the extent of these undesired reactions depends strongly on the loadings of $V_2O_5$ as a primary active component and the promoter as a secondary one ($WO_3$ and $MoO_3$) in the SCR catalysts, the feed and operating variables such as reaction temperature, $NO_2/NO_x$ ratio, oxygen concentration, gas hourly space velocity, water content and thermal excursion, and the physical and chemical histories of the catalysts on site. Although all these parameters are associated with the $N_2O$ formation in $deNO_xing$ reaction, details of some of them have been discussed and a better way of suppressing the $N_2O$ production in commercial SCR plants has been proposed.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.63-63
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.60.2-60.2
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• 2011

본 연구에서는 Indium-free 및 gallium-free 기반의 산화물 TFT를 제작하기 위해 n-type $TiO_2$ 반도체 기반의 thin film transistor ($Mo/TiO_{2-x}/SiO_2/p+\;+Si$)를 oxygen deficient black $TiO_{2-x}$ 타겟을 이용하여 DC magnetron sputtering 공법으로 제작하고 그 특성을 분석하였다. DC magnetron sputtering 공법으로 성막된 $TiO_{2-x}$ semiconductor의 전기적, 광학적, 화학적 결합 에너지 및 구조적 특성 분석을 위해 semiconductor parameter analyzer (Aglient 4156-C), UV/Vis spectrometer, X-ray Photoelectron Spectroscopy, Transmission Electron Microscopy를 각각 이용하여 분석하였으며 이를 RTA 전/후 특성 비교를 통하여 관찰하였다. $TiO_{2-x}$ TFT의 소자 특성은 RTA 열처리 전/후 전형적인 insulator 특성에서 semiconductor 특성으로 변화되는 것을 관찰할 수 있었으며, 최적화된 열처리 공정에서 filed effect mobility 0.69 $cm^2$/Vs, on to off current ratio $2.04{\times}10^7$, sub-threshold swing 2.45 V/decade와 Vth 10.45 V를 확보할 수 있었다. 또한 RTA 열처리 후 밴드갭이 3.25에서 3.41로 확장되는 특성을 나타내었다. 특히 RTA 열처리 후 stoichiometric $TiO_2$ 상태와는 다른 $Ti^{2+}$, $Ti^{3+}$, $Ti^{4+}$ 등의 다양한 oxidation states가 관찰되었으며 이러한 oxidation states를 $TiO_{2-x}$ 박막에서의 oxygen deficient 상태와 연관시킴으로써 oxygen vacancy의 n-type dopant로의 거동을 확인하였다. $TiO_2$ 채널 기반의 TFT 특성을 통하여서 indium free 또는 gallium free 산화물 채널로써의 가능성을 확인하였다.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.05a
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• pp.818-823
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• 1995

방사성 폐기물 소각로에서 발생하는 off-gas중에는 NOx가 포함되어 있으며 이를 제어하기 위하여 NOx 배출의 재어에 효과적이라고 알려진 SCR법을 사용하여 실험을 행하였다. NOx 방출 저감화를 위해 상업화된 다양한 촉매들 중에서 V$_2$O$_{5}$, MoO$_3$ Fe$_2$O$_3$ 그리고 SnO$_2$를 TiO$_2$honeycomb형태의 담체에 담지시켜 제조한 촉매들의 특성을 조사하고 여러 변수들, 예를 들면 촉매의 종류, 담체의 종류, 반응온도, feed의 조성 등이 반응특성에 미치는 영향을 실험실 규모의 반응기에서 조사하였다. 10%V$_2$O$_{5}$TiO$_2$촉매가 35$0^{\circ}C$에서 94.4%의 높은 NO-$N_2$전환율을 보였으며 열적 안정성이 높은 SnO$_2$나 MoO$_3$의 첨가는 높은 전환율을 보이는 온도 범위를 확장시켜 주었다.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2471-2476
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• 2007

A series of titanium complexes containing terdentate β-ketoiminate ligands were found to be efficient for the ring-opening polymerization of ε-caprolactone (ε-CL), producing poly(ε-caprolactone) (PCL) with bimodal distribution. Steric factors imposed by methyl substituents on the back bone of the alkoxy group affected significantly the polymerization rate and physical properties of the resulting PCL. Intra- and intermolecular transesterifications rather than disproportional rearrangements were responsible for the bimodal behavior and for the change in the molecular weight (Mw). Dilution with toluene reduced yield, and lowered polydispersity (PDI) and Mw of PCL, while the catalytic activities of the dimeric complex, [Ti(Oi-Pr)2(N-alkoxy-β- ketoiminate)]2 and Ti(Oi-Pr)4 were not sensitive to the added solvent. The dimeric complex showed living character, while other catalysts suffered from chain termination reactions.

• The Journal of Korean Academy of Prosthodontics
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• v.31 no.3
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• pp.423-446
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• 1993

Titanium and its alloys are finding increasing use in medical devices and dental implants. The strong selling point of titanium is its resistance to the highly corrosive body fluids in which an implant must survive. This corrosion resistance is due to a tenacious passive oxide or film which exists on the metal's surface and renders it passive. Potentiodynamic polarization measurement is one of the most commonly used electro-chemical methods that have been applied to measure corrosion rates. And the potentiodynamic polarization test supplies detailed information such as open circuit, rupture, and passivation potential. Furthermore, it indicates the passive range and sensitivity to pitting corrosion. This study was designed to compare the corrosion resistance of the commonly used dental implant materials such as CP Ti, Ti-6A1-4V, Co-Cr-Mo alloy, and 316L stainless steel. And the effects of galvanic couples between titanium and the dental alloys were assessed for their useful-ness-as. materials for superstructure. The working electrode is the specimen , the reference electrode is a saturated calomel electrode (SCE), and the counter electrode is made of carbon. In $N_2-saturated$ 0.9% NaCl solutions, the potential scanning was performed starting from -800mV (SCE) and the scan rate was 1 mV/sec. At least three different polarization measurements were carried out for each material on separate specimen. The galvanic corrosion measurements were conducted in the zero-shunt ammeter with an implant supraconstruction surface ratio of 1:1. The contact current density was recorded over a 24-hour period. The results were as follows : 1. In potential-time curve, all specimens became increasingly more noble after immersion in the test solution and reached between -70mV and 50mV (SCE) respectively after 12 hours. 2. The Ti and Ti alloy in the saline solution were most resistant to corrosion. They showed the typical passive behavior which was exhibited over the entire experimental range. Therefore no breakdown potentials were observed. 3. Comparing the rupture potentials, Ti and Ti alloy had the high(:st value (because their break-down potentials were not observed in this study potential range ) followed by Co-Cr-Mo alloy and stainless steel (316L). So , the corrosion resistance of titanium was cecellent, Co-Cr-Mo alloy slightly inferior and stainless steel (316L) much less. 4. The contact current density sinks faster than any other galvanic couple in the case of Ti/gold alloy. 5. Ag-Pd alloy coupled with Ti yielded high current density in the early stage. Furthermore, Ti became anodic. 6. Ti/Ni-Cr alloy showed a relatively high galvanic current and a tendency to increase.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.1-1
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• 2001

비휘발성 메모리 소자로의 응용의 관점에서, sol-gel 방법으로 La 을 10mo1% 로 고정시킨 PLZT (10/y/z) 박막을 제작하여 Zr/Ti 조성비에 따른 구조적 및 전기적 특성을 조사하였다. PLZT(10/40/60) 박막은 로제트와 파이로클로르 상이 관찰되었으며, Zr/Ti 조성비에서 Ti 함유량이 증가함에 따라, (100) 배향성, 결정립 크기와 표면 거칠기는 증가되었다. 또한 Zr/Ti 조성비에서 Ti 함유량이 증가함에 따라, 10㎑ 에서 비유전율은 600 에서 400 으로 감소된 반면, 유전손실은 0.028 에서 0.053 로 증가되었으며, 170 ㎸/cm 에서 누설전류밀도는 1.64×$10^{-6}$ 에서 1.26×$10^{-7}$A/㎠ 으로 감소되었다. 그리고 ± 170㎸/㎝ 에서 측정한 PLZT 박막의 이력곡선을 측정한 결과, Zr/Ti 조성비가 40/60 에서 0/100 로 변화함에 따라 PLZT 박막의 잔류분극과 항전계는 6.62 에서 12.86 μC/cm2, 32.15 에서 56.45㎸/㎝ 로 각각 증가되었으며, 피로와 retention 특성 역시 개선되었다. PLZT 박막에 ±5V 의 사각펄스를 $10^9$ 회 인가하여 피로특성을 측정한 결과, PLZT(10/40/60) 박막의 잔류분극은 초기분극값으로부터 50% 감소된 반면, PLZT(10/0/100) 박막은 30% 감소되었다. 또, $10^5$ 초의 retention 결과에서 PLZT(10/0/100) 박막은 초기분극값에서 오직 11% 만이 감소된 반면, PLZT(10/40/60) 박막은 40% 감소되었다.

• Journal of Plant Biology
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• v.16 no.3_4
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• pp.40-44
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• 1973

Hawkeye(Fe-chlorosis resistant) and PI 54619-5-1(Fe-chlorosis sensitive) soybeans were grown with and without DPTA(diethylene triamine pentaacetic acid) in Yolo loam soil. The major purpose of the study was to compare leaf-stem distribution of microelements for different treatments which increase concentrations of microelements in plants to evaluate the role of the chelating agent in increasing translocation of the microelements. Plant responses and yields were recorded and Fe, Mn, Zn, Cu, Al, Co, N, Sn, Pb and Mo contents of leaves and stems were determined by emission spectrography. Sulfur(soil pH4) increased leaf concentrations of Mn, Zn, Cu, CO, Ni, Sn and Pb. DTPA, particularly at 50ppm in soil, increased leaf concentrations of Fe, Mn, Zn, Cu, Co, Ni and Mo. It increased Ti in leaves for the PI 54619-5-1 soybeans only. DTPA increased the ratios of the concentration in leaves to that in stems for Fe, Zn, Cu, Al, Ti, CO, Ni and Mo. Sulfur which increased the microelement concentration in both leaves and stems did not have this effect. DTPA increased the ratio at soil pH 6 and 8.5 in leaves to that in stems of the bush bean plants for Fe, Zn, Cu, Ni, but to a lesser extent in bush beans than in soybeans. PI 54619-5-1 soybeans tended to contain less of most of the metals than did Hawkeye soybeans.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.