• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.732-734
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• 2003

A solvothermal synthetic method to $BaTiO_3$ nanoparticle has been investigated in toluene solution with $BaTi(OR)_6$ as precursor. A precursor prepared from barium metal with toluene, isopropanol and titanium isopropoxide was used as a starting material. Weight ratio of precursor to solvent prepared in the mixture are 5/100, 10/100, 20/100 and 50/100wt%. At the weight ratio of 50/100wt%, $BaTiO_3$ butterfly twin crystalline(${\fallingdotseq}100nm$) was obtained after synthesis at $250^{\circ}C$ for 20hrs in an autoclave. X-ray diffraction and transmission electron microscopy showed that the product of 50/100wt% has crystallization. At 5/100, 10/100, and 20/100wt%, however, red colloidal solution was obtained after synthesis and crystalline phase of $BaTiO_3$ was not produced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.894-897
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• 2004

Sodum bismuth titanate $(Na_{0.5}Bi_{0.5}TiO_3$ or NBT) thin films coated on the $LaNiO_3$ (LNO) electrode by sol-gel methode and rapid thermal annealing (RTA) technique. The NBT (NBT/LNO/Si) thin films examined by x-ray diffraction (XRD). The orientation of NBT was observed for films coated at $900^{\circ}C$, 5 min and $600^{\circ}C$, 60 min. Filed emission scanning electron microscopy (FE-SEM) showed uniform surface composed of grains. The grain size of NBT thin films increased with increasing annealing temperature.

• Journal of the Korean Ceramic Society
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• v.45 no.6
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• pp.331-335
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• 2008

The purpose of this study is to characterize the photo-catalytic efficiency of $TiO_2$ nanotube with respect to the distribution of anatase phase which can be changed by the annealing temperature of $TiO_2$ nanotube. $TiO_2$ nanotube was fabricated by the anodization method in the 0.5 wt% HF electrolyte. And then the $TiO_2$ nanotube was annealed at temperatures ranging from $380^{\circ}C$ to $780^{\circ}C$ in dry oxygen ambient for 2 h. For the photo-catalytic water-splitting tests, the photocurrent density was measured as a function of applied potential with a potentiostat using a Ag/AgCl reference, Pt counter electrode, and 1 M KOH electrolyte under illumination of UV by a Xe arc lamp of 1 KW. According to the UV photo-catalytic water-splitting tests, the nanotube annealed at $560^{\circ}C$ was found to show the highest photocurrent density.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.629-635
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• 2000

The texture evolution during isothermal forging and subsequent heat treatment in Ti-48.5at%Al-0.6at%Mo alloy was investigated. Especially, in the present study, research interest was focused on the interrelation between lamellar volume fraction and textures varied with the change of heat-treated time and temperature. It was found that texture components having ND┴{302) and TD$\perp${100} with minor TD$\perp${111} were developed by isothermal forging. In addition, when the followed heat-treatment time and temperature increased from $1330^{\circ}C$/10h to $1350^{\circ}C$/20h respectively, both the lamellar volume fraction and the intensity of textures mentioned above also gradually increased. However, the tensile elongation at room temperature decreased oppositely, as the lamellar volume fraction increased. These results suggested that tensile properties of $\gamma$-TiAl with the nearly lamellar microstructure at room temperature were affected more strongly by the microstructural features such as lamellar volume fraction rather than by textures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.176-180
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• 2006

[ $(Na_{0.5}Bi_{0.5})TiO_3$ ][NBT] thin films were prepared on a highly (100) oriented $LaNiO_3[LNO]$ by sol-gel process. X-ray diffraction patterns of the NBT films annealed above $600^{\circ}C$ for 5 minutes have confirmed a highly (100) oriented growth and pseudocubic structure (a=3.884${\AA}$). The (l00) orientation factor increased from 90 to $99\%$ with increasing soaking time from 5 to 60 minutes at $600^{\circ}C$. The NBT films ($600^{\circ}C$/5 min,) have a flat and dense microstructure with large columnar grains, and their grain size are about 44 nm. The Au/NBT/LNO/Si hetero structure sample show a ferroelectric properties.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.368-375
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• 1995

Thermal CVD method is in general used for the fabrication of TiC/$Al_2O_3$-coated carbide tools. The growth of TiC layer and the coating morphology depended on the chemical composition of the hard metal substrate on which the tool properties were strongly influenced. TiC-coated layer was grown by the diffusion of carbon from the substrate, whereas the growth of $Al_2O_3$ layer was unrelated to the composition of substrate. In the nitride hard coatings of Zr, Nb and Mo metals deposited on high speed steel substrate by magnetron sputtering, the reactivity of the metal elements was decreased with increasing group number in one period of the periodic system. The hard material films exhibited the highest adhesion with the chemical composition of stoichiometry or substoichiometry. The critical load as a measure of adhesion was evaluated using scratch tester. The CVD tools indicated the values of 80 and 40N in the coated layers with proper bonding to the substrate and with $\eta$ phase of 1$\mu\textrm{m}$ in the interface respectively, but the nitride films prepared by sputtering of PVD showed only the values between 10 and 20N.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.959-962
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• 2000

We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1${\mu}{\textrm}{m}$. When BaTiO$_3$ is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4$\times$10$^4$ A/$\textrm{cm}^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.297-297
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• 2007

The $(B_{0.5},Sr_{0.5})TiO_3$ ceramics, which added with low sintering materials $Li_2CO_3$ and ZnBO, was investigated for LTCC(low temperature co-fired ceramic) applications. To compare sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ respectively, we added 1, 2, 3, 4, and 5wt% of $Li_2CO_3$ and ZnBO to $(B_{0.5},Sr_{0.5})TiO_3$. For confirming the sintering temperature, the respective specimens were sintered from $750^{\circ}C$ to $1200^{\circ}C$ by $50^{\circ}C$. The case of $Li_2CO_3$ greatly lowered the sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ ($1350^{\circ}C$) below $900^{\circ}C$. The addition of ZnBO improved the loss tangent of $(B_{0.5},Sr_{0.5})TiO_3$. The crystalline structure of $LiCO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ and ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$ was analyzed with the X-ray diffraction (XRD) analysis. The dielectric permittivity and loss tangent of $Li_2CO_3$ doped BST and ZnBO doped BST were measured with the HP 4284A precision. From the electrical characterization, we respectively obtained the dielectric permittivity 1361, loss tangent $6.94{\times}10^{-3}$ at $Li_2CO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ (3wt%) and the dielectric constant 1180, loss tangent $3.70{\times}10^{-3}$ at ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$(5wt%).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.253-257
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• 2015

The implanting of metal products is performed with numerous surface treatments because of toxicity and adhesion. Recently, the surface modification of metal products has been actively studied by coating the surface of the TiC or TiN film. We prepared a Ti(10%)Ag Target which may be used in dental oral material by, using the AIP(arc ion plating) system TiAgN coating layer that was deposited on Ti g.23. The purpose of this study was to establish the optimal bias voltage conditions of the coated TiAgN layer formed by the AIP process. The TiAgN coatings were prepared with different bias voltage parameters (0V to -500V) to investigate the effect of bias voltage on their mechanical and chemical properties. The SEM(scanning electron microscope), EDS(energy dispersive X-ray spectrometer), XRD(X-ray diffraction), micro-hardness, and potentiodynamic polarization were measured and the surface characteristics of the TiAgN coating layers were evaluated. The TiAgN coating layer had different mechanical characteristics based on the bias voltage, which also showed differences in thickness and composition.