• 전자공학회논문지D
• /
• 제34D권1호
• /
• pp.23-29
• /
• 1997

Effects of Co thickness on the formation of epitaxial $CoSi_2$ from the Co/Ti bilayer have been investigated. Ti and Co were sequentially deposited with the Ti thickness fixed at 5 or 10nm, while the Co thickness was varied from 5 to 30nm. The metal-deposited samples were then rapidly thermal-annealed in $N_2$ at $900^{\circ}C$ for 20 sec. Material properties of $CoSi_2$ thin films were analyzed by the 4-point probe, XRD, AES, andXTEM. When the as-deposited Co thickness was below 15nm, the $CoSi_2$ with high resistivity and rough interface was formed. On the other hand, when the Co thickness was above 15 nm, the epitaxial $CoSi_2$ with the resistivity of about 16 ~ 19 $\mu\Omega.cm$, uniform composition and thickness and flat interface was formed. Initial Ti thickness has sizable effect on the formation of $CoSi_2$, when the Co layer was very thin (~ 5 nm). But there was no significant effect of the Ti thickness for the initial Co thickness of above 15 nm.

• 한국재료학회지
• /
• 제19권4호
• /
• pp.207-211
• /
• 2009

In this study, we attempted to develop a convenient aluminizing process, using Al-Ti mixed slurry as an aluminum source, to control the Al content of the aluminized layer as a result of a one-step process and can be widely adopted for coating complex-shaped components. The aluminizing process was carried out by the heat treatment on disc and rod shaped S45C steel substrates with Al-Ti mixed slurries that were composed of various mixed ratios (wt%) of Al and Ti powders. The surface of the resultant aluminized layer was relatively smooth with no obvious cracks. The aluminized layers mainly contain an Fe-Al compound as the bulk phase. However, the Al concentration and the thickness of the aluminized layer gradually decrease as the Ti proportion among Al-Ti mixed slurries increases. It has also been shown that the Al-Ti compound layer, which formed on the substrate during heat treatment, easily separates from the substrate. In addition, the incorporation of Ti into the substrate surface during heat treatment was not observed.

• 한국전기전자재료학회논문지
• /
• 제11권6호
• /
• pp.436-441
• /
• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• 한국전기전자재료학회논문지
• /
• 제33권5호
• /
• pp.373-379
• /
• 2020

In this study, TiN-coated cBN (cubic-structure boron nitride) powders were successfully synthesized by a sol-gel method using titanium (IV) isopropoxide (TTIP) and by controlling the heat treatment conditions. After the sol-gel process, amorphous nano-sized TiO_x was uniformly coated on the surface of cBN powder particles. The obtained TiO_x-coated cBN powders were heated at 1,000~1,300℃ for 1 or 6 h in a flow of 95%N₂-5%H₂ mixed gas. With increasing temperature, the chemical composition of the TiO_x coating layer changed in the order of TiO₂→Ti₆O₁₁→Ti₄O₇→TiN due to reduction of the Ti ions. The TiN coating layer was observable in the samples heated at 1,200℃ and appeared as the main phase in the sample heated at 1,300℃. The resulting thickness of the TiN coating layer of the sample heated at 1,300℃ was approximately 45~50 nm.

• 전자공학회논문지A
• /
• 제30A권10호
• /
• pp.59-66
• /
• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• 한국표면공학회지
• /
• 제41권2호
• /
• pp.57-62
• /
• 2008

Electrochemical properties of Ti-30Ta-$(3{\sim}15)$Nb alloys coated by HA/Ti compound layer have been studied by various electrochemical method. Ti-30Ta binary alloys contained 3, 7, 10, and 15 wt% Nb contents were manufactured by the vacuum furnace system. The specimens were homogenized for 24 hrs at $1000^{\circ}C$. The samples were cut and polished for corrosion test and coating. It was coated with HA/Ti compound layer by magnetron sputter. The HA/Ti non-coated and coated morphology of Ti alloy were analyzed by x-ray diffractometer(XRD) and filed emission scanning electron microscope(FE-SEM). The corrosion behaviors were investigated using potentiodynamic method in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The homoginazed Ti-30Ta-$(3{\sim}15wt%$)Nb alloys showed the ${\alpha}+{\beta}$ phase, and ${\beta}$ phase peak was predominantly appeared with increasing Nb content. The microstructure of Ti alloy was transformed from needle-like structure to equiaxed structure as Nb content increased. HA/Ti composite surface showed uniform coating layer with 750 nm thickness. The corrosion resistance of HA/Ti composite coated Ti-alloys were higher than those of the non-coated samples in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. Especially, corrosion resistance of Ti-Ta-Nb system increased as Nb content increased.

• 열처리공학회지
• /
• 제10권2호
• /
• pp.150-156
• /
• 1997

The effect of variation of pack activators, compositions, temperature and time on the thickness and structure of aluminide coatings formed on the TiAl alloy was studied in one-step packs and two-step packs containing aluminum for the purpose of improvement of oxidation resistance. The thickness of coating layer was increased with increasing $NH_4Cl$ content up to 3wt% and then it was saturated. Oxidation resistance of coating layers carried out at one step pack was superior to that of ones through of two step pack. The improvement of high temperature oxidation resistance was due to the formation of a protective $Al_2O_3$ surface layers and coating the alloys with $TiAl_3$ phase.

• 마이크로전자및패키징학회지
• /
• 제11권3호
• /
• pp.63-70
• /
• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
• /
• pp.167-168
• /
• 2002

In this study, the effects of oxide layer formed on the wear tracks of TiN coated silicon wafer on friction characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with $1\;{\mu}m$ in coating thickness. AISI 52100 steel balls were used for the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction characteristics using X-ray diffraction (XRD). scanning electron microscopy (SEM) and friction force microscope (FFM).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.484.2-484.2
• /
• 2014

There are many efforts to improving the power conversion efficiencies (PCEs) of dye-sensitized solar cells (DSCs). Although DSCs have a low production cost, their low PCE and low thermal stability have limited commercial applications. This study describes the preparation of a novel multifunctional polymer gel electrolyte in which a cross-linking polymerization reaction is used to encapsulate $TiO_2$ nanoparticles toward improving the power conversion efficiency and long-term stability of a quasi-solid state DSC. A series of liquid junction dye-sensitized solar cells (DSCs) was fabricated based on polymer membrane encapsulated dye-sensitized $TiO_2$ nanoparticles, prepared using a surface-induced cross-linking polymerization reaction, to investigate the dependence of the solar cell performance on the encapsulating membrane layer thickness. The ion conductivity decreased as the membrane thickness increased; however, the long term-stability of the devices improved with increasing membrane thickness. Nanoparticles encapsulated in a thick membrane (ca. 37 nm), obtained using a 90 min polymerization time, exhibited excellent pore filling among $TiO_2$ particles. This nanoparticle layer was used to fabricate a thin-layered, quasi-solid state DSC. The thick membrane prevented short-circuit paths from forming between the counter and the $TiO_2$ electrode, thereby reducing the minimum necessary electrode separation distance. The quasi-solid state DSC yielded a high power conversion efficiency (7.6/8.1%) and excellent stability during heating at $65^{\circ}C$ over 30 days. These performance characteristics were superior to those obtained from a conventional DSC (7.5/3.5%) prepared using a $TiO_2$ active layer with the same thickness. The reduced electrode separation distance shortened the charge transport pathways, which compensated for the reduced ion conductivity in the polymer gel electrolyte. Excellent pore filling on the $TiO_2$ particles minimized the exposure of the dye to the liquid and reduced dye detachment.