• Title/Summary/Keyword: Ti-oxide

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The Electrochemical Characteristics of Anodized Ti-29Nb-xZr Alloys

  • Lee, Kang;Choe, Han-Choel;Ko, Yeong-Mu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.219-219
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    • 2009
  • In this study, electrochemical impedance characteristics of anodic oxide layer formed on titanium ternary alloy surface have been investigated, Titanium oxide layers were grown on Ti-29Nb-xZr(x=3, 5, 7, 10 and 15 wt%) alloy substrates using phosphoric acid electrolytes.

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A study on the Oxide Semiconductors electrodes for DSSC (염료감응형 태양전지를 위한 산화물반도체 전극에 관한 연구)

  • Hwang, Hyun Suk;Kim, Hyung Jin
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.7
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    • pp.4925-4929
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    • 2015
  • Dye-sensitized solar cell(DSSC) has aroused intense interest owing to its competitive price and stabilized properties than Si based solar cells. Recently, many studies have been reported on the DSSC, especially development of a transparent conductive oxide-less dye-sensitized solar cell(TCO-less DSSC). In this paper, a thick and porous Ti electrode for low cost DSSC developed its properties. To estimate the Ti electrode, the films are tested FESEM and J-V evaluation method. An increase in Ti thickness from 50 nm to 200 nm mainly affects the fill factor without noticeably changing the photocurrent density. It was confirmed that optimal DSSC efficiency was obtained at Ti 150 nm.

The Effects of Organic Contamination and Surface Roughness on Cylindrical Capacitors of DRAM during Wet Cleaning Process

  • Ahn, Young-Ki;Ahn, Duk-Min;Yang, Ji-Chul;Kulkarni, Atul;Choi, Hoo-Mi;Kim, Tae-Sung
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.3
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    • pp.15-19
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    • 2011
  • The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.

Investigation of the Contact Resistance Between Amorphous Silicon-Zinc-Tin-Oxide Thin Film Transistors and Different Electrodes Using the Transmission Line Method

  • Lee, Byeong Hyeon;Han, Sangmin;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.1
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    • pp.46-49
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    • 2016
  • A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×102 Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm2 V−1s−1, S.S of 0.9 Vdecade−1, and on/off current ratio of 9.7×106 A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

AFM morphology of $TiO_2$ electrode with differential sintering temperature and efficiency properties Dye-Sensitized solar cells (소결 온도 변화에 따른 $TiO_2$ 전극의 AFM 표면형상 비교 및 DSC 효율 특성)

  • Kim, Hyun-Ju;Lee, Dong-Yun;Koo, Bo-Kun;Lee, Won-Jae;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.461-462
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    • 2005
  • In order to improve the efficiency of dye-sensitized solar cell (DSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature(350 to $550^{\circ}C$). $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSC were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). From the measurement results, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSC were mutually complementary, enhancing highest fill factor and efficiency. Consequently, it was considered that optimum sintering temperature of $\alpha$-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

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Molten Salt-Based Carbon-Neutral Critical Metal Smelting Process From Oxide Feedstocks

  • Wan-Bae Kim;Woo-Seok Choi;Gyu-Seok Lim;Vladislav E. Ri;Soo-Haeng Cho;Suk-Cheol Kwon;Hayk Nersisyan;Jong-Hyeon Lee
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.21 no.1
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    • pp.9-22
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    • 2023
  • Spin-off pyroprocessing technology and inert anode materials to replace the conventional carbon-based smelting process for critical materials were introduced. Efforts to select inert anode materials through numerical analysis and selected experimental results were devised for the high-throughput reduction of oxide feedstocks. The electrochemical properties of the inert anode material were evaluated, and stable electrolysis behavior and CaCu generation were observed during molten salt recycling. Thereafter, CuTi was prepared by reacting rutile (TiO2) with CaCu in a Ti crucible. The formation of CuTi was confirmed when the concentration of CaO in the molten salt was controlled at 7.5mol%. A laboratory-scale electrorefining study was conducted using CuTi(Zr, Hf) alloys as the anodes, with a Ti electrodeposit conforming to the ASTM B299 standard recovered using a pilot-scale electrorefining device.

TiO2 Thin Film Coating on an Nb-Si-Based Superalloy via Atomic Layer Deposition (원자층 증착법을 통한 Nb-Si계 초내열합금 분말 상의 TiO2 박막 증착 연구)

  • Ji Young Park;Su Min Eun;Jongmin Byun;Byung Joon Choi
    • Journal of Powder Materials
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    • v.31 no.3
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    • pp.255-262
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    • 2024
  • Nano-oxide dispersion-strengthened (ODS) superalloys have attracted attention because of their outstanding mechanical reinforcement mechanism. Dispersed oxides increase the material's strength by preventing grain growth and recrystallization, as well as increasing creep resistance. In this research, atomic layer deposition (ALD) was applied to synthesize an ODS alloy. It is useful to coat conformal thin films even on complex matrix shapes, such as nanorods or powders. We coated an Nb-Si-based superalloy with TiO2 thin film by using rotary-reactor type thermal ALD. TiO2 was grown by controlling the deposition recipe, reactor temperature, N2 flow rate, and rotor speed. We could confirm the formation of uniform TiO2 film on the surface of the superalloy. This process was successfully applied to the synthesis of an ODS alloy, which could be a new field of ALD applications.