• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.510-515
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• 1999

Synthesize of anatase type $TiO_2$ from $TiCl_4$ solution was studied. KOH was used on dehydration reaction of $TiCl_4$ solution. Products of dehydration reaction was calcined at 300, 500, 700, 900, $1000^{\circ}C$ during 1hour. Calcined products was studied by XRD, DTA, and FT-IR for effect of calcined temperature. The results are as follow. \circled1 Product pf dehydration reaction at$ 90^{\circ}C$ was semicrystalline anatase type $TiO_2$ because it has a peak vary broad and low at the position of anatase crysral XRD pattern. \circled2 Pure titanium oxide semi-crystalline products were produced at acid pH condition which convert to anatase crystal at $300^{\circ}C$ and to rutile crystal at $700^{\circ}C$. \circled3 The chemical composition of semicrystalline products which was produce at alkali pH conditions, were potasium titante. Potasium-titanate semi-crystalline products crystallized at 630~$640^{\circ}C$ \circled4 The transition temperature of potassium dopped titanium oxide semi-crystalline products was increased with the contents of potasium. \circled5 The optimum synthesise condition of anatase $TiO_2$ products from $TiCl_4$ and KOH are pH 3~5 and $300^{\circ}C$ calcination.

• Resources Recycling
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• v.28 no.3
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• pp.45-52
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• 2019

$TiO_2$ as a raw material for producing titanium can be produced by carbon reduction of natural ilmenite ores over 1823 K and acid leaching of the obtained titanium-rich slag. However, the conventional process can cause very high energy consumption and a large amount of leaching residues. In the present study, we proposed the sulfurization of $FeTiO_3$ with $Na_2SO_4$ at temperatures below 1573 K, which can separate Fe in $FeTiO_3$ as the FeS based sulfide phase and Ti as the $TiO_2-Na_2O$ based oxide phase. This study is a fundamental study for sulfurization of $FeTiO_3$ to investigate the influence of reducing atmosphere, reaction temperature and the sulfur/Fe ratio on the separability and distribution behaviors of of Fe, Ti, and Na between the oxide phase and the sulfurized phase. At 1573 K and carbon saturation condition, the Fe can be separated from $FeTiO_3$ as Fe-C-S metal and a part of FeS, and the concentration of Fe in oxide decreased to 4 mass% after sulfurization.

• Korean Chemical Engineering Research
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• v.61 no.2
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• pp.296-301
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• 2023

Solid oxide fuel cell has received more attention recently due to the fuel flexibility via internal reforming. Commonly used Ni/YSZ anode, however, can be easily deactivated by carbon coking in hydrocarbon fuels. The carbon deposition problem can minimize by developing alternative perovskite anode. This study is focused on improving conductivity and catalytic activity of the perovskite anode by introducing rGO (reduced graphene oxide). Sr_0.92Y_0.08TiO₃(SYT) anode with perovskite structure was synthesized with 1wt% of rGO. The presence of rGO during anode fabricating process and cell operation is confirmed through XPS and Raman analysis. The maximum power density of rGO/SYT anode improved to 3 times in H₂ and 6 times in CH₄ comparing to that of SYT anode due to the high electrical conductivity and good catalytic activity for CH₄.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.284-291
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• 1997

The electrode characteristics of two kinds of metal hydride electrodes using V-Ti (V-rich) based alloy were studied, in which one electrode was prepared by sintering the mixture of V-Ti alloy and Ni powders by a rapid thermal annealing technique and the other one was prepared using V-Ti-Ni ternary alloy, The discharge capacities of all electrodes during the charge-discharge cycling were completely deteriorated within 10 cycles. It appeared that the deterioration of the electrodes was caused by the dissolution of V in the near-surface region into the electrolyte and the formation of $TiO_2$ layer on the alloy particle surface. This degradation mechanism was supported by the facts that V is main hydride forming element and $TiO_2$ has very low electrical conductivity and hydrogen diffusivity.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.484-492
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• 1998

The formation mechanism of the epitaxial cobalt silicide from Co/Ti/OOO) Si structure has been investigated. The transition temperature of CoSi to CoSi, was found to increase with increasing the Ti interlayer thickness, which may be owing to the occupation of the tetrahedral sites by Ti atoms in the CoSi crystal structure as well as the blocking effect of the Ti interlayer on the diffusion of Co. Also, the Co- Ti-O ternary compound formed at the metal! Si interface at the begining of silicidation, which seems to play an important role in epitaxial growth of Co silicide. The final layer structures obtained after a rapid thermal annealing of the Cot Ti/( 100) Si bi-layer structure turned out to be Ti oxide/Co- Ti-Si/epi-$CoSi_2$/OOO)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.204-208
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• 2012

$TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.

• Applied Chemistry for Engineering
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• v.19 no.2
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• pp.236-241
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• 2008

The possibility of silicon oxidation through the aerial-diffusion of active oxygen species has been evaluated. The species originate from the surface of $TiO_2$ exposed by UV. Among process parameters such as UV intensity, substrate temperature and chamber pressure with oxygen, UV intensity was a major parameter to the influence on the oxide growth rate. When 1 kW high pressure Hg lamp was used as a UV source, the growth rate of silicon oxide was 8 times as faster as that of a 60 W BLB lamp. However, as the chamber pressure increased, the growth rate was declined due to the suppression of aerial diffusion of active oxygen species. According to the results, it could be confirmed that the aerial-diffusion of active oxygen species from UV-irradiated photocatalytic surface can be applied to a new method for preparing an ultra-thin silicon oxide at the range of relatively low temperature.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.528-532
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• 2002

Anodic $TiO_2$film on Ti substrate was fabricated at 180V in sulfuric acid solutions containing phosphoric acid and hydrogen peroxide. Effects of the anodizing conditions on the morphology of the oxide layers, and chemical states of the component elements of the layers were studied primarily using SEM, XRD, AFM, and XPS. The pores in the oxide layer was not uniform in size, shape, and growth direction particularly near the interface between the substrate and the oxide layer, compared with those of the surface layer. The formation of irregular type of pores seemed to be attributed to spark discharge phenomena which heavily occurred during increasing the anodic voltage. The pore diameter and the cell size increased, and the number of cells per unit area decreased with the increasing time. From the XPS results, it was shown that component elements of the electrolytes, P and S, existed in the chemical states of $PO_4^{-3}$ , $P_2$$O_{5}$, $SO_4^{-2}$ , $SO_3^{-2}$ , P, S, etc., which were penetrated from the electrolytes into the oxide layer during anodization.

• Journal of the Korean Ceramic Society
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• v.47 no.3
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• pp.210-215
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• 2010

In this study, an expanded graphite-titanium oxide composite is developed from expanded graphite (EG) and titanium n-butoxide (TNB). EG is synthesized by chemical intercalation of natural graphite (NG) and rapid expansion at high temperature. TNB is used as the titanium source. The performances of the prepared EG-$TiO_2$ composite are characterized by BET surface area measurements, scan electron microscope (SEM), X-ray diffraction patterns (XRD) and energy dispersive X-ray analysis (EDX). The catalytic activities of the EG-$TiO_2$ composite are investigated by analysis of the degradation of methylene blue (MB) in aqueous solution under irradiation of UV light. Compared with the pristine $TiO_2$ and activity carbon-$TiO_2$ (AC-$TiO_2$) composite, the EG-$TiO_2$ composite shows very high efficiency against MB solution, and the EG could improve the photocatalytic effect of $TiO_2$ in the MB degradation reaction under the irradiation of UV light.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.711-716
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• 2003

Gate length, height, and silicide thickness have all been shrinking linearly as device density has progressively increased over the years. We investigated the effect of the cobalt diffusion during the silicide formation process on the 60$\AA$-thick gate oxide lying underneath the Ti/Co and Co/Ti bilayers. We prepared four different cobalt silicides, which have similar sheet resistance, made from the film structure of Co/Ti(interlayer), and Ti(capping layer)/Co, and peformed the current-voltage, time-to-break down, and capacitance-voltage measurements. Our result revealed that the cobalt silicide process without the Ti capping layer allowed cobalt atoms to diffuse into the upper interface of gate oxides. We propose that 100$\AA$-thick titanium interlayer may lessen the diffusion of cobalt to gate oxides in 1500-$\AA$ height polysilicon gates.