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박동철
- Journal of the Korean Institute of Telematics and Electronics
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- v.16 no.2
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- pp.15-18
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- 1979
Deposited film of a transition metal, Ti was diffused into LiNbO3 crystals to form integrated optical waveguides. By suppressing L O out -diffusion, single-mode waveguides could be constructed. Measurements on characteristics were performed by using the prise coupling technique and a He-Ne laser. ( λ = 0.6328 $\mu$m)
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김명호;박주석;변재동
- Journal of the Korean Ceramic Society
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- v.28 no.12
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- pp.989-995
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- 1991
By means of the secondary ion mass spectrometer, the tracer diffusion of oxygen in rutile single crystal was measured as function of temperature and oxygen partial pressure. The tracer diffusivity was determined from the depth profile of 18O. The Po2 dependence of D suggests that the dominant defects in TiO2-y are oxygen vacancies (V{{{{ { ‥} atop { o} }}) and interstitial titanium ions (Ti{{{{ {‥‥} atop {i} }}). The doubly ionized oxygen vacancies are prominent at low temperature and Po2. However, the tetravalent interstitial titanium ions predominate at teperature above 120$0^{\circ}C$.
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O, Jun-Hwan;Lee, Jong-Mu
- Korean Journal of Materials Research
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- v.11 no.3
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- pp.215-220
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- 2001
Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.
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