• The Journal of Advanced Prosthodontics
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• v.1 no.1
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• pp.41-46
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• 2009

STATEMENT OF PROBLEM. The poor chemical bonding of a denture base resin to cast titanium framework often introduces adhesive failure and increases microleakage. PURPOSE. This study evaluated the shear bond strengths of a heat cure denture base resin to commercially pure titanium, Ti-6Al-4V alloy and a cobalt-chromium alloy using two adhesive primers. MATERIAL AND MATHODS. Disks of commercially pure titanium, Ti-6Al-4V alloy and a cobalt-chromium alloy were cast. Specimens without the primer were also prepared and used as the controls. The shear bond strengths were measured on a screw-driven universal testing machine. RESULTS. The primers significantly(P < .05) improved the shear bond strengths of the heat cure resin to all metals. However, the specimens primed with the Alloy $primer^{(R)}$(MDP monomer) showed higher bond strength than those primed with the MR $bond^{(R)}$(MAC-10 monomer) on titanium. Only adhesive failure was observed at the metal-resin interface in the non-primed specimens, while the primed specimens showed mixed failure of adhesive and cohesive failure. CONCLUSIONS. The use of appropriate adhesive metal primers makes it possible not only to eliminate the need for surface preparation of the metal framework before applying the heat cure resins, but also reduce the need for retentive devices on the metal substructure. In particular, the Alloy $primer^{(R)}$, which contains the phosphoric acid monomer, MDP, might be clinically more acceptable for bonding a heat cure resin to titanium than a MR $bond^{(R)}$, which contains the carboxylic acid monomer, MAC-10.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.202-208
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• 2015

Alumina dispersion strengthening copper(ADSC) alloy has great potential for use in many industrial applications such as contact supports, frictional break parts, electrode materials for lead wires, and spot welding with relatively high strength and good conductivity. In this study, we investigated the oxidation behavior of ADSC alloys. These alloys were fabricated in forms of plate and round type samples by surface oxidation reaction using Cu-0.8Al, Cu-0.4Al-0.4Ti, and Cu-0.6Al-0.4Ti(wt%) alloys. The alloys were oxidized at $980^{\circ}C$ for 1 h, 2 h, and 4 h in ambient atmosphere. The microstructure was observed with an optical microscope(OM) and a scanning electron microscope(SEM) equipped with energy-dispersive X-ray spectroscopy(EDS). Characterization of alumina was carried out using a 200 kV field-emission transmission electron microscope(TEM). As a result, various oxides including Ti were formed in the oxidation layer, in addition to ${\gamma}$-alumina. The thickness of the oxidation layer increased with Ti addition to the Cu-Al alloy and with the oxidation time. The corrected diffusion equation for the plate and round type samples showed different oxidation layer thickness under the same conditions. Diffusion length of the round type specimen had a value higher than that of its plate counterpart because the oxygen concentration per unit area of the round type specimen was higher than that of the plate type specimen at the same diffusion depth.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.11
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• pp.1139-1145
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• 2011

An automated anastomotic ring-pin system consisting of both the anastomotic ring-pin system and the coupler device has eliminated the drawbacks of the suture method. High density polyethylene (HDPE), a material with outstanding biocompatibility and injection molding capability, was used in the ring. SUS316 stainless steel, Ti-6Al-4Nb, Ti-6Al-4V, and unalloyed titanium were used in FEM simulations of the micropin. The authors categorized the microvascular anastomotic ring micropins into short neck (SN) and long neck (LN) groups in order to evaluate the effect of the micropin's fillet radius and neck length on the von Mises stress. The micropins were further divided into those with and without fillet. On the basis of the fillet radius rate (FRR), which represents the rate of change in the von Mises stress with respect to the availability and shape of the fillet, and the neck length rate (NLR), which represents the rate of change in the von Mises stress with respect to changes in the length of the neck within the fillet shape, it can be concluded that the SN-3 neck design is the most stable.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.473-478
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• 2001

Ferroelectric P $b_{0.99}$［(Z $r_{0}$ 6S $n_{0.4}$)/0.9/ $Ti_{0.1}$］0.98/N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on L $a_{0.5}$S $r_{0.5}$Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films annealed at various temperature and time were investigated. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 %..10 %......

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.245-248
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• 2003

Randomly oriented ferroelectric cerium-substituted $Bi_4Ti_3O_{12}$ thin films have been prepared by using metal-organic decomposition method. The layered perovskite structure was investigated using annealing for 1 h in the temperature range from $550\;{\sim}\;750\;^{\circ}C$. The structure and morphology of the films were characterized using X-ray diffraction and scanning electron microscopy The $Bi_{3.4}Ce_{0.6}Ti_3O_{12}$ (BCeT) thin films showed a perovskite phase and dense microstructure. The grain size of the BCeT films increasedwith increasing annealing temperature. The hysteresis loops of the films were well defined at temperatures above $600\;^{\circ}C$. The 200-nm-thick BCeT thin films annealed at $650\;^{\circ}C$ showed a large remanent polarization (2Pr) of 59.3 ${\mu}C/cm^2$ at an applied voltage of 10 V. The BCeT thin films showed good fatigue endurance up to $5\;{\times}\;10^9$ bipolar cycling at 5 V and 100 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.996-1002
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• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

• Journal of the Korean Electrochemical Society
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• v.24 no.4
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• pp.100-105
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• 2021

Recently, all-solid-state batteries have attracted much attention to improve safety of rechargeable lithium batteries, but the solid-state batteries of conductive ceramics or solid polymer electrolytes show poor electrochemical properties because of several problems such as high interfacial resistance and undesired reactions. To solve the problems of the reported all-solid-state batteries, a hybrid solid electrolyte is suggested, in this study, NASICON-type nanoparticle Li_1.5Al_0.5Ti_1.5P₃O₁₂ (LATP) conductive ceramic, PVdF-HFP, and a carbonate-based liquid electrolyte were composited to prepare a quasi-solid electrolyte. The hybrid solid electrolyte has a high voltage stability of 5.6 V and shows an suppress effect of lithium dendrite growth in the stripping-plating test. The LiNi_0.83Co_0.11Mn_0.06O₂ (NCM811)-based battery with the hybrid solid electrolyte exhibits a high discharge capacity of 241.5 mAh/g at a high charge-cut-off voltage of 4.8V and stable electrochemical reaction. The NCM811-based battery also shows 139.4 mAh/g discharge capacity without short circuit or explosion at 90℃. Therefore, the LATP-based hybrid solid electrolyte can be an effective solution to improve the safety and electrochemical properties of rechargeable lithium batteries.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.218-218
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• 2012

Nanocrystalline $SnO_2$ colloids are synthesized by hydrolysis of $SnCl_4{\cdot}5H_2O$ in aqueous ammonia solution. The synthesized $SnO_2$ nanoparticles with ca. 15 nm in diameter are coated on a fluorinedoped thin oxide (FTO) conductive substrate and heated at $550^{\circ}C$. The annealed $SnO_2$ film is treated with aqueous $TiCl_4$ solution, which is sensitzied with MK-2 dye (2-cyano-3-[5'''-(9-ethyl- 9H-carbazol-3-yl)-3',3'',3''',4-tetra-n-hexyl-[2,2',5',2'',5'',2''']-quater thiophen-5-yl]). Compared to bare $SnO_2$ film, the conversion efficiency is significantly improved from 0.22% to 3.13% after surface treatment of $SnO_2$ with $TiCl_4$, which is mainly due to the large increases in both photocurrent density from 1.33 to $9.46mA/cm^2$ and voltage from 315 to 634 mV. It is noted that little change in the amount of the adsorbed dye is detected from 1.21 for the bare $SnO_2$ to $1.28{\mu}mol/cm^2$ for the $TiCl_{4-}$ treated $SnO_2$. This indicates that the photocurrent density increased by more than 6 times is not closely related to the dye loading concentration. From the photocurrent and voltage transient spectroscopic studies, electron life time increases by about 13 order of magnitude, whereas electron diffusion coefficient decreases by about 3.6 times after $TiCl_4$ treatment. Slow electron diffusion rate offers sufficient time for regeneration kinetics. As a result, charge collection efficiency of about 40% before $TiCl_4$ treatment is improved to 95% after $TiCl_4$ treatment. The large increase in voltage is due to the significant increase in electron life time, associated with upward shift of fermi energy.

• Electrical & Electronic Materials
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• v.3 no.4
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• pp.339-346
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• 1990

미소변위소자에 적합한 전왜세라믹스를 제조하기 위하여 0.85Pb(Zn$_{1}$3-x/MgxNb$_{2}$3/) $O_{3}$-0.10BaTi $O_{3}$-0.05PbTi $O_{3}$조성으로 Mg(mol%)를 변화시키면서 시편을 제조하고 구조적, 유전적, 전기적 특성 및 온도 안정성을 관찰하였다. 큐리온도는 Mg(mol%)가 증가함에 따라 감소하였고 Mg(mol%)가 0.15일 때 유전상수가 가장 높았으며 완만도는 -3.9, 산만도.DELTA.Tc는 21로 가장 컸다. 전계에 따른 유전상수는 감소하였고 Mg(mol%)가 증가할수록 압전정수 d$_{31}$은 감소하였으나 0.05, 0.10, 0.15일 때는 거의 일정하였다. Mg(mol%)가 0.15까지 증가함에 따라 전왜정수 Q$_{31}$은 감소하였고 그 이상에서는 Mg(mol%)가 1/3일때 가장 컸으며 ES-1시편에서의 AC 60(Hz), 11(kV/cm) 전계(electric field)에 의한 왜형을 253*$10^{-6}$을 나타냈다.