• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Corrosion Science and Technology
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• 제8권2호
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• pp.62-67
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• 2009

Ti and Ti-alloys have good biocompatibility, appropriate mechanical properties and excellent corrosion resistance. However, the widely used Ti-6Al-4V is found to release toxic ions (Al and V) into the body, leading to undesirable long-term effects. Ti-6Al-4V has much higher elastic modulus (100 GPa) than cortical bone (20 GPa). Therefore, titanium alloys with low elastic modulus have been developed as biomaterials to minimize stress shielding. The electrochemical behavior of surface-modified and MC3T3-E1 cell-cultured Ti-30(Nb,Ta) alloys with low elastic modulus have been investigated using various electrochemical methods. Surfaces of test samples were treated as follows: $0.3{\mu}m$ polished; $25{\mu}m$, $50{\mu}m$ and $125{\mu}m$ sandblasted. Specimen surfaces were cultured with MC3T3-E1 cells for 2 days. Average surface roughness ($R_a$) and morphology of specimens were determined using a surface profilometer, OM, and FE-SEM. Corrosion behavior was investigated using a potentiostat(EG&G PARSTAT 2273), and electrochemical impedance spectroscopy was performed (10 mHz to 100 kHz) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The microstructures of the Ti-30(Ta,Nb) alloys had a needle-like appearance. The $R_a$ of polished Ti-30Ta and Ti-30Nb alloys was lower than that of the sandblasted Ti alloy. Cultured cells displayed round shapes. For polished alloy samples, cells were well-cultured on all surfaces compared to sandblasted alloy samples. In sandblasted and cell-cultured Ti-30(Nb,Ta) alloy, the pitting potential decreased and passive current density increased as $R_a$ increased. Anodic polarization curves of cell-cultured Ti alloys showed unstable behavior in the passive region compared to non-cell-cultured alloys. From impedance tests of sandblasted and cell-cultured alloys, the polarization resistance decreased as $R_a$ increased, whereas, $R_a$ for cell-cultured Ti alloys increased compared to non-cell-cultured Ti alloys.

• 한국재료학회지
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• 제18권4호
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• 한국결정학회지
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• 제10권1호
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• pp.51-55
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• 1999

Cesium titanium(III) pyrophosphate 화합물인 CsTiP2O7을 합성하고 X절 회절법을 이용하여 그 결정구조를 해석하였다. 이물질은 단사정계의 P21/a 공간군으로 결정화되었고 a=8.369(2) , b=10.208(2) , c=7.752(1) , β=104.77(2)o, V=640.4(2) 3, and Z=4이다. 이 물질의 구조는 모서리를 공유하고 있는 TiO6 팔면체와 P2O7 pyrophosphate group들로 구성된 framework로 구성되어 있으며 그 결과로 형성된 tunnel 안에는 Cs+이온이 존재한다. CsTiP2O7은 ATiP2O7(A=K, Rb)와 KAIP2O7 그리고 AMoP2O7(A=K, Rb, Cs)등 다른 +3금속 pyrophosphate들로 유사한 구조를 가지고 있다. 이 물질은 [Cs+][Ti3+][P2O74-]의 식으로 표현할 수 있다.

• 공업화학
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• 제34권6호
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• pp.584-589
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• 2023

지지체 TiO₂가 다른 VOx/TiO₂ 촉매들에 대해 특성 분석과 SCR 반응을 수행하였다. Sigma Aldrich 사의 anatase TiO₂와 TiOCl₂와 TTIP를 출발 원료로 제조한 TiO₂를 사용하여 VOx/TiO₂ 촉매를 제조하고, 이를 각각 VS, VC, VP로 표시하였다. VS 시료의 비표면적은 VC 및 VP 시료 대비 1/10 이하로서 바나듐 산화물의 분산성은 상대적으로 낮았다. XPS 분석 결과, 촉매 표면의 흡착 산소의 비는 Ti³⁺가 존재하는 VS와 VP 시료가 VC 시료에 비해 높았다. 또한 VC와 VP시료에서 바나듐은 바나듐 산화물의 분산성과 관련하여 주로 V⁴⁺와 V³⁺ 상태로 존재하였다. 250 ℃ 이하 NH₃-SCR 활성에는 바나듐 산화물의 분산성보다는 흡착 산소 양이 더 기여한 반면, 300 ℃ 이상 활성에는 바나듐 산화물의 분산성이 더 기여하는 것으로 판단되었다. 촉매들의 fast SCR 활성은 3 시료 모두 NO₂/NOx = 0.5에서 가장 높았으며, VS < VC < VP 시료 순으로 나타났다. 빠른 NH₃-SCR 촉매 활성에는 촉매의 바나듐 산화물의 분산성이 영향을 크게 미친다고 판단되었다.

• Applied Microscopy
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• 제29권4호
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• pp.471-477
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• 1999

Pyrochlore 구조를 갖는 $Lu_2Ti_2O_7$와 그와 유사한 구조를 갖는 화합물, $In_2(Ti_{1.7}Zn_{0.3})O_{6.7}$와 $In_2(Ti_{1.7}Mg_{0.3})O_{6.7}$에 대한 미세구조 관찰을 200kV에서 작동되는 HRTEM을 이용하여 관찰하였다. 두 화합물에서는 변조구조가 관찰되었으나 pyrochlore구조인 $Lu_2Ti_2O_7$에서는 관찰되지 않았다. 전자회절패턴 분석에서는 변조구조는 incommensurate이고 [220] 방향으로 sublattice의 2.69배로 그 주기가 0.953 nm인 초격자가 관찰되었다. 고분해능 격자상에서는 sublattice의 2배 또는 3배의 초격자들로 조합되며 평균적으로 2.7배로 그 주기가 0.967 nm가 되는 초격자상이 관찰되었다. 두 화합물의 결정구조는 입방정 pyrochlore 구조와 아주 유사하나 입방정 축은 $90^{\circ}$에서 약간 벗어난 구조를 갖는다. 변조구조는 전자빔에 의하여 점차적으로 변조구조가 없는 구조로 비가역적으로 변환된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D＊) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• 한국표면공학회지
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• 제29권5호
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• pp.525-531
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• 1996

(Ti1-xAlx)N films were deposited on high speed steel and silicon substrates by reactive sputtering in mixed $Ar-N_2$ discharges. Crystalline phases and microhardness of ($Ti_1_xAl_x$)N films were investigated with variation of the film composition and substrate RF bias voltage. With Al content x of about 0.6, crystalline phase of ( $Ti_1_xAl_x$N films was changed from single-phase NaCl structure to two phase mixture of NaCl and wurtzite structures: Microhardness of ($Ti_1_xAl_x$)N films was largely improved by applying RF bias voltage above 50 V during deposition. Hardness of ($Ti_1_xAl_x$)N films reached a maximum value for Al content x of about 0.4, and 1900 kg/$mm^2$ was obtained for 1$\mu m$-thick ($Ti_{0.6}Al_{0.4}$)N films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• 한국정보통신학회논문지
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• 제9권3호
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• pp.576-581
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• 2005

강유전체$(SrTiO_3)$ 박막을 게이트 절연층으로 하여 수소화 된 비정질 실리콘 박막 트랜지스터를 유리 기판 위에 제조하였다. 강유전체는 기존의 $SiO_2,\;SiN$ 등과 같은 게이트 절연체에 비하여 유전특성이 매우 뛰어나 TFT의 ON 전류를 증가시키고 문턱전압을 낮추며 항복특성을 개선하여 준다. PECVD에 의하여 증착된 a-Si:H는 FTIR 측정 결과 $2,000cm^{-1}$과 $876cm^{-1}$에서 흡수 밴드가 나타났으며, $2,000cm^{-1}$과 $635cm^{-1}$은 $SiH_1$의 stretching과 rocking 모드에 기인한 것이며 $876cm^{-1}$의 weak 밴드는 $SiH_2$ vibration 모드에 의한 것이다. a-SiN:H는 optical bandgap이 2.61 eV이고 굴절률은 $1.8\~2.0$, 저항률은 $10^{11}\~10^{15}\Omega-cm$ 정도로 실험 조건에 따라 약간 다르게 나타난다. 강유전체$(SrTiO_3)$ 박막의 유전상수는 $60\~100$ 정도이고 항복전계는 IMV/cm 이상으로 우수한 절연특성을 갖고 있다. 강유전체를 이용한 TFT의 채널 길이는 $8~20{\mu}m$, 채널 넓이는 $80~200{\mu}m$로서 드레인 전류가 게이트 전압 20V에서 $3.4{\mu}A$이고 $I_{on}/I_{off}$ 비는 $10^5\~10^8,\;V_{th}$는 $4\~5\;volts$이다.