• Journal of the Korean Electrochemical Society
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• v.14 no.1
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• pp.16-21
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• 2011

$Li_4Sn_xTi_{5-x}O_{12}$ was manufactured by high energy ball milling (HEBM) and used as an anode material for lithium ion battery. Various amount of $SnO_2$was added to $Li_4Ti_5O_{12}$ and heated at different temperatures. The purpose of this research was to see the effect of $SnO_2$ addition into $Li_4Ti_5O_{12}$. Manufactured samples were analyzed by TGA, XRD, SEM, PSA. Battery cycler was used to test the charge/discharge properties of active materials. Heat treatment temperature of $800^{\circ}C$ was needed to make a stable structure of $Li_4Sn_xTi_{5-x}O_{12}$ and the particle size distribution was $0.2{\sim}0.6\;{\mu}m$. Charge/discharge process was repeated for 50 cycles at room temperature. The initial capacity was 168mAh/g and the voltage plateau was observed at 1.55V(Li/$Li^+$).

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.385-389
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• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• Journal of the Korean Chemical Society
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• v.25 no.4
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• pp.236-245
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• 1981

The electrical conductivities of oxidized pure and Ni-doped $SrTiO_3$ single crystals were measured as a function of the oxygen partial pressure($Po_2$) at temperature from 700 to $1200^{\circ}C$ and $Po_2$ of $10^{-8}$ to $10^{-1}$ atm. Plots of log ${\sigma}$ vs. 1/T at constant $Po_2$ were found to be linear, and the activation energies obtained from the slopes of these plots have an average value of 1.34 eV for oxidized pure and 1.06 eV for oxidized Ni-doped $SrTiO_3$ single crystals at $Po_2$'s between $10^{-8}$ to $10^{-1}$ atm. The log ${\sigma}$ vs. log $Po_2$ curves at constant temperature were found to be linear with an average slope of ${\frac{-1}{5.6}}\;{\sim}\;{\frac{-1}{6.2}}$ in the $Po_2$ ranges. From the agreement between experimental and theoretically predicted values for the electrical conductivity dependences on $Po_2$, an oxygen vacancy defect model was found applicable to oxidized pure and Ni-doped $SrTiO_3$ single crystals over the temperature range, 700~$1200^{\circ}C$. Conduction mechanisms were proposed to explain the dependences of electrical conductivity on temperature and $Po_2$.

• 연구논문집
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• s.29
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• pp.163-171
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• 1999

A new titanium alloy system. Ti-xFe-ySi (x,y=0-4 wt%). was designed and characterized with the point at low cost and high strength for casting applications. Fe improved room and elevated temperature mechanical properties owing to solid solution hardening and beta phase stabilization. Si yielded titanium silicides and Si addition over 1 wt% resulted in poor ductility due to coarse silicide chains at prior beta boundaries. The optimum composition was found to be Ti-4Fe-(0.5-1)Si in the viewpoint of tensile strength and ductility which are comparable to the Ti-6Al-4V. The metal-mould reaction was also examined for Ti-xFe and Ti-xSi binary alloy system. The thickness of surface reaction layer w as not affected significantly with Fe content, while it was decreased with Si content. In the Ti-4Si alloy, no reaction layer was found. The depth of surface hardening layer was about $200\mum$ regardless of the mould materials.

• Journal of Powder Materials
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• v.21 no.4
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• pp.277-285
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• 2014

The effects of processing parameters on the flow behavior and microstructures were investigated in hot compression of powder metallurgy (P/M) Ti-6Al-4V alloy. The alloy was fabricated by a blended elemental (B/E) approach and it exhibited lamellar ${\alpha}+{\beta}$ microstructure. The hot compression tests were performed in the range of temperature $800-1000^{\circ}C$ with $50^{\circ}C$ intervals, strain rate $10^{-4}-10s^{-1}$, and strain up to 0.5. At $800-950^{\circ}C$, continuous flow softening after a peak stress was observed with strain rates lower than $0.1s^{-1}$. At strain rates higher than $1s^{-1}$, rapid drop in flow stress with strain hardening or broad oscillations was recorded. The processing map of P/M Ti-6Al-4V was designed based on the compression test and revealed the peak efficiency at $850^{\circ}C$ and $0.001s^{-1}$. As the processing temperature increased, the volume fraction of ${\beta}$ phase was increased. In addition, below $950^{\circ}C$, the globularization of phase at the slower strain rate and kinking microstructures were found. Based on these data, the preferred working condition of the alloy may be in the range of $850-950^{\circ}C$ and strain rate of $0.001-0.01s^{-1}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.6
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• pp.130-136
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• 2002

A novel ozonizer has been developed using a high frequency surface discharge and a high purity Ti-Si-Al ceramic catalyst as its dielectric component. A cylindrical thin compound ceramic catalyst in reactor is adhered to inside of the film-like outside electrode. And, when experiment condition are oxygen gas temperature of 20 ［$^{\circ}C$］, inner reactor pressure of 1.6 atm 600［Hz］ and flow late of 2［l/min］. the ozonizer can easily produce ozone concentration(50～60［g/㎥］for oxygen) and power efficiency(180［g/kWh］for oxygen) without using a special enrichment means. At 2［l/min］, 20［$^{\circ}C$］, 1.6［atm］, 600［Hz］and 40［W］, the result of simulation to gas temperature of reactor using general code Phoenics, the maximum temperature of reactor was 132［$^{\circ}C$］in reactor. Ant the result electric field simulation of Ti-Si-Al type reactor using general code Flux 2D, maximum electric field was 0.131E.08［V/m］.

• Korean Journal of Metals and Materials
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• v.48 no.6
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• pp.575-580
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• 2010

Effects of the surface modification on the deposition behaviors of apatite crystals in Zr-1Nb plates were studied. Zr-1Nb alloy plates were polished with abrasive papers to have different roughness and some of them were treated in NaOH or coated with collagen before deposition of apatites in the simulated body fluid (SBF). The weight gain due to the deposition of apatite crystals increased as the surface roughness increased in Zr-1Nb. The size of granular apatite crystals were found to be smaller in Zr-1Nb roughened by $162{\mu}m$ abrasive paper than in Zr-1Nb roughened by $8.4{\mu}m$ paper, suggesting the nucleation rate increased with increase of surface roughness. After, 10 days immersion in a SBF, NaOH-treated Zr-1Nb was completely coated with apatite with the deposited apatite weight comparable to that in Ti-6Al-4V. The deposition rate of Zr-1Nb was not appreciably influenced by NaOH treatment unlike the significant influence of NaOHtreatment on the deposition rate of apatite in Ti-6Al-4V. One significant observation in this study is an appreciable increase of the apatite deposition rate after collagen coating both on Zr-1Nb and Ti-6Al-4V plate, which may be caused by the interaction between collagen and $Ca^{+2}$ ions.

• Journal of Technologic Dentistry
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• v.25 no.1
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• pp.81-87
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• 2003

Ti-20%Zr-X%Cr(X=0,5) based alloys not containing hamful Al and V were newly designed in order to reveal their possibility for dental casting alloys, and melted in argon-arc casting machine. The mechanical properties were evaluated by using universal testing machine. The tensile strength and %elongaton of the alloys markedly increased with Cr content. The Ti-20%Zr-5%Cr alloy showed a similar tendency with Ti-6%Al-4%V alloy in tensile strength, but surpassed in %elongation. From these results, it was concluded that new alloys for successful dental casting materials should be designed as Ti-Zr-Cr based alloys.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.