• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.802-807
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• 2001

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_{3}$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at woom temperature is close to stoichiometry(1.102 in A/B ratio). The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$]. The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequencey.cey.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.6
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• pp.787-794
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• 2007

Statement of problem. Surface microgrooves on Ti substrata have been shown to alter the expression of genes responsible for various biological activities of cultured fibroblasts. However, their effect on enhancing cell proliferation is not yet clear. Purpose. The purpose of this study was to determine the dimension of surface microgrooves on Ti substrata that enhances proliferation and alters gene expression of cultured human gingival fibroblasts. Material and methods. Commercially pure Ti discs with surface microgrooves of monotonous $3.5{\mu}m$ in depth and respective 15 and $30{\mu}m$ in width were fabricated using photolithography and used as the culture substrata in the two experimental groups in this study (TiD15 and TiD30), whereas the smooth Ti was used as the control substrata (smooth Ti group). Human gingival fibroblasts were cultured on the three groups of titanium substrata and the proliferation, DNA synthesis, and gene expression of theses cells were analyzed and compared between all groups using XTT assay, BrdU assay, and reverse transcriptase-polymerase chain reaction (RT-PCR), respectively. Results. From the XTT assay at 48 h incubation, the proliferation of human gingival fibroblasts in TiD30 was significantly enhanced compared to that in smooth Ti and TiD15. The results from the BrdU assay showed that, at 24 h incubation, the DNA synthesis was significantly enhanced in TiD30 compared to that in smooth Ti. In RT-PCR, increase in the expression of PCR transcripts of fibronectin, CDK6, $p21^{cip1}$ genes was noted at 48h incubation. Conclusion. Surface microgrooves $30{\mu}m$ in width and $3.5{\mu}m$ in depth on Ti substrata enhance proliferation and alter gene expression of cultured human gingival fibroblasts.

• Electrical & Electronic Materials
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• v.5 no.4
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• pp.421-429
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• 1992

본 연구에서는 (Sr.Pb)TiO$_{3}$계 세라믹을 고압용 세라믹 캐패시터로 응용하기 위하여 일반적인 세라믹 소성법으로 제작하였으며 Bi$_{2}$O$_{3}$. 3TiO$_{2}$의 첨가량에 따른 전기전도 및 DC 절연파괴 특성을 조사하였다. 전도전류는 측정온도의 상승과 Bi$_{2}$O$_{3}$.3TiO$_{2}$의 첨가량이 증가함에 따라 상승하였다. 실온에서 전도전류는 전계에 따라 3영역으로 나누어졌다. 전계 15[kV/cm]이하의 영역에서는 오음의 법칙이 성립하는 이온전도가 나타났으며 전계 15[kV/cm]~40[kV/cm]인 영역에서는 전계에 강요된 강유전성 분극의 반전게에 기인하여 전류의 포화현상이 나타났다. 전계 40[kV/cm] 이상의 영역에서는 공간전하제한전류에 관련된 차일드법칙이 성립하였다. DC 절연파괴 강도는 측정온도의 상승과 Bi$_{2}$O$_{3}$.3TiO$_{2}$의 첨가량이 증가함에 따라 감소하였다. 온도 100[.deg.C] 이하에서는 전자적파괴가 일어났으며 100[.deg.C] 이상에서는 주울열과 유전손실에 의한 열적파괴가 나타났다.

• Journal of the Korea Institute of Military Science and Technology
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• v.2 no.1
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• pp.183-193
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• 1999

Semiconducting (Sr0.85Ca0.15)TiO3 ceramics were prepared by conventional powder synthesis techniques, and then alkaline metallic cations were diffused into the ceramic bodies. The threshold voltage of the ceramics increases with increasing diffusion time and the amount of diffused materials. The ceramics had boundary potential heights of 0.01 ~ 2.89 eV, while their boundary resistance ranged from 2.2 $M{\Omega}$ to 120.4 $M{\Omega}$. Such electrical characteristics of the boundaries were correlated with the boundary structure of the ceramics obtained by transmission electron microscopy.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.798-807
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• 1994

The increase in the resistance of $BaTio_{3}$ with addition of Ca is attributed to the formation ofthe acceptor impurity by $CaCa^{2+}$" which substitutes Ti4+. However, some authors suggested that $Ca^{2+}$ can not substitute $Ti^{4+}$ because of its larger ionic radius. In this work, the existence of acceptor by Ca hasbeen studied through the high temperature equilibrium electrical conductivity of $BaTiO_{3}$ codoped with Caand Nb, where Ba/(Ti+Ca+Nb) was kept equal to unity. It was measured at $1000^{\circ}C$, and the oxygenpartial pressure was controlled between $10^{-15}$ ~ 1 atm. Changing the amount of added Ca and Nbresulted in the compensation effect between donor and acceptor, i.e., Nb was compensated by the acceptor.And through the defect chemical interpretation of the measured data, it was concluded that Ti canbe substitued with Ca. The existence of such acceptor was reaffirmated by ICTS(Isotherma1 CapacitanceTransient Spectroscopy) measurements.oscopy) measurements.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.44-49
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• 1999

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.111-120
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• 1998

In this paper, the $(SrPb)(CaMg)TiO_3$ ceramics with paraelectric properties were fabricated by the mixed oxide method. It was investigated that which the variation of contents of $Bi_2O_3{\cdot}3TiO_2$ effects on structural, dielectrical and electrical properties of specimens. As a result, the grain size were grown with increasing the contents of $Bi_2O_3{\cdot}3TiO_2$. The relative dielectric constants were increased up to 4[mol%] of $Bi_2O_3{\cdot}3TiO_2$, and decreased more or less at a low temperature in the specimens which had more than. But the temperature coefficient. of capacitance were showed ${\pm}25$[%]. The dielectric loss were less than 0.05 in all specimens which had more than 4[mol%] of $Bi_2O_3{\cdot}3TiO_2$. In order to investigate the behavior of charged particles, the characteristics of electrical conduction were measured. As a result, the conduction current was divided into the three steps as a function of DC electric field. The first step was Ohmic region due to ionic conduction, below 15[kV/cm]. The second step was showed a saturation which seems to be related to a depolarizing field occuring in field-enforced ferroelectric phase, between 15[kV/cm] and 40[kV/cm]. The third step was attributed to Child's law related to space charge which injected from electrode, above 40[kV/cm].

• Journal of Environmental Science International
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• v.15 no.3
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• pp.221-227
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• 2006

Oxidative TCE decomposition over $TiO_2$-supported single and complex metal oxide catalysts has been conducted using a continuous flow type fixed-bed reactor system. Different types of commercial $TiO_2$ were used for obtaining the supported catalysts via an incipient wetness technique. Among a variety of titanias and metal oxides used, a DT51D $TiO_2\;and\;CrO_x$ would be the respective promising support and active ingredient for the oxidative TCE decomposition. The $TiO_2-based\;CrO_x$ catalyst gave a significant dependence of the catalytic activity in TCE oxidation reaction on the metal loadings. The use of high $CrO_x$ contents for preparing $CrO_x/TiO_2$ catalysts might produce $Cr_2O_3$ crystallites on the surface of $TiO_2$, thereby decreasing catalytic performance in the oxidative decomposition at low reaction temperatures. Supported $CrO_x$-based bimetallic oxide systems offered a very useful approach to lower the $CrO_x$ amounts without any loss in their catalytic activity for the catalytic TCE oxidation and to minimize the formation of Cl-containing organic products in the course of the catalytic reaction.