• Korean Journal of Materials Research
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• v.15 no.5
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• pp.306-312
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• 2005

The hydrogen sorption properties of $Ti_{0.3}Zr_{0.2}V_{0.5}$ NEC(non-evaporable getter) alloy and its hydrides were evaluated at room temperature. The alloy and hydride powders were prepared by the Hydride-DeHydride(HDH) method. The hydrogen sorption speed of $Ti_{0.3}Zr_{0.2}V_{0.5}$ alloy was measured to increase with the amounts of hydride phase in the getter. The hydrogen sorption speeds of $Ti_{0.3}Zr_{0.2}V_{0.5},\;(Ti_{0.3}Zr_{0.2}V_{0.5})H_{1.52},\;and\;(Ti_{0.3}Zr_{0.2}V_{0.5})H_{1.94}$ were 2.22, 3.14 and 5.08 liter/sec, respectively. The unexpected enhancement of hydrogen sorption speed with the presence of the hydride phase is considered to be due to the pre-saturation of hydrogen trap sites which can retard the diffusion of hydrogen in the alloy.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.185-187
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• 1993

0.15BaO-$0.15Sm_2O_3-0.7TiO_2$, ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering temperature and annealing time. In the specimen sintered at 1350[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency had a good values of 80.19, 2006 (at 4.6851[GHz]), -27.54[ppm/$^{\circ}C$], respectively. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. Temperature coefficient of resonant frequency was minimum value (-1.28[ppm/$^{\circ}C$]) at 4 [hr] annealed.

• Corrosion Science and Technology
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• v.15 no.3
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• pp.129-134
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• 2016

The effects of Ti on the high temperature oxidation of Ni-based superalloys were investigated by cyclic oxidation at $850^{\circ}C$ and $1000^{\circ}C$. The oxide scale formed at $850^{\circ}C$ consists of $Cr_2O_3$, $Al_2O_3$, and $NiCr_2O_4$ layers, while a continuous $Al_2O_3$ layer was formed at $1000^{\circ}C$. The oxidation rate of the alloy with higher Ti content was higher than the alloy with less Ti content at $850^{\circ}C$, possibly due to the increase in the metal vacancy concentration in the $Cr_2O_3$ layer involved by incorporation of $Ti^{4+}$. However, Ti improved the oxidation resistance of the superalloy at $1000^{\circ}C$ by reducing oxygen vacancy concentration in $Al_2O_3$ layer.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.249-257
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• 1989

Dielectric properties and the stability of the perovskite phase in the Pb(Mg1/3Nb2/3)O3 system have been investigated as a function of amount of BaTiO3 and firing temperature. In the specimens fired at 120$0^{\circ}C$, the pyrochlore phase was eliminated by the addition of 10-15m/o BaTiO3 and also the dielectric constant increased. However, the dielectric constant decreased with further addition of BaTiO3 even though no pyrochlore phase was found to be present. The reducing tendency of the pyrochlore phase decreased with lowering the firing temperature in the system of Pb(Mg1/3Nb2/3)O3 with BaTiO3. Dielectric properties in PMN ceramics were affected by the character of the BaTiO3 rather than the pyrochlore phase.

• Tribology and Lubricants
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• v.4 no.2
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.8-11
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• 1988

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})0_3-BaTiO_3PbTiO_3(0.05{\leq}x{\leq}0.20, 0.05{\leq}y{\leq}0.15$) ternary compound ceramics were fabricated by the mixed oxide method. The dielectric properties with temperature and frequency of the specimens were investigated. Relative dielectric constants of the specimens were increased with $BaTiO_3$ contents. Increasing the $BaTiO_3$contents, the variation in the relative dielectric constant with frequency, the temperature coefficient of capacitance (TCC) and the dielectric loss were decreased.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.287-293
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• 1998

The effects of B2O3 addition on the sintering behavior and th microwave dielectric properties of $(Mg_{0.93}Ca_{0.07})TiO_3$ ceramics were investigated. By addition of $B_2O_3$, increases the density of the ceramics increases and grain growth enhances, It was densified to over 94% of $(Mg_{0.93}Ca_{0.07})TiO_3$ theoretical density by the addition of 0.15-1.0wt% B2O3 and stable microwave dielectric properties observed by the addition of 0.2-0.4wt% $B_2O_3.\;(Mg_{0.93}Ca_{0.07})TiO_3$ ceramics sintered at $1200^{\circ}C$ exhibits maximum dielectric constants of 24-25 quality factor($Q{\times}f$) of more than 70000 and temperature coefficient of resonant frequency of $0\;ppm/^{\circ}C$ by adding of 0.15-0.4wt% $B_2O_3$.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.94-96
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• 2002

The $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature. the grain size was increased. In the case of $0.97MgTiO_3-0.03SrTiO_3$ ceramics with $B_2O_3$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $13.52{\sim}18.13,\;32750{\sim}51736GHz$, $-15.78{\sim}25.64ppm/^{\circ}C$, respectively.

• Clean Technology
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• v.14 no.3
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• pp.171-175
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• 2008

The effect of the addition of $Al^{3+}$ dopant on the electrochemical characteristics of $Li_{4}Ti_{5}O_{12}$ was investigated. $Li_{4}Ti_{5}O_{12}$ is known as a 2ero-strain material, and $Li_{3.95}Al_{0.15}Ti_{4.9}O_{12}$ has been manufactured by solid-state reaction with high energy ball milling (HEBM). The samples were heated at 800, 900 and $1000^{\circ}C$ in electric furnace. The structural and surface structures were measured by XRD (X-ray diffraction) and SEM (scanning electron microscopy). Cut-off voltage of charge/discharge cycles was $1.0{\sim}3.0 V$ to investigate reversible capacity, cycle stability and plateau voltage. The reversible capacity of $Li_{3.95}Al_{0.15}Ti_{4.9}O_{12}$ was 138 mAh/g.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.189-193
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• 1997

(S $r_{0.85}$/C $a_{0.15}$)Ti $O_3$(SCT) thin films at various deposition temperature and rf power were grown by rf magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/ $SiO_2$/Si). The crystallinity of the films increases with increasing deposition temperature. SCT thin film is depend on the surface morphology and crystallinity of Pt films for bottom electrode. Dielectric constant of (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$ thin films deposited on Si wafer substrate are larger with the increase of deposition temperature and gain size.in size.