• Title/Summary/Keyword: Ti-(10%)Ag target

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Surface Characterization According to the Bias Voltage of the TiAgN Coating Film Layer Formed by the AIP Process (AIP법으로 형성된 TiAgN 코팅필름의 바이어스전압에 따른 표면 특성 분석)

  • Baek, Min-Sook;Yoon, Dong-Joo;Kang, Byeong-Mo;Jeong, Woon-Jo;Kim, Byung-Il
    • Korean Journal of Materials Research
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    • v.25 no.5
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    • pp.253-257
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    • 2015
  • The implanting of metal products is performed with numerous surface treatments because of toxicity and adhesion. Recently, the surface modification of metal products has been actively studied by coating the surface of the TiC or TiN film. We prepared a Ti(10%)Ag Target which may be used in dental oral material by, using the AIP(arc ion plating) system TiAgN coating layer that was deposited on Ti g.23. The purpose of this study was to establish the optimal bias voltage conditions of the coated TiAgN layer formed by the AIP process. The TiAgN coatings were prepared with different bias voltage parameters (0V to -500V) to investigate the effect of bias voltage on their mechanical and chemical properties. The SEM(scanning electron microscope), EDS(energy dispersive X-ray spectrometer), XRD(X-ray diffraction), micro-hardness, and potentiodynamic polarization were measured and the surface characteristics of the TiAgN coating layers were evaluated. The TiAgN coating layer had different mechanical characteristics based on the bias voltage, which also showed differences in thickness and composition.

Synthesis and characterization of noble metal coupled N-TiO2 nanoparticles

  • Lee, Kyusang;Moon, Jiyeon;Kim, Seonmin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.374.2-374.2
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    • 2016
  • Volatile organic compounds (VOCs) in the atmosphere are harmful materials which influence indoor air environment and human health. Titanium dioxide ($TiO_2$) is photocatalyst extensively used in degradation of organic compound. To improve the photocatalytic activity in the visible light region, doping with non-metals element or loading noble metals on the surface of $TiO_2$ is generally proposed. In this study, N- doped $TiO_2$ having photocatalytic activity in visible light region was attached noble metal such as Pt, Ag, Pd, Au by coupling method. Catalytic activities of Noble metal coupled $N-TiO_2$ powders were evaluated by the improvement of their photocatalytic activities and the degradation of VOC gas. A UV-Vis spectrophotometer was used to measure the diffuse reflectance spectra of coupled $N-TiO_2$ sample. The photocatlytic activities of as prepared samples were characterized by the decoloration of aqueous MB solution under Xenon light source (UV and visible light). To measure of decomposition VOCs, ethylbenzene was selected for target VOC material and the concentration was monitored under UVLED irradiation in a closed chamber system. Adjusting the initial concentration of 10~12 ppm, to evaluate the removal characteristics by using the coupled $N-TiO_2$.

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Ultra-sensitive Determination of Salinomycin in Serum Using ICP-MS with Nanoparticles

  • Cho, H.K.;Lim, H.B.
    • Bulletin of the Korean Chemical Society
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    • v.35 no.11
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    • pp.3195-3198
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    • 2014
  • An ultra-sensitive detection method for small molecules such as antibiotics was developed using ICP-MS with magnetic and $TiO_2$ nanoparticles. Since most of the antibiotics are too small to employ a sandwich-type extraction through an immunoreaction, a non-specific platform was employed, in which the target was extracted by magnetic separation, followed by tagging with $TiO_2$ nanoparticles of 11.2 nm for ICP-MS measurement. The detection limit for salinomycin obtained from spiked serum samples was $0.4ag\;mL^{-1}$ (${\pm}10.3%$), which was about $1.5{\times}10^6$ times lower than that of LC-MS/MS and about $1.2{\times}10^{11}$ times better than that of ELISA. Such an excellent sensitivity enabled us to study the toxicity of antibiotics exposed to human beings by determining them in serum.

A Preparative Purification Process for Recombinant Hepatitis B Core Antigen Using Online Capture by Expanded Bed Adsorption Followed by Size-Exclusion Chromatography

  • Ho, Chin Woi;Tan, Wen Siang;Chong, Fui Chin;Ling, Tau Chuan;Tey, Beng Ti
    • Journal of Microbiology and Biotechnology
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    • v.19 no.4
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    • pp.416-423
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    • 2009
  • Hepatitis B core antigen(HBcAg) is an important serological marker used in the diagnosis of hepatitis B virus(HBV) infections. In the current study, a fast and efficient preparative purification protocol for truncated HBcAg from Escherichia coli disruptate was developed. The recombinant HBcAg was first captured by anion exchange expanded bed adsorption chromatography integrated with a cell disruption process. This online capture process has shortened the process time and eliminated the "hold-up" period that may be detrimental to the quality of target protein. The eluted product from the expanded bed adsorption chromatography was subsequently purified using size-exclusion chromatography. The results showed that this novel purification protocol achieved a recovery yield of 45.1% with a product purity of 88.2%, which corresponds to a purification factor of 4.5. The recovered HBcAg is still biologically active as shown by ELISA test.

Fabrication and Characteristics of High Brightness White Emission Electroluminescent Device (고휘도 백색방출 전계발광소자의 제작 및 특성)

  • Bae, Seung-Choon;Kim, Jeong-Hwan;Park, Sung-Kun;Kwun, Sung-Yul;Kim, Woo-Hyun;Kim, Ki-Wan
    • Journal of Sensor Science and Technology
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    • v.8 no.1
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    • pp.10-15
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    • 1999
  • White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

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Fabrication and Characteristics of a White Emission Electroluminicent Device (백색 전계발광소자의 제작과 그 특성)

  • Kim, Woo-Hyun;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.10 no.6
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    • pp.295-303
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    • 2001
  • White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

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Non-gaseous Plasma Immersion Ion Implantation and Its Applications

  • Han, Seung-Hee;Kim, En-Kyeom;Park, Won-Woong;Moon, Sun-Woo;Kim, Kyung-Hun;Kim, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.151-151
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    • 2012
  • A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

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