• 전기학회논문지
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• 제62권7호
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• pp.974-979
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• 2013

$TiO_2$ thin films are fabricated using R.F.sputtering method. $TiO_2$ thin films are coated on $Al_2O_3$ substrate printed IDE(interdigitated electrode). Impedance of thin films decreases according to increase relative humidity and it increases according to decrease measuring frequency. When substrate temperature is room temperature, impedance of thin films is from 45.68[MHz] to 37.76[MHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Whereas when substrate temperature is 100[$^{\circ}C$], impedance of thin films is from 692[kHz] to 539[kHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Impedance variation of thin films is bigger in low frequency regions than in high frequency regions. When substrate temperature is 100[$^{\circ}C$], impedance of thin films is lower than that of room temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.162-162
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• 2013

Magnetic properties of 3d transition metals were determined by exchange interaction between magnetic ions that was characterized by the exchange integral. Bulk Mn material is one of transition metals that have been well known as an anti-ferromagnetic material due to an anti-parallel spin with negative exchange integral. Here we report on the MBE growth of Mn on $BaTiO_3$ (001) substrate and induced ferromagnetism. The bcc ${\alpha}$-Mn single crystal film has been grown on $BaTiO_3$ (100) substrate. The XRD and Raman results indicated that the structural phase transitions of $BaTiO_3$ substrate induced a lattice distortion at the interface. Consequently, the grown Mn film exhibits ferromagnetism with strong saturation magnetization of 495 emu/$cm^3$ at 320 K. The electrical resistivity of the Mn film strongly depended on the crystal structure of $BaTiO_3$ substrate.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• 한국표면공학회지
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• 제24권1호
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• pp.8-8
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• 1991

To investigate the effects of substrate on transverse-rupture strength(TRS) and bonding strength between substrate and TiC layer coated by CVD, two kinds of substrate (substrate A:WC-9.5wt%Co-MC*[low C], substrate B: WC-6wt% Co-MC*[high C] were studied in terms of Cobalt and C contents respectively. For preparation of test samples the coating parameters of deposition time, deposition temperature and deposition pressure were varied. The result show that the carbon contents in substrates have greater effects on the TRS of the CVD TiC coated cemented carbide than Co contents in substrates.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.10-10
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• 1996

• 한국표면공학회지
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• 제24권1호
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• pp.16-16
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• 1991

Generally brittle eta phase produced during TiC deposition has a effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η), phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase)have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as follows; 1. by inserting underlayer eta phase were decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest grain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• 한국표면공학회지
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• 제25권1호
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• pp.16-23
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• 1992

Generally brittle eta phase produced during TiC deposition has a bad effect on the TRS (transverse rupture strength ; thoughness). Therefore it is necessary to reduce eta(η) phase for the improvement of tool life. At this experiment some properties (TRS, bonding strength, tool life, eta phase) have been investigated by inserting TiN or TiCN underlayer between TiC layer and substrate. The results obtained were as fellows; 1. by inserting underlayer eta phase was decreased and TRS was increased, but the bonding strength was decreased. 2. the diffusion of W, Co from the substrate was hindered by the underlayer. 3. TiC layer with TiCN underlayer had the finsest gain size. 4. by inserting underlayer (TiCN or TiN) the tool life was improved and especially notch and crater wear resistance was greatly improved.

• 한국표면공학회지
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• 제28권5호
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• pp.267-275
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• 1995

Electron beam can provide convenient way to heat the substrate during Hollow Cathode Discharge (HCD) ion plating of Ti(C, N)films. Densification of columnar structrue is enhanced by longer duration of electron beam heating(EBH). While strong(111) texture is identified always to be formed, the amount of (200) oriented grains which coherently interfaced with carbide particles of the substrate increased with heating(EBH). In turns, these crystallogaphical change lead to the increase of micro hardness and adhesion of coating. Adhesion of Ti(C, N) films increased more dramatically in case of ASP30 substrate of which carbide particles dispersed more finely than M42. Therefore, it could be concluded that both the density of film and interfacial structure can affect the adhesion property. Overheating of substrate could be resulted in low adhesion resistance due to high residual stress developed in the film.

• Bulletin of the Korean Chemical Society
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• 제18권6호
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• pp.640-643
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• 1997

Pure titanium dioxide $(TiO_2)$ films were prepared by pulsed laser deposition on a single crystal Si(100) substrate. We have investigated the growth of crystalline titanium dioxide films with respect to substrate temperature and ambient oxygen pressure. The structural properties of the films were analyzed by X-ray diffraction. We found that the anatase as well as the rutile phases could be formed from the original rutile phase of the target $TiO_2$. At 0.75 torr of ambient oxygen pressure, the structure of $TiO_2$ film was amorphous at room temperature, anatase between 300 and 600 ℃, a mixture of anatase and rutile between 700 and 800 ℃, and only rutile at 900 ℃ and above. However, at a low ambient oxygen pressure, the rutile phase became dominant; the only rutile phase was obtained at the ambient oxygen pressure of 0.01 torr and the substrate temperature of 800 ℃. Therefore, the film structures were largely influenced by substrate temperature and ambient oxygen pressure.

• 한국표면공학회지
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• 제29권6호
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• pp.788-796
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• 1996

$TiO_2$ films prepared by RF magnetron sputtering, electron beam evaporation, ion assisted deposition (IAD) and sol-gel method are prepared on c-Si substrate and vitreous silica substrate respectively. From the transmission spectra of $TiO_2$ films on vitreous silica substrate in the spectral region from 190 nm to 900 nm, k($\lambda$) of $TiO_2$ is obtained. Using k($\lambda$) in the interband transition region the coefficients of the quantum mechanical dispersion relation of an amorphous $TiO_2$ and hence n($\lambda$) including the optically opaque region of above fundamental transition energy are obtained. The spectroscopic ellipsometry spectra of $TiO_2$ films in the spectral region of 1.5-5.0eV are model analyzed to get the film packing density variation versus i) substrate material, ii) film thickness and iii) film growth technique. The complex refractive index change of these $TiO_2$ films versus water condensation is also studied. Film micro-structures by SE modelling results are compared with those by atomic force microscopy images and X-ray diffraction data.