• 제목/요약/키워드: Ti substrate

검색결과 1,384건 처리시간 0.026초

Dielectric Properties of Ca0.8Sr1.2Nb3O10 Nanosheet Thin Film Deposited by the Electrophoretic Deposition Method

  • Yim, Haena;Yoo, So-Yeon;Choi, Ji-Won
    • 센서학회지
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    • 제27권1호
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    • pp.1-5
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    • 2018
  • Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.

PLD 법에 의한 YBCO 박막의 증착 조건에 따른 특성 (Study on deposition conditions of YBGO films grown by pulsed laser deposition)

  • 최수정;정준기;박유미;고락길;송규정;박찬;유상임
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2003년도 학술대회 논문집
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    • pp.109-112
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    • 2003
  • The high temperature superconducting YBCO films were deposited on the SrTiO$_3$(100) single crystals to find out the proper deposition conditions of YBCO on biaxially-textured metal substrates. Different sets of the substrate temperature, oxygen partial pressure and laser fluence were used to investigate the effect of deposition conditions on the superconducting properties. The new apparatuses for measuring critical temperature (Tc) and critical current (Ic) were designed and manufactured, which were used to obtain Tc's and Ic's of the deposited films. The accuracy of the new apparatus was confirmed by comparing the results with those from SQUID magnetometer. The results on the YBCO films deposited on single crystal substrates which will be used to get the optimum deposition conditions of YBCO films in the coated conductor, are summarized in this report.

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Towards Multi-color Microencapsulated Electrophoretic Display

  • Kim, Chul-Am;Myoung, Hey-Jin;Kang, Seung-Youl;Kim, Gi-Heon;Ahn, Seong-Deok;You, In-Kyu;Oh, Ji-Young;Baek, Kyu-Ha;Suh, Kyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.464-467
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    • 2005
  • In this paper, we present techniques to manufacture color electronic ink for multi-color electrophoretic display implementation. The charged color pigments have been prepared to have superior affinity for dielectric fluid. White $TiO_2$ nanoparticles were modified with poly(methyl methacrylate) copolymer for a microencapsulated electrophoretic display system, in order to reduce the density mismatch between nanoparticles and dielectric medium. These color balls and white pigment particle suspensions were microencapsulated through the typical microencapsulation technique. We fabricate the microcapsules to the single layer on flexible ITO substrate to test the multi-color electrophoretic display application.

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PZT(10/90)/PZT(90/10) 이종층 박막의 구조적, 전기적 특성 (Structural and Electrical Properties of PZT(10/90)/PZT(90/10) Heterolayered Thin Films)

  • 이성갑;김경태;배선기;이영희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권2호
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    • pp.98-102
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    • 2000
  • Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO2/Si substrate using PZT(10/90) and PZT(90/10) m7etal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structures without presence of rosette structure. It can be assumed that the lower PZT layers played a role of nucleation site for the formation of the upper PZT layer. Pb-deficient PZT phase was formed at PZT/Pt interface due to the diffusion of Pb element into a Pt bottom electrode. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6%, respectively. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered film were $7.18\muC/cm^2$ and 68.5kV/cm, respectively. Leakage current densities were increased with increasing the number of coatings, and the value of the PZT-4 film was about $7\times10-8A/cm^2$ at 0.05MV/cm.

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Three-Dimensional Self-Assembled Micro-Array Using Magnetic Force Interaction

  • Park, Yong-Sung;Kwon, Young-Soo;Eiichi Tamiya;Park, Dae-Hee
    • KIEE International Transactions on Electrophysics and Applications
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    • 제3C권5호
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    • pp.182-188
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    • 2003
  • We have demonstrated a fluidic technique for self-assembly of microfabricated parts onto substrate using patterned shapes of magnetic force self-assembled monolayers (SAMs). The metal particles and the array were fabricated using the micromachining technique. The metal particles were in a multilayer structure (Au, Ti, and Ni). Sidewalls of patterned Ni dots on the array were covered by thick negative photoresist (SU-8), and the array was magnetized. The array and the particles were mixed in buffer solution, and were arranged by magnetic force interaction. Binding direction of the metal particle onto Ni dots was controlled by multilayer structure and direction of magnetization. A quarter of total Ni dots were covered by the particles. The binding direction of the particles was controllable, and condition of particles was almost even with the Au surface on top. The particles were successfully arranged on the array.

Ru/$RuO_2$ 금속/산화물 이중전극 위에 증착한 PZT 박막의 전기적 특성 (Electrical Properties of PZT Thin Films Deposited on the Ru/$RuO_2$ Metal/Oxide Hybrid Electrodes)

  • 정규원;박영;송준태
    • 한국전기전자재료학회논문지
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    • 제14권4호
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    • pp.281-288
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    • 2001
  • PZT thin films (3500$\AA$) have been prepard on the Ru/Ru $O_2$ and Ru $O_2$ bottom electrodes with a RF magnetron sputtering system using P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ ceramic target. Ru/Ru $O_2$ bottom electrode was fabricated by in-situ processing controlled the $O_2$ partial pressure. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrode were preferred oriented (101) plane. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrodes showed better electrical properties than those with Ru $O_2$ bottom electrodes because Ru $O_2$ prevented oxygen vacancies and impurities from existing withing the interface and substrate.e.

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Sol-Gel법으로 제작한 PZT(20/80)/PZT(80/20) 이종층 박막의 구조 및 유전 특성 (Structural and Dielectric Properties of PZT(20/80)/PZT(80/20) Heterolayered Thin Films Prepared by Sol-Gel Method)

  • 심광택;이영희
    • E2M - 전기 전자와 첨단 소재
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    • 제10권10호
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    • pp.983-988
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    • 1997
  • We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

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Sol-Gel 법으로 제작한 PZT이종층 박막의 운전 및 누설전류 특성 (Dielectric Properties and Leakage Current Characteristics of PZT Heterolayered Thin Films by the Sol-Gel Method)

  • 심광택;이영희;이성갑;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1229-1231
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    • 1997
  • In this work, PZT(20/80)/(80/20) heterolayered thin film that has the tetragonal and rhombohedral structure was fabricated by Sol-Gel method spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. The thickness of PZT-1 film obtained by six-times of drying/sintering process was about 480[nm]. This procedure was repeated several times to form PZT heterolayered thim film. PZT-5 thin films with top layer of tetragonal PZT(20/80) thin film showed dense grain structure and PZT-6 thin film with top layer of rhombohedral PZT(80/20) thin film showed the microstructure without rosette. Dielectric constant increased with increasing the number of coatings, and it was about 13S5 at PZT-6 thin film. Dielectric loss was not depend on the number of coatings.

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금속기질에 앓은 마이크로 다공질 스케폴드 코팅에 관한 연구 (Thin Micro-Porous Scaffold Layer on Metallic Substrate)

  • 신동춘;자이젱 미아오;김원철
    • 동력기계공학회지
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    • 제14권5호
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    • pp.41-47
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    • 2010
  • 티타늄과 티타늄 합금은 재료적 특이성 때문에 심장 혈관 임플란트에서 일반적으로 사용되어 왔다. 일찍이 적용된 예로는 인공심장판막, 심박조율기의 보호케이스, 혈액 순환 장치 등이 있다. 하지만 물질유도혈전증(Material-induced thrombosis)은 혈전폐색에 의해 기인한 기능 손실로 심장혈관 임플란트 장치의 주된 합병증으로 존재하고 있으며, 심장혈관 임플란트의 혈전유전자는 심장혈관장치의 발달에 주된 난관 중 하나로 남아있다. 그리고 텍스처 혈액 접합 물질(Textured blood-contacting material)은 1960년대 초반 이후부터 혈액순환 보조 장치의 임상실험에 사용되고 있다. 접합 물질에 내장된 텍스처 섬유조직 표면은 형성, 성장, 안정적 부착, 생물학적 내벽(neointimal layer) 등 유도 혈액(entrapping blood) 성분에 의해 형성된다. 공동(cavity) 형상의 용해 가능한 미립자를 사용하는 SCPL법(Solvent casting/particulate leaching method)은 티타늄 기질 이전에 형성된 폴리우레탄 위에 텍스처(texture)를 생성하기 위해 사용되었다. 또한 콜라겐의 부동화(不動化)에 의한 공동(cavity)은 혈액 접합면에 잔존하기 위한 내피세포를 고정할 수 있는 효과가 있다. cpTi로 층화된 PU 기소공성(microporous)은 구조적 특성과 혈전증 감소를 위한 생물학적 내벽 사용의 잠재성을 평가하기 위한 세포 공동체 실험을 통해서 평가되었다.

폴리머 기판위에 형성된 나노구조제어 알루미나의 캐패시터 특성 (Capacitance Properties of Nano-Structure Controlled Alumina on Polymer Substrate)

  • 정승원;민형섭;한정환;이전국
    • 한국재료학회지
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    • 제17권2호
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    • pp.81-85
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    • 2007
  • Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.