• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.2
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• pp.846-849
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• 2013

Thin film of $TiO_2$ was obtained by the sol-gel dip method on the brosilicate glass substrate. It was found that the film was about $1.5{\mu}m$ thick as obtained by 4 successive coatings and annealed at varied temperatures ranged from $300^{\circ}C$ to $1100^{\circ}C$ for 2 hrs. The substrate used was having the surface area of $100mm^2$. Increasing the annealing temperature caused to change in mineralogical phase of titanium oxide i.e., amorphous, crystalline antase to rutile phases. The particle size of the titanium oxide film were ranged from $0.1{\sim}0.54{\mu}m$ estimated by the SEM analysis. The material showed an absorbance maximum at the wavelength 390nm obtained by UV-visible spectrophotometer. These results therefore, indicated that the $TiO_2$ film obtained relatively at low annealing temperature consisted predominantly with anatase phase; possessed higher photocatalytic behavior i.e., 2.4 times higher than that of only UV lamp irradiation.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.1
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• pp.7-11
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• 2006

Since ceramic layers coated on machinery components inevitably experience the changes in their properties it is necessary to evaluate the characteristics of ceramic coating layers nondestructively for a reliable use of coated components and 4heir remaining life prediction. To address such a need, in the present study, an ultrasonic backward radiation technique is applied to investigate the characteristics of leaky Rayleigh surface waves propagating through the very thin TiN ceramic layers coated on AISI 1045 steel or austenitic 304 steel substrate with three different conditions of surface roughness, coating layer thickness and wear condition. In the experiments performed in the present work, the peak angle and the peak amplitude of ultrasonic backward radiation profile varied sensitively according to three specimen preparation renditions. in fact, this result demonstrates a high possibility of the ultrasonic backward radiation as an effective tool for the nondestructive characterization of the resting layers even in such a thin regime.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• Journal of Photoscience
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• v.12 no.1
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• pp.17-23
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• 2005

Application of a new photocatalyst has been attempted to improve the efficiency and rates of photocatalytic degradation of azo dyes by using a model dye such as Methyl Orange. As a new photocatalyst, $TiO_2$ encapsulated EFAL-removed zeolite Y ($TiO_2$ /EFAL-removed zeolite Y) has been synthesized by ion-exchange in the mixture of EFAL-removed zeolite Y with 0.05 M aqueous [$(NH_4)_2 TiO(C_2O_4)_2.H_2O$] [$TiO(C_2O_4)_2.H_2O$]. This new photocatalyst has been characterized by measuring XRD, IR and reflectance absorption spectra as well as ICP analysis, and it was found that the framework structure of $TiO_2$ /EFAL-removed zeolite Y is not changed by removing the extra-framework aluminum (EFAL) from the normal zeolite Y and the $TiO_2$ inside the photocatalyst exists in the form of $(TiO^{2+})_n$ nanoclusters. Based on the ICP analysis, the Si/Al ratio of the $TiO_2$ /EFAL-removed zeolite Y and the weight of $TiO_2$ were determined to be 23 and 0.061g in 1.0g photocatalyst, respectively. It was also found that adsorption of the azo dye in the $TiO_2$ /EFAL-removed zeolite is very effective (about 80 % of the substrate used). This efficient adsorption contributes to the synergistic photocatalytic activities of the $TiO_2$ /EFAL-removed zeolite by minimizing the required flux diffusion of the substrate. Thus, the photocatalytic reduction of methyl orange (MO) was found to be 8 times more effective in the presence of $TiO_2$ /EFAL-removed zeolite Y than in the presence of $TiO_2$ /normal zeolite Y. Furthermore, the photocatalytic reduction of MO by using 1.0 g of the $TiO_2$ /EFAL-removed zeolite Y containing 0.061g of $TiO_2$ is much faster than that carried out by using 1.0 g of Degussa P-25.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.581-584
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• 1998

TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.715-720
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• 1998

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.244-245
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• 2009

Sol-gel coatings of $TiO_2$ have been prepared from $TiO_2$ sol and deposited by dip-coating technique on 316L stainless steel sheets in order to study the electrochemical behaviorin corrosive solutions. The influence of the coatings on the chemical corrosion of the substrate has been evaluated by potentiodynamic polarization curves in different aqueous NaCl solution at $25^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.159-159
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• 2009

본 연구는 기판 바이어스 전압변화에 따른 DC 스퍼터링 TiN 박막의 우선 결정배향성, 표면조도, 평균결정립 크기 및 단면 미세구조에 미치는 영향에 대해 조사하였다.