• Analytical Science and Technology
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• v.5 no.2
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• pp.199-202
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• 1992

Ti-silicide was formed by using metal-Ti target and composite target on the silicon substrate that $BF_2$ were introduced into. Implant energies of $BF_2$ were 50keV and 90keV. The behavior of boron was investigated by SIMS. The redistribution of boron occurred during the formation of Ti-silicide by metal-Ti target and the sample implanted at the energy of 50keV showed severe out-diffusion. In the case that Ti-silicide was formed by composite target, there was little redistribution of boron.

• Tribology and Lubricants
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• v.37 no.6
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• pp.240-245
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• 2021

Ceramic coatings with high hardness and excellent chemical stability have been successfully applied to various machine elements, tools, and implants. However, in the case of monolayer coating on soft substrates, a high-stress concentration at the interface between the coating and the substrate causes delamination of the coating layer. Recently, to overcome this problem, multilayer coatings with a metal layer with a low modulus of elasticity added between the ceramic and the substrate have been widely applied. This study presents the third part of a recent study and focuses on the effect of the number of coating layers on the Brinell hardness of multilayered coating with TiN/Ti, following the two previous studies on a new Brinell hardness test method for a coated surface and on the influence of substrate and coating thickness. Indentation analyses are performed using finite element analysis software, von Mises stress and equivalent plastic strain distributions, load-displacement curves, and residual indentation shapes are presented. The number of TiN/Ti layers considerably affect the stress distributions and indentation shapes. Moreover, the greater the number of TiN/Ti layers, the higher is the Brinell hardness. The stress and plastic strain distributions confirm that the multilayer coatings improve the wear resistance. The results are expected to be used to design and evaluate various coating systems, and additional study is required.

• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.405-413
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• 1994

초고진공에서 기판 Si(111)-7$\times$7 위에 Ti:Si 또는 1:2의 조성비로 Ti와 Si을 동시증착한 후 in situ 열처리하여 TiSi2 박막을 에피택셜 성장시켰다 XRD와 XPS 분석결과 동시증착된 혼합 층에서 C49-TiSi2 박막의 성장은 핵형성에 의함을 확인하였으며 양질의 C49-TiSi2 박막은 Ti를 증착한후 Ti와 Si를 동시 증착한 (Ti+2Si)/(Ti)/Si(111)-7$\times$7구조의 시료를 초고진공에서 50$0^{\circ}C$에서 열처리하여 얻을수 있었다. 형성된 C49-TiSi2/Si(111)의 계면은 깨끗하였고 HRTEM 분석 결과 C49-TiSi2\ulcornerSi(111)의 계면은 약 10。 의 편의를 가지면서 TiSi2[211]∥Si[110] TiSi2(031)/Si(111) 의 정합성을 가졌으며 시료의 전 영 역에 에피택셜 성장되었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.995-998
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• 2003

TiO$_2$ thin films have been grown by MOCVD. Envelope methods are applied to the analysis of the transmission spectra to obtain the optical constants such as refractive indices and extinction coefficients for the TiO$_2$ thin films. The envelope methods are proved to be accurate by simulating the transmission spectra. TiO$_2$ thin films start to crystallize at 35$0^{\circ}C$ and then crystallize fully into anatase phase at foot or higher temperatures. Activation energies are obtained by plotting the deposition rate with varying the substrate temperature. It is 17.8 kcal/mol for the reaction limited regions. The refractive infer and the extinction coefficient of the TiO$_2$ thin film at λ=632.8 nm increases from 2.19 to 2.32 and decreases from 0.021 to 0.007, respectively, as the substrate temperature increases from 400 to $600^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.335-340
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• 2000

We investigated the role of the capping layers in the formation of the cobalt silicide in Co/Si systems with TiN and Ti capping layers and without capping layers. The Co/Si interfacial reactions and the phase transformations by the rapid thermal annealing (RTA) processes were observed by sheet resistance measurements, XRD, SIMS and TEM analyses for the clean silicon substrate as well as for the chemically oxidized silicon substrate by $H_2SO_4$. We observed the retardation of the cobalt disilicide formation in the Co/Si system with Ti capping layers. In the case of Co/$SiO_2$/Si system, cobalt silicide was formed by the Co/Si reaction due to with the dissociation of the oxide layer by the Ti capping layers.

• Journal of Korean Society of Water and Wastewater
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• v.29 no.1
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• pp.33-38
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• 2015

In this study, flat-type photocatalytic reaction system is applied to reduce toxic hexavalent chromium (Cr(VI)) to trivalent chromium (Cr(III)) in aqueous solution under UV irradiation. To overcome the limitation of conventional photocatalysis, a novel approach toward photocatalytic system for reduction of hexavalent chromium including nanotubular $TiO_2$ (NTT) on two kinds of titanium substrates (foil and mesh) were established. In addition, modified Ti substrates were prepared by bending treatment to increase reaction efficiency of Cr(VI) in the flat-type photocatalytic reactor. For the fabrication of NTT on Ti substrates, Ti foil and mesh was anodized with mixed electrolytes ($NH_4F-H_2O-C_2H_6O_2$) and then annealed in ambient oxygen. The prepared NTT arrays were uniformly grown on two Ti substrates and surface property measurements were performed through SEM and XRD. Hydraulic retention time(HRT) and substrate type were significantly affected the Cr(VI) reduction. Hence, the photocatalytic Cr(VI) reduction was observed to be highest up to 95% at bended(modified) Ti mesh and lowest HRT. Especially, Ti mesh was more effective as NTT substrate in this research.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.511-511
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• 2007

Low-emissivity (low-e) coatings with visible transparency have attracted increased interest m reducing heat radiation loss through window panes from ecological and sustainable aspects. $TiO_2$-silver transparent thin films for low-e have good properties for UV and IR blocking as well as photocatalyst compared to that with commercial UV blocking films such as fluorine doped oxide (FTO), antimony doped tin oxide (ATO), etc. In this study, transparent $TiO_2$-silver thin films were prepared by successive ink-jet printing of commercial nano silver and $TiO_2$ sol. The $TiO_2$ sol, as ink for ink-jet printing, were synthesized by hydrothermal process in the autoclave externally pressurized with $N_2$ gas of 200 bar at $120^{\circ}C$ for 10 hrs. The synthesized $TiO_2$ sols were all formed with brookite phase and their particle size was several to 30 nm. At first nano sized silver sol was coated on glass substrate, after that $TiO_2$ sol was coated by ink-jet printing. With increasing coating thickness of $TiO_2$-silver multilayer by repeated ink-jet coating, the absorbance of UV region (under 400nm) and IR region (over 700nm) also increase reasonably, compared to that with commercial UV blocking films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.350-358
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• 2020

A variety of composite powders having different aluminum and carbon contents are prepared using various organic solvents having different amounts of carbon atoms in unit volume as ball milling agents for titanium and aluminum ball milling. The effects of substrate temperature and post-heat treatment on the texture and hardness of the coating are investigated by spraying with this reduced pressure plasma spray. The aluminum part of the composite powder evaporates during spraying, so that the film aluminum content is 30.9 mass%~37.4 mass% and the carbon content is 0.64 mass%~1.69 mass%. The main constituent phase of the coating formed on the water-cooled substrate is a non-planar α₂ phase, obtained by supersaturated carbon regardless of the alloy composition. When these films are heat-treated at 1123 K, the main constituent phase becomes γ phase, and fine Ti₂AlC precipitates to increase the film hardness. However, when heat treatment is performed at a higher temperature, the hardness is lowered. The main constitutional phase of the coating formed on the preheated substrate is an equilibrium gamma phase, and fine Ti₂AlC precipitates. The hardness of this coating is much higher than the hardness of the coating in the sprayed state formed on the water-cooled substrate. When hot pressing is applied to the coating, the porosity decreases but hardness also decreases because Ti₂AlC grows. The amount of Ti₂AlC in the hot-pressed film is 4.9 vol% to 15.3 vol%, depending on the carbon content of the film.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.498-502
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• 2010

Aluminium titanate($Al_2TiO_5$) has extremely anisotropic thermal expansion properties in single crystals, and polycrystalline material spontaneously microcracks in the cooling step after sintering process. These fine intergranular cracks limit the strength of the material, but provide an effective mechanism for absorbing strain energy during thermal shock and preventing catastrophic crack propagation. Furthermore, since machinable BN-ceramics used as an insulating substrate in current micro-electronic industry are very expensive, the development of new low-cost machinable substrate ceramics are consistently required. Therefore, cheap $Al_2TiO_5$-machinable ceramics was studied for the replacement of BN ceramics. $Al_2O_3-Al_2TiO_5$ ceramic composite was fabricated via in-situ reaction sintering. $Al_2O_3$ and $TiO_2$ powders were mixed with various mol-ratio and sintered at 1400 to $1600^{\circ}C$ for 1 h. Density, hardness and strength of sintered ceramics were systematically measured. Phase analysis and microstructures were observed by XRD and SEM, respectively. Machinability of each specimens was tested by micro-hole machining. The results of research showed that the $Al_2TiO_5$-composites could be used for low-cost machinable ceramics.