• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.257-257
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• 2016

최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.3
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• pp.529-539
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• 1998

A quantitative study of impact damage of ${Al_2}}O_3}-TiO_2$ plasma coated soda-lime glasses was carried out and compared with that of the uncoated smooth glass specimen. The shape of cracks by the impact of steel ball was observed by stereo-microscope and the decrease of the bending strength due to the impact of steel ball was measured through the 4-point bending test. At the low velocity, cone cracks were occurred. As the impact velocity increases, initial lateral cracks were propagated on the slanting surface of a cone crack, and radial cracks were generated at the crushed site. When the impact velocity of steel ball exceeds the critical velocity, the contact site of specimen was crushed due to plastic deformation and then radial and lateral cracks were largely grown. Crack length of coated specimens was smaller than that of uncoated smooth specimen due to the effect of coating layer on the substrate surface. According to impact velocity, the bending strength of coated specimens had no significant difference, compared with that of the uncoated smooth specimen. But this represents that the bending strength of coated specimens was increased, considering the effect of sand blasting damage which was performed to increase the adhesion force of coating layer.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.16-20
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• 2004

YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.35-38
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• 1997

The interfacial bonding energy between laser surface treated HA layer and Ti alloy substrate was investigated using a mechanical push-out tester. The initial slope of shear-stress and reduced displacement curves, maximum interfacial bond strength and bonding energy were calculated from results of the push-out test. The calculated initial slpoes are 38 MPa for the Ti alloy(A), 65 MPa for the sandblast finished specimen(B), 95 MPa for the HA plasma spray coated specimen and 49 MPa for the laser surface treated specimen(D). The maximum interfacial bonding strength are 3 MPa for the A, 19 MPa for the B, 20 MPa for the C, 10 MPa for the D. The interfacial bonding energies are $3.3\times10^{-9}J/mm^2$ for the A, $15.5\times10^{-9}J/mm^2$ for the B, $15.6\times10^{-9}J/mm^2$ for the C and $18.3\times10^{-9}J/mm^2$ for the D. Microscopic observation shows that the breaking of the laser treated specimen had been occured through the boundary between HA layer and polymer resin, but the untreated specimen had been occured through the inside of HA coating layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.323-328
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• 2004

Down-conversion of Eu$^{3+}$ doped LiGdF$_4$ (LGF) for increasing the cell efficiency on dye-sensitized Ti $O_2$ solar cells has been studied. The dye sensitized solar cell (DSC) consisting of mesoporous Ti $O_2$ electrode deposited on transparent substrate, an electrolyte containing I$^{[-10]}$ /I$_3$$^{[-10]}$ redox couple, and Pt counter electrode is a promising alternative to the inorganic solar cell. The structure of DSC is basically a sandwich type, viz., FTO glass/Ru-red dye-absorbed Ti $O_2$/iodine electrolyte/sputtered Pt/FTO glass. The cell without down converter had open circuit potential of approximately 0.66 Volt, the short circuit photocurrent density of 1.632 mA/$\textrm{cm}^2$, and fill factor of about 50 ％ at the excitation wavelength of 550 nm. In addition, 5.6 mW/$\textrm{cm}^2$ incident light intensity beam was used as a light source. From this result, the calculated monochromatic efficiency at the wavelength of 550 nm of this cell was about 9.62 ％. The incident photon to current conversion efficiency (IPCE) of N3 used as a dye in this work is about 80 ％ at around 590 nm and 610 nm, which is the emission spectrum of Eu$^{3+}$ doped LGF, results in efficiency increasing of DSC.C.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.183-189
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• 2004

Cuprous oxide (Cu$_2$O) thin films are cathodically deposited on Indium Tin Oxide (ITO) substrate. The as-deposited films were heat-treated at 30$0^{\circ}C$ to obtain Cu$_2$O. After the heat treatment, the film was changed from Cu metal into Cu$_2$O phase. The phase, morphology and photocurrent density of the films were dependent on the preparation conditions of deposition time, applied voltage, and the duration of heat treatment. The Cu$_2$O films were characterized by X-Ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The apparent grain size of the films formed by the normal method was larger than those grown by the pulse method. The CU$_2$O film what was deposited at -0.7 V for 300 sec and then, calcined at 30$0^{\circ}C$ for 1 h showed the predominant photocurrent density of 1048 $\mu$A/$\textrm{cm}^2$. And the stability of Cu$_2$O electrodes were improved with chemically deposited TiO$_2$ thin films on Cu$_2$O.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.61-66
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• 1998

High quality c-axis oriented $YBa_{2}Cu_{3}O_{7}$ films were prepared using the pulsed laser deposition on $SrTiO_{3}$(100) substrate. The atomically smooth $SrTiO_{3}$surface with terraces one unit cell in height could be obtained by a high temperature annealing. $YBa_{2}Cu_{3}O_{7}$ thin films deposited on the substrates exhibited layer-by-layer growth with a c-axis unit cell height. $YBa_{2}Cu_{3}O_{7}$ thin films thus prepared showed critical temperature ${\ge}90$ K with transition width ${\le}0.6$ K, room temperature resistivity of ${\sim}300{\mu}{\Omega}cm$, and critical current density ${\sim}4.6{\times}10^{6}A/cm^{2}$ at 77 K.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.135-140
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• 2002

In this paper, We deposited the BST thin-film on p-type (100)Si, (100)MgO and MgO/Si substrates respectively using RF magnetron sputtering method. After the BST thin-fil m was deposited, we performed RTA(rapid thermal anneal) at $600^{\circ}C$, oxygen atmosphere and 1 min. In the XRD measurement, we observed the (110) $Ba_{0.5}Sr_{0.5}TiO_3$ main peak in all samples and the peak intensity increased after post annealing. Then we manufactured a capacitor using Al Electrode and measured I-V, C-V. In C-V measurement result values for each substrate, dielectric constant was calculated 120 (bare Si), 305(MgO/Si), 310(MgO) respectively. A leakage current density was present less than 1 $\mu\textrm{A/cm}^2$ at applied fields below 0.3 MV/cm. In conclusion we confirmed that MgO/Si substrates give good results for BST thin-film deposition.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.