• Title/Summary/Keyword: Ti precursor

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Synthesis and Electrochemical Characteristics of Li4Ti5O12 Nanofibers by Hydrothermal Method (수열법에 의한 Li4Ti5O12 Nanofibers 합성 및 전기화학적 특성에 관한 연구)

  • Kim, Eun-Kyung;Choi, Byung-Hyun;Jee, Mi-Jung;Kwon, Yong-Jin;Seo, Han;Kim, Young-Jun;Kim, Kwang-Bum
    • Journal of the Korean Ceramic Society
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    • v.47 no.6
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    • pp.627-632
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    • 2010
  • In this paper the effect of the structure, particle size, morphology of nanofibers and nanoparticles for the electrochemical characteristics of $Li_4Ti_5O_{12}$ was investigated. The $H_2Ti_2O_5{\cdot}H_2O$ synthesized in hydrothermal treatment from a NaOH treatment on $TiO_2$ by ion exchange processing with HCl solutions. After the $Li_4Ti_5O_{12}$ nanofibers synthesized in hydrothermal treatment of $H_2Ti_2O_5{\cdot}H_2O$ and $LiOH{\cdot}H_2O$. The hydrogen titanate precursor prepared by ion exchange processing with 0.1~0.3M HCl solutions and the final products calcined at $350^{\circ}C{\sim}400^{\circ}C$. The $Li_4Ti_5O_{12}$ nanofibers showed well reversibility during the insertion and extraction of Li, good cycle performance, high capacity and low electrochemical reaction resistance than nanoparticles. also c-rate exhibited a discharge capacity of 172 mAh/g at 0.2C and 115mAh/g at 5C, which is the 77%, 67% of that obtained in the process charged, discharged at 0.2C.

Characterization of Co-AC/TiO2 Composites and Their Photonic Decomposition for Organic Dyes

  • Chen, Ming-Liang;Son, Joo-Hee;Park, Chong-Yun;Shin, Yong-Chan;Oh, Hyun-Woo;Oh, Won-Chun
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.429-433
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    • 2010
  • In this study, activated carbon (AC) as a carbon source was modified with different concentrations of cobalt chloride ($CoCl_2$) to prepare a Co-AC composite, and it was used for the preparation of Co-AC/$TiO_2$ composites with titanium oxysulfate (TOS) as the titanium precursor. The physicochemical properties of the prepared Co-AC/$TiO_2$ composites were characterized by $N_2$ adsorption at 77 K, X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis. The photocatalytic treatments of organic dyes were examined under an irradiation of visible light with different irradiation times. $N_2$ adsorption data showed that the composites had decreased surface area compared with the pristine AC, which was $389\;m^2/g$. From the XRD results, the Co-AC/$TiO_2$ composites contained a mixturephase structuresof anatase and rutile, but a cobalt oxide phase was not detected in the XRD pattern. The EDX results of the Co-AC/$TiO_2$ composites confirmed the presence of various elements, namely, C, O, Ti, and Co. Subsequently, the decomposition of methylene orange (MO, $C_{14}H_{14}N_3NaO_3S$) and rhodamine B (Rh.B, $C_{28}H_{31}ClN_2O_3$) in an aqueous solution, respectively, showed the combined effects of an adsorption effect by AC and the photo degradation effect by $TiO_2$. Especially, the Co particles in the Co-AC/$TiO_2$ composites could enhance the photo degradation behaviors of $TiO_2$ under visible light.

Improvement in Capacitor Characteristics of Titanium Dioxide Film with Surface Plasma Treatment (플라즈마 표면 처리를 이용한 TiO2 MOS 커패시터의 특성 개선)

  • Shin, Donghyuk;Cho, Hyelim;Park, Seran;Oh, Hoonjung;Ko, Dae-Hong
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.1
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    • pp.32-37
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    • 2019
  • Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

Dieletric and Electric properties of PNN-PZN-PZT Ceramic Using Columbite Precursor Method (Columbite Precursor법에 의해 제조된 PNN-PZN-PZT계 세라믹의 유전 및 전기적 특성)

  • Lee, S.H.;Son, M.H.;SaGong, G.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1028-1030
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    • 1995
  • In the fields of the optics, precise machine, semiconducting processing, the micro-positioning actuators are required for the control of position in the submicron range. In this study, $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb({Zn}_{1/3}Nb_{2/3})O_3-Pb({Zr}_{1/2}Ti_{1/2})O_3$ ceramics were fabricated by solid state reaction. The structural, dielectric and electric properties were investigated for sintering condition. The specimen sintered at $1,150(^\circ}C)$ for 1hr, had the highest density and dielectric contant. The resistivity, dielectric and density were increased with increasing PZN contents.

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Effect of Mineralizer Concentration and Starting Materials on the Characteristics of PZT Powders by Hydrothermal Process (수열합성법으로 제조된 PZT 분말의 특성에 미치는 광화제 농도와 출발물질의 영향)

  • Yang, Beom-Seok;Yun, Ki-Seok;Park, Young-Chul;Won, Chang-Whan
    • Journal of the Korean Ceramic Society
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    • v.42 no.11 s.282
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    • pp.743-748
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    • 2005
  • The effect of reaction parameters in the characteristic of $Pb(Zr_{0.52} Ti_{0.48})O_3$ powders by hydrothermal process was investigated in this study. In the preparation of PZT, the types of starting material and concentration of mineralizer on phase fraction and morphology was investigated respectively. Regardless the types of Pb precursor, PZT was able to synthesize ranging from 7 to 20 on KOH concentration and from 13.01 to 13.55 on pH of solution. The particle size of the PZT powders can be controlled by the mineralizer concentration and various types of precursor.

Optimization of Synthesis Conditions for Improving Ti3AlC2 MAX Phase Using Titanium Scraps (타이타늄 스크랩 활용 Ti3AlC2 MAX 상분율 향상을 위한 합성 조건 최적화)

  • Taeheon Kim;Jae-Won Lim
    • Resources Recycling
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    • v.33 no.1
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    • pp.22-30
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    • 2024
  • To synthesize the Ti3AlC2 MAX phase, a crucial precursor for generating the two-dimensional material MXene, the use of Ti scrap as an initial material is an economically feasible approach. This study aims to optimize the synthesis conditions for the phase fraction of the Ti3AlC2 MAX phase utilizing Ti scrap as the Ti source. The deoxidation of Ti powders, prepared through the hydrogenation-dehydrogenation process from Ti scrap, was effectively accomplished using the deoxidation in solid-state (DOSS) process. The optimal synthesis conditions were established by blending DOSS-Ti, Al, and graphite powders with particle sizes ranging from 25 ~ 32 ㎛ in a molar ratio of 3:1.1:2. The resulting phase fractions were as follows: Ti3AlC2 at 97.25 wt.%, TiC at 0.93 wt.%, and Al3Ti at 1.82 wt.%. Furthermore, the oxygen content of the Ti3AlC2 MAX powder, spanning from 25 ~ 45 ㎛, was measured at 4,210 ppm.

Synthesis of Nanosized SnS-TiO2 Photocatalysts with Excellent Degradation Effect of TBA under Visible Light Irradiation

  • Meng, Ze-Da;Zhu, Lei;Ullah, Kefayat;Ye, Shu;Oh, Won-Chun
    • Korean Journal of Materials Research
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    • v.25 no.9
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    • pp.455-461
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    • 2015
  • SnS-$TiO_2$ nanocomposites are synthesized using simple, cheap, and less toxic $SnCl_2$ as the tin (II) precursor. The prepared nanoparticles are characterized using powder X-ray diffraction (XRD), transmission electron microscopy (TEM), and UV-Vis diffuse reflectance spectra (DRS). The XRD and TEM results indicate that the prepared product has SnS nanoparticles and a grain diameter of 30 nm. The DRS demonstrate that SnS-$TiO_2$ possesses the absorption profile across the entire visible light region. The generation of reactive oxygen species is detected through the oxidation reaction from 1,5-diphenyl carbazide (DPCI) to 1,5-diphenyl carbazone (DPCO). It is found that the photocurrent density and photocatalytic effect increase with the modified SnS. Excellent catalytic degradation of Texbrite BA-L (TBA) solution is observed using the SnS-$TiO_2$ composites under visible light irradiation. It is proposed that both the strong visible light absorption and the multiple exciton excitations contribute to the high visible light photocatalytic activity.

The Influence of Support on Gas Mask Cobalt Catalysts for Low Temperature CO Oxidation (방독마스크용 코발트 촉매의 저온 일산화탄소 산화반응에서 지지체의 영향)

  • Kim, Deog-Ki;Kim, Bok-Ie;Shin, Chae-Ho;Shin, Chang-Sub
    • Journal of the Korean Society of Safety
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    • v.21 no.2 s.74
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    • pp.35-45
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    • 2006
  • Cobalt catalysts for gas mask loaded on various supports such as $Al_{2}O_{3},\;TiO_{2}$, AC(activated carbon) and $SiO_{2}$ were used to examine influences of calcination temperatures and reaction temperatures for CO oxidation. $Co(NO_{3})_2{\cdot}6H_{2}O$ was used as cobalt precursor and the catalysts were prepared by incipient wetness impregnation. The catalysts were characterized using XRD, TGA/DTA, TEM, $N_{2}$ sorption, and XPS. For the catalytic activity, support was in the order of ${\gamma}-Al_{2}O_{3}>TiO_{2}>SiO_{2}>AC\;and\;Al_{2}O_{3}$. The catalytic activity at lower temperature than $80^{\circ}C$ showed that with the increase of reaction temperature, cobalt catalysts on ${\gamma}-Al_{2}O_{3},\;TiO_{2},\;AC\$ has the negative activation energy but that of $SiO_{2}$ was positive.

Effect of Ultrathin Al2O3 Layer on TiO2 Surface in CdS/CdSe Co-Sensitized Quantum Dot Solar Cells

  • Sung, Sang Do;Lim, Iseul;Kim, Myung Soo;Lee, Wan In
    • Bulletin of the Korean Chemical Society
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    • v.34 no.2
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    • pp.411-414
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    • 2013
  • In order to enhance the photovoltaic property of the CdS/CdSe co-sensitized quantum dot sensitized solar cells (QDSSCs), the surface of nanoporous $TiO_2$ photoanode was modified by ultrathin $Al_2O_3$ layer before the deposition of quantum dots (QDs). The $Al_2O_3$ layer, dip-coated by 0.10 M Al precursor solution, exhibited the optimized performance in blocking the back-reaction of the photo-injected electrons from $TiO_2$ conduction band (CB) to polysulfide electrolyte. Transient photocurrent spectra revealed that the electron lifetime (${\tau}_e$) increased significantly by introducing the ultrathin $Al_2O_3$ layer on $TiO_2$ surface, whereas the electron diffusion coefficient ($D_e$) was not varied. As a result, the $V_{oc}$ increased from 0.487 to 0.545 V, without appreciable change in short circuit current ($J_{sc}$), thus inducing the enhancement of photovoltaic conversion efficiency (${\eta}$) from 3.01% to 3.38%.

Preparation and characterization of TiO2 anti-reflective layer for textured Si (100)

  • Choe, Jin-U;Nam, Sang-Hun;Jo, Sang-Jin;Bu, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.322-322
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    • 2010
  • Recently, anti-reflective films (AR) are one of the most studied parts of a solar cell since these films improve the efficiency of photovoltaic devices. Also, anti-reflection films on the textured silicon solar cells reduce the amount of reflection of the incident light, which improves the device performance due to light trapping of incident light into the cell. Therefore, we preformed two step processes to get textured Si (100) substrate in this experiment. Pyramid size of textured silicon had approximately $2{\sim}9\;{\mu}m$. A well-textured silicon surface can lower the reflectance to 10%. For more reduced reflection, TiO2 anti-reflection films on the textured silicon were deposited at $600^{\circ}C$ using titanium tetra-isopropoxide (TTIP) as a precursor by metal-organic chemical vapor deposition (MOCVD), and the deposited TiO2 layers were then treated by annealing for 2 h in air at 600 and $1000^{\circ}C$, respectively. In this process, the treated samples by annealing showed anatase and rutile phases, respectively. The thickness of TiO2 films was about $75{\pm}5\;nm$. The reflectance at specific wavelength can be reduced to 3% in optimum layer.

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