• 한국세라믹학회지
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• 제25권6호
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• pp.704-712
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• 1988

In order to investigate the effect of the second phase on Al2O3 matrix, SiC whisker was dispersed in Al2O3 matrix as a second phase over the content range of 5vol% to 20vol%. To this mixture, Y2O3 or TiO2 powder was added as a sintering additive before isostatically pressing and pressureless sintering at 1800-190$0^{\circ}C$ for 90min in N2 atmosphere. With increasing SiC whisker content, relative densities of composites were decreased and the grain growth of Al2O3 was restricted. When Y2O3 was added as a sintering aid the sintering temperature was 180$0^{\circ}C$, the maximum values of flexural strength, hardness and fracture toughness were 537MPa, 12.1GPa, 3.7MPa.m1/2, respectively. However, when the sintering temperature was elevated to 190$0^{\circ}C$, maximum values of flexural strength, hardness and fracture toughness were 453MPa, 17.5GPa, 4.9MPa.m1/2, respectively. Improved mechanical properties are assumed to be attributed to the crack deflection by the second phase SiC whisker and whisker pullout mechanism.

• 한국세라믹학회지
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• 제50권6호
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• pp.489-494
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• 2013

Nano-sized titanium oxide powders were synthesized by a polymer matrix technique using pulp and Titanium tetraisopropoxide (TTIP) as starting materials. The synthesized powders were characterized by XRD and FE-SEM. The particle size of the powders was controlled by preparation conditions, such as heat treatment temperature and time. After investigating various drying and heat treatment conditions, 50-100 nm sized homogeneous titanium oxide particles were obtained by treating at $600^{\circ}C$ for 1 h. The crystallization and rapid growth of particles was accelerated by increasing heat treatment temperature and time. Anatase phase generated below $600^{\circ}C$ transformed to the rutile phase with increasing heat treatment temperature. Moreover, above $800^{\circ}C$, heat treatment time had a very large influence on particle growth, and changing the heating condition also had a large influence on crystal growth.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.304-310
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• 2003

(Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-Bel method, were mixed with organic binder and then BSCT thick films were fabricated by the screen printing techniques on alumina substrates using the BSCT paste. The structural and the dielectric Properties were investigated for various composition ratio and sintering temperature. The second phase appeared in BSCT(40/40/20) thick film sintered at 1450$^{\circ}C$. BSCT thick film thickness, obtained by four printings, was approximately 110∼120$\mu\textrm{m}$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at 1420$^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5㎸/cm, respectively.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.776-780
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• 2009

In this study, the opto-electric properties of EL devices with PMN dielectric layer with variation of firing tempereature were investigated. For the PMN dielectric layer process, the paste was prepared by optimization of quantitative mixing of PMN powder, $BaTiO_3$, Glass Frit, $\alpha$-Terpineol and ethyl cellulose. The EL device stack consists of Alumina substrate ($Al_2O_3$), metallic electrode (Au), insulating layer (manufactured PMN paste), phosphor layer (ELPP- 030, ELK) and transparent electrode (ITO), which is well structure as a thick film EL device. The phase transformation properties of PMN dielectric with various firing temperatures of $150^{\circ}C$ to $850^{\circ}C$ was characterized by XRD. Also the opto-electric properties of EL devices with different firing temperature were investigated by LCR meter and spectrometer. We found the best opto-electric property was obtained at the condition of $550^{\circ}C$ firing which is 3432.96 $cd/m^2$ at 1948.3 pF Capacitance, 40 kHz Frequency, 40% Duty, Vth+330 V voltage.

• Membrane and Water Treatment
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• 제6권3호
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• pp.251-262
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• 2015

In this work the preparation and characterization of a membrane containing a uniform mesoporous Titanium oxide top layer on a porous stainless steel substrate has been studied. The 316 L stainless steel substrate was prepared by powder metallurgy technique and modified by soaking-rolling and fast drying method. The mesoporous titania membrane was fabricated via the sol-gel method. Morphological studies were performed on both supported and unsupported membranes using scanning electron microscope (SEM) and field emission scanning microscope (FESEM). The membranes were also characterized using X-ray diffraction (XRD) and $N_2$-adsorption / desorption measurement (BET analyses). It was revealed that a defect-free anatase membrane with a thickness of $1.6{\mu}m$ and 4.3 nm average pore size can be produced. In order to evaluate the performance of the supported membrane, single-gas permeation experiments were carried out at room temperature with nitrogen gas. The permeability coefficient of the fabricated membrane was $4{\times}10^{-8}\;lit\;s^{-1}\;Pa^{-1}\;cm^{-1}$.

• E2M - 전기 전자와 첨단 소재
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• 제1권1호
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• pp.35-43
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• 1988

In this study, PLZT ceramics were fabricated by the freeze-drying and normal sintering method. The composition rate of the specimen was selected 9/65/35(La/Zr/Ti) which had good optical and dielectric properties, sintering time was varied 1, 10, 30, 50, 55, 60 and 65(hr) at 1250(.deg.C). After sintering, the optical and dielectric properties were investigated with the grain size. As the result of the experiment, the particle size of the powder prepared by freeze-drying method was less than 1(um). The relative dielectric constant was increased linearly with the sintering time and specimen sintered for 65(hr) had the highest value, 5780. Grain was grown with increasing time, in the case of specimen sintered for 60(hr), the grain size was 8.4(um). Transmittance was increased with the grain size. In the case of 8.4(um) grain size, the transmittance was 56(%). Curie temperature was decreased linearly by the surface-layer effect of space-charge. In the case of grain size, 1.8(um), 8.4(um), curie temperatures were appeared at 100(.deg.C) and 80(.deg.C), respectively.

• 한국세라믹학회지
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• 제40권3호
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• pp.229-233
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• 2003

By using an oxynitride glass as a sintering additive, the effects of BN content on microstructure and mechanical properties of the hot-pressed and subsequently annealed SiC-BN composites were investigated. The microstructures developed were analyzed by image analysis. The morphology of SiC grains was strongly dependent on BN content in the starting composition. The aspect ratio of SiC decreases with increasing BN content and the average diameter of SiC shows a maximum at 5 wt% BN and decreases with increasing BN content in the starting powder. The fracture toughness increased with increasing BN content while the strength decreased with increasing BN content. The strength and fracture toughness of SiC or SiC-TiC composites were strongly dependent on the morphology of SiC grains, but the strength and fracture toughness of SiC-BN composites were strongly dependent on BN content rather than morphology of SiC grains. These results suggest that fracture toughness of SiC ceramics can be tailored by manipulating BN content in the starting composition. Typical fracture toughness and strength of SiC-10 wt% BN composites were 8 MPa$.$m$\^$1/2/ and 445 MPa, respectively.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.274-280
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• 1998

Polycrystalline $Sr_2Nb_2O_7$ ceramics with very high Curie temperature were sintered using the powder derived by the chemical coprecipitation method (CCP). The phase evolution and grain-orientation of sintered samples were examined by XRD, while sintering behavior, dielectric properties and polarization were studied by SEM and ferroelectric tester. Extremely high degree of grain-orientation was observed along the (0k0) direction, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal. Thin film fabrication of $Sr_2Nb_2O_7$ in the pyroniobate family was also attempted on $SiO_2$/Si(100), Pt/$SiO_2$/Si(100), Pt/Ti/$SiO_2$/Si(100) and Pt/$ZrO_2/SiO_2/Si_2(100)$ substrates, using metalorganic decomposition (MOD) process. Neodecanoate precursor solution was prepared by mixing strontium neodecanoate with niobium neodecanoate synthesized from niobium ethoxide. It was found that $Sr_2Nb_2O_7$ single phase appeared in XRD patterns the samples annealed above $950^{\circ}C$. The effect of substrate type on film microstructure and dielectric properties was observed.

• 한국표면공학회지
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• 제29권5호
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• pp.399-406
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• 1996

The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of $N_2$ besides Ar as sputtering gas suppressed the cross-over, and consequently resulted in the (002) preferred orientation without exhibiting the cross-over. We attribute the observed cross-over phenomena to the competition between the surface and the strain energy. The x-ray powder diffraction, the x-ray reflectivity, and the ex-situ AFM surface topology study consistently suggest that the microscopic growth front was in fact always the (002) planes. In the initial stage of growth, the (002) planes were aligned to the substrate surface to minimize the surface energy. At later stages, however, the (002) growth front tilted away from the surface by about $60^{\circ}$ to relax the strain, which caused the cross-over of the preferred growth direction to the <111> direction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.19-20
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• 2007

At first the $Ba_{0.5}Sr_{0.5}TiO_3$-MgO powder with $B_2O_3-Li_2CO_3$ were made by the Sol-Gel method. The thick films of BST-MgO with $B_2O_3-Li_2CO_3$ were fabricated on the $Al_2O_3$ substrates coated with Pt by the screen printing method. The structural and dielectric properties of the BST-MgO thick film with $B_2O_3-Li_2CO_3$, addition were investigated. The structure of the BST-MgO with $B_2O_3-Li_2CO_3$ thick films were dense and homogeneous with no pores. The dielectric constant was increased and dielectric loss was decreased with increasing the sintering temperature.