• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.58-60
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• 2004

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated on alumina substrate by screening printing method. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The structural and electrical properties of $BaTiO_3/SrTiO_3$ heterolayered thick films were compared with pure $BaTiO_3$ and $SrTiO_3$ films. The (Ba,Sr)$TiO_3$ phase was appeared at the $BaTiO_3/SrTiO_3$ heterolayered thick films. The thickness of $BaTiO_3/SrTiO_3$ heterolayered thick film, obtained by one printing, was about $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ heterolayered thick films were about 1964, 5.5% at 1KHz, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.1-178.1
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• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• Journal of Korean Ophthalmic Optics Society
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• v.14 no.1
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• pp.57-62
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• 2009

Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The color and hardness of deposited TiN films was investigated. Methods: The cross sections of deposited films on silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS, the components of the inner parts of the films were observed by XPS depth profiling. XPS high resolution scans and curve fittings of deposited films were performed for quantitative chemical analysis, Vickers micro hardness measurements of deposited films were performed with a nano indenter equipment. Results: The colors of deposited films gradually changed from light gold to dark gold, light violet, and indigo color with increasing of the thickness. It could be seen that the color change come from the composite change of three compound,$TiO_{x}N_{y}$, $TiO_2$, TiN. Especially, the composite change of$TiO_{x}N_{y}$ compound was thought to affect the color change with respect to thickness. Conclusions: Deposited films had lower than the value of general TiN film in Vickers hardness, which was caused by mixing three TiN, $TiO_2$,$TiO_{x}N_{y}$ compound in the deposited films. The increasing and decreasing of micro hardness with respect to thickness was thought to have something to do with the composite of TiN in the films.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.140-148
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• 1995

Optical properties of $TiO_{2}$. Ag filrns and $TiO_{2}/Ag/TiO_{2}$ multilayer filrns with different thickness were predicted using the transfer matrix, and these results were compared with real transmittance curves of the sputterdeposited films. With the complex refractive indices, it was possible to predict transmittance characteristics which were close to real data for $TiO_{2}$ and Ag films. Due to the diffusion and agglomeration of Ag during $TiO_{2}$ deposition, optical properties of the sputterdeposited $TiO_{2}/Ag/TiO_{2}$ films were found to be very different from the transmittance curves predicted using the transfer matrix. Using deposition of 4nm-thick or 6nm-thick TI layers as a diffusion barrier, however, the transmittance curves of $TiO_{2}/Ti/Ag/Ti/TiO_{2}$ five-layer films became similar to ones predicted for $TiO_{2}/Ag/TiO_{2}$ threeiayer films.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1850-1852
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• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.6
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• pp.291-295
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• 2015

IGZO single layer and $IGZO/TiO_2$ bi-layered films were deposited on glass substrate at room temperature with radio frequency magnetron sputtering to investigate the effect of $TiO_2$ buffer layer on the electrical and optical properties of the films. For all deposition, the thickness of IGZO and $TiO_2$ Buffer layer was kept at 100 and 5 nm, respectively. In a comparison of figure of merit, IGZO films with a 5-nm-thick $TiO_2$ buffer layer show the higher figure of merit ($8.40{\times}10^{-5}{\Omega}^{-1}$) than that of the IGZO single layer films ($6.23{\times}10^{-5}{\Omega}^{-1}$) due to the enhanced optical transmittance and the decreased sheet resistance of the films. The observed results mean that a 5 nm thick $TiO_2$ buffer layer in the $IGZO/TiO_2$ films results in better electrical and optical performance than conventional IGZO single layer films.

• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1211-1216
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• 1999

TiO2 thin films were prepared by reactive magnetron sputtering on glass substrate and subjected into investigation about their hydrophilic properties. Varing Ar/O2 ration and post annealing at 50$0^{\circ}C$ for 12h anatase and rutile phases of TiO2 films were obtained. Hydrophilic properties were evaluated by determination of contact angle of water droplet on TiO2 surface. On as-annealed TiO2 films water droplet spreaded widely with ~0$^{\circ}$contact angle. Sonication(60 Hz, 28kHz 40kHz) and following dark room treatments turned these hydrophilic TiO2 films into hydrophobic state. All of hydrophobic films were converted recersibly into their original state after UV illumination. Hydrophobic states of anatase films were saturated after sonication and remain same during dark room treatment. But it was found that the conversion into hydrophobic state of rutile films progressed. further after sonication. Therefore it was concluded that Ti3+/Ti+4 ratio is the key to determine hydrophilicity of TiO2 surface so that different surface structure of polymorphs could lead to unique characteristics.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.210-213
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• 2005

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated by the screen printing method on alumina substrates. The effect of the sintering temperature on the microstructure and dielectric properties of the $BaTiO_3/SrTiO_3$ thick films has been investigated. The relative dielectric constant and dielectric loss at 1 MHz of the $BaTiO_3/SrTiO_3$ heterolayered thick films with sintering temperature of $1350^{\circ}C$ were about 751 and 1.74, respectively. The remanent polarization $(P_r)$ of the pure $(Ba_{0.5}Sr_{0.5})TiO_3$ and $BaTiO_3/SrTiO_3$ heterolayered films are approximately $5.1\;{\mu}C/cm^2$ and $10\;{\mu}C/cm^2$. This study suggests that the design of the $BaTiO_3/SrTiO_3$ heterolayered thick films capacitor with different phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.