• 제목/요약/키워드: Ti deposition

검색결과 1,341건 처리시간 0.027초

활성화 반응으로 제작된 TiO2의 박막특성 (Film Properties of TiO2 Made by Activated Reactive Evaporation)

  • 박용근;최재하
    • 열처리공학회지
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    • 제14권3호
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    • pp.151-154
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    • 2001
  • $TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

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AIP-TiN 코팅에서 증착시간이 SKH51과 SKD11 강의 표면특성에 미치는 영향에 관한 비교 연구 (Comparative Study on Effect of the Surface Characteristics of the SKH51 and SKD11 Steels with Deposition Times by AIP-TiN Coating)

  • 김해지;김남경
    • 한국기계가공학회지
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    • 제7권1호
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    • pp.67-74
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    • 2008
  • In this paper, the surface characteristics of the AIP-TiN coated of the SKH51 and SKD11 steels under various deposition times are presented with emphasis on the comparison of the two materials. The micro-particle, the surface roughness, the micro-hardness, the coated layer thickness, the atomic distribution of Ti, N and Fe elements and the adhesion are measured for various deposition times. It has been shown that the micro-particle, the surface roughness, the coated layer thickness and the atomic distribution of Ti, N and Fe elements are similar for the two cases regardless of the test deposition time from 10 to 180 minutes. However, it has been shown that the micro-hardness and the adhesion of the SKH51 steel are higher than the SKD11 steel, indicating that they are much affected by the hardness of the material to be coated.

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Aerosol Deposition 기술을 이용한 $TiO_2$ 코팅 기술

  • 윤석구
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.21.2-21.2
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    • 2011
  • 에어로졸 데포지션(Aerosol deposition) 기술은 상온에서 초음속 유동을 통해 분사된 미세 입자가 기판에 충돌하면서 강력한 결합을 형성하는 방식으로 코팅이 이루어진다. 이 방법은 별도의 소결과정 없이 상온에서도 조밀하고 균일한 박막을 형성할 수 있다. 또한 세라믹, 금속 재질의 다양한 입자를 사용할 수 있을 뿐만 아니라 금속, 유리 기판등에 적용이 가능하다. 본 논문은 이러한 에어로졸 데포지션 기술을 이용하여 광촉매 효과가 뛰어난 $TiO_2$ 입자를 대면적 코팅에 적용가능한 초음속 노즐을 통해 분사하여 ITO기판 위에 박막을 형성하였다. $TiO_2$ 입자의 크기, 기판의 이송 속도와 왕복횟수, 공급 유량 등이 코팅면의 특성과 조성 등에 미치는 영향을 분석하였다. $TiO_2$ 박막층의 형상과 두께는 주사전자현미경(SEM)을 통해 확인하였고, X-ray diffraction (XRD)를 이용하여 코팅 입자와 박막 층의 조성을 각각 확인하였다. 에어로졸 데포지션을 이용한 $TiO_2$ 코팅층은 염료감응형 태양전지(DSSC), 자정작용(self-cleaning), 살균작용(antibacterial effect) 등의 적용분야에 적용 가능할 것으로 판단된다.

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스퍼터링 증착에 의한 $PbTiO_3$ 박막제조시 증착변수의 영향 (Effects of Deposition Parameters on Sputter Deposition of Lead Titanate Thin Films)

  • 김상섭;강영민;백성기
    • 한국세라믹학회지
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    • 제30권7호
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    • pp.578-588
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    • 1993
  • Highly c-axis oriented ferroelectric PbTiO3 thin films were deposited on MgO single crystal substrates by RF magnetron sputtering. We have studied the effects of substrate temperature, RF input power, gas comosition, gas pressure and deposition rate on the chemical and structural characteristics of PbTiO3 thin films. The epitaxy relationship of c-axis oriented films was found to be PbTiO3{100}//MgO(100) and their microstructures were highly mosaic. It was found that the most important parameter to achieve epitaxial PbTiO3 films was the substrate temperature. The activation energy for the epitaxy formation was about 0.92eV. Lower gas pressure and RF input power were favorable for the formation of epitaxial c-axis orientation. It was also found that the optimum oxygen content in Ar gas was 10% to obtain the stoichiometric PbTiO3 composition.

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자외선 활성화 원자층 성장 기술을 이용한 상온에서 TiO2 박막의 제조 (Fabrication of TiO2 Thin Films Using UV-enhanced Atomic Layer Deposition at Room Temperature)

  • 이병훈;성명모
    • 한국진공학회지
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    • 제19권2호
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    • pp.91-95
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    • 2010
  • 상온에서 고품질의 $TiO_2$ 박막을 제조하기 위하여 titanium isopropoxide [Ti(OCH$(CH_3)_2)_4$, TIP]와 $H_2O$을 이용한 자외선 활성화 원자층 증착(UV-enhanced atomic layer deposition: UV-ALD) 기술을 개발하였다. UV-ALD 기술은 상온에서 자체제어 표면 반응(self-limitting surface reaction)을 통해 균일하고 고품위 등방 특성을 갖는 순수한 $TiO_2$ 박막 증착이 가능하였다. ALD 반응 시 조사되는 자외선은 Si 기질 위에 우수한 접착력을 가지는 고품질의 $TiO_2$ 박막을 얻는데 효과적이었다. UV-ALD 기술은 높은 단차비(aspect ratio)를 가지는 trench 기질 위에 균일한 $TiO_2$ 박막을 증착하는 데에 적용되었다.

$(Sr_{1-x}Ca_x)TiO_3$세라믹 박막의 미세구조 및 특성 (Microstructure and Properties of $(Sr_{1-x}Ca_x)TiO_3$Ceramic Thin film)

  • 김진사;이준웅
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권10호
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    • pp.504-508
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    • 2001
  • The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

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Biomimetic Deposition of Apatite on Zr-1Nb and Ti-6Al-4V

  • Kim, J.;Choi, Y.C.;Kim, H.S.;Hong, S.I.
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.1089-1090
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    • 2006
  • Biomimetic apatite deposition behaviors on Zr-1Nb and Ti-6Al-4V plate with various surface conditions were examined. Both alloys were polished with abrasive papers to have different roughness and some of them were treated in NaOH before exposition in simulated body fluid. NaOH treatment was found to enhance the deposition rate of apatite on Ti-6Al-4V significantly. On the other hand, the deposition rate of Zr-1Nb was not influenced by NaOH treatment. Without NaOH treatment, the polished Zr-1Nb with abrasive paper was found to induce more apatite nucleation than the polished Zr-6Al-4V.

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화학증착법에 의한 $PbTiO_3$ 박막의 재료 (Fabrication of $PbTiO_3$ Thin Film by Chemical Vapor Deposition Technique)

  • 윤순길;김호기
    • 한국세라믹학회지
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    • 제23권6호
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    • pp.33-36
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    • 1986
  • The $PbTiO_3$is well known materials having remarkable ferroelectric piezoelectric and pyro-electric properties. Thin films of the lead titanite has been successfully fabricated by Chemical Vapor Deposition on the borosilicate glass and titanium substrate. The $PbTiO_3$ thin film deposited on the borosilicate glass using the $PbCl_2$, $TiCl_4$ dry oxygen and wet oxygen at different temperatures (50$0^{\circ}C$-$700^{\circ}C$) grows along the (001) preferred orientation. On the other hand the $PbTiO_3$ thin film deposited on the titanium substrate using the PbO grows along the (101) preferred orientation. Growth orientation of deposited $PbTiO_3$ depends on the reaction species irrespective of substrate materials. Maximum dielectic constant and loss tangent of the $PbTiO_3$ thin film deposited on the titanium substrate are about 90 and 0.02 respectively, . Deposition rates of $PbTiO_3$ deposited on the borosilicate glass and titanium substrate are 10-15 ${\mu}{\textrm}{m}$/hr. Titanium dioxide interlayer formed be-tween $PbTiO_3$ film and titanium substrate material, It improved the adhesion of the film.

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$BNdT(Bi_{3.25}Nd_{0.75}Ti_{3}O_{12})$ 강유전 박막 성장거동에 미치는 증착온도의 영향 (The Effects of Deposition Temperature on the Growth Behavior of the $BNdT(Bi_{3.25}Nd_{0.75}Ti_{3}O_{12})$ Ferroelectric Thin Films)

  • 권현율;남성필;김정훈;이성갑;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.176-178
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    • 2005
  • Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_{3}O_{12}(BNdT)$ thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying deposition temperatures. Increasing deposition temperature, the (117) peak was increased. An increase of columnar and recrystalline structure of BNdT films with increasing deposition temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with deposition temperature of $600^{\circ}C$ were 319 and 0.05, respectively.

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TiN피막의 경도 및 구조적 특성에 미치는 화학증착 조건의 영향 (Effects of Chemical Vapor Deposition Parameters on The Hardness and the Structural Characteristics of TiN Film)

  • 신종훈;이성래;백영현
    • 한국표면공학회지
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    • 제20권3호
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    • pp.106-117
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    • 1987
  • The microhardness and the structural characteristics of the chemically vapor deposited TiN film on the 430 stainless steel substrate have been investigated with various deposition parameters such as the deposition time, the total flow rate, the flow rate ratio $(H_2/N_2)$, and the deposition temperature. The most important factor to affect the microhardness of the TiN film in this study was the denseness of the structure in connection with the degree of the lattice strain. The relationship between the lattice parameter changes and the grain size variation under all deposition conditions generally followed the grain boundary relaxation model. The (111) preferred orientation prevailed in the early stage of the deposition conditions, however, the (200) preferred orientation was developed in the later stage. The surface morphology at optimum conditions displayed a dense diamond shaped structure and the microhardness of the films was high (1700-2400Hv) regardless of the type of the substrates used.

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