• Journal of the Korean institute of surface engineering
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• v.22 no.1
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• pp.17-25
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• 1989

The structural Charactesties and adhesion of chemically vapor deposited TiN film on stain less steels have been investated as functions of deposition temperature, surface roughness of sub state, and types of substrates. The grain zine and the lattice parameter of TiN film decreased with decreasing roughness of substates. The(200) preferred orientation was developed dominatly and the lattlice parameter decreased as temperature intereased reardless of the surdless roughnessand type of the substrates used. The surface morphology of TiN film changed from bushed crystal to a plate and then to pyamidal dense crystals with an increase in the deposition temperature. The adhesion of TiN films increased with coating thinkness and decreased with surface roughness in general. The calculations using a Bejamin & Weaver's model have been compard. Maximum valuse of adhesion energy calculated using Laguier's model were W304=331Jm-2,w410=113Jm-2,andW430=107jm-2

• Environmental Engineering Research
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• v.7 no.4
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• pp.227-237
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• 2002

Chemical vapor deposition (CVD), ion beam sputtering (IBS) and sol-gel method were used to prepare TiO$_2$ thin films for degradation of hazardous organic compounds exemplified by 2-chlorophenol (2-CP). The influence of supporting materials and coating methods on the photocatalytic activity of the TiO$_2$ thin films were also studied. TiO$_2$ thin films were coated onto various supporting materials including steel cloth (SS), copper cloth, quartz glass tube (QGT), and silica gel (SG). Results indicate that SS (37 μm)- TiO$_2$ thin film prepared by IBS method improves the photodegradation of 2-CP. Among all supporting materials studied, SS(37 μm) is found to be the best support.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.436-437
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• 2006

The $Ag/TiO_{2-x}N_x$ nanoparticles were synthesized by photochemical deposition in a $TiO_{2-X}N_X$ suspension system. The prepared products were characterized by means of XRD, Uv-vis and photoluminescence spectra (PL). Its photocatalytic activity was investigated by the decomposition of methylene blue (MB) solution under illumination of visible and ultraviolet light, respectively. Compared to $TiO_{2-x}N_x$, the photocatalytic activity of the as-prepared $Ag/TiO_{2-x}N_x$ is obviously enhanced due to the decreasing recombination of a photoexcitated electron-hole pairs. The Mechanism in which photocatalytic activity is enhanced has been discussed in detail.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.87-95
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• 2023

TiO₂ thin films were grown using the Atomic Layer Deposition (ALD) and their structural and electrical properties were investigated. The crystal structure, dielectric constant, and surface roughness of the TiO₂ thin films grown by the ALD deposition method were studied. The grown TiO₂ thin films showed an anatase crystal structure, and their properties varied with temperature. In particular, the properties of the TiO₂ thin films were confirmed by changing the process temperature. The electrical properties of Metal-Insulator-Silicon (MIS) capacitor structures were analyzed using a probe station. The performance improvement of capacitors using TiO₂ as a dielectric was confirmed by measuring capacitance through Capacitance-Voltage (C-V) curves.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.288-288
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• 2013

We report the catalytic activity of Au/$TiO_2$ and Pt/$TiO_2$ nanocatalysts under CO oxidation fabricated by arc plasma deposition (APD), which is a facile dry process with no organic materials involved. Using APD, the catalyst nanoparticles were well dispersed on $TiO_2$ powder with an average particle size (2~4 nm) well below that of nanoparticles prepared by the sol-gel method (10 nm). We found that the average particle size of the dispersed gold nanoparticles can be controlled by changing the plasma discharge voltage of APD. Accordingly, the amount of loaded gold on the $TiO_2$ powder increased with increasing discharge voltage, but the specific surface area of the Au/$TiO_2$ samples decreased. As for catalytic reactivity, Au/$TiO_2$ showed a higher catalytic activity than Pt/$TiO_2$ in CO oxidation. The catalytic activity of the Au/$TiO_2$ samples showed size dependence where higher catalytic activity occurred on smaller gold nanoparticles. The study suggests that APD is a simple way to fabricate catalytically active nanocatalysts.

• Korean Journal of Optics and Photonics
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• v.8 no.5
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• pp.382-386
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• 1997

The composite $MgF_2$-$TiO_2$ films are fabricated by codeposition from two independent sources. To improve optical and mechanical properties of films, the films are prepared by ion-assisted deposition. Chemical compositions, optical properties and microstructures of the composite films were investigated. The chemical composition rates of Ti:Mg of $MgF_2$-$TiO_2$ composite films are nonlinearly varied according to the relative deposition rate. It is found that the refractive indices of the composite films decrease with increasing $MgF_2$ contents and can be fitted quite well with Drude's formula and that the microstructures of the composite films changes from an amorphous to crystalline with increasing $MgF_2$ mole fractions.

• Metals and materials international
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• v.24 no.6
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• pp.1213-1220
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• 2018

The effects of Cr and Fe addition on the mechanical properties of Ti-6Al-4V alloys prepared by direct energy deposition were investigated. As the Cr and Fe concentrations were increased from 0 to 2 mass%, the tensile strength increased because of the fine-grained equiaxed prior ${\beta}$ phase and martensite. An excellent combination of strength and ductility was obtained in these alloys. When the Cr and Fe concentrations were increased to 4 mass%, extremely fine-grained martensitic structures with poor ductility were obtained. In addition, Fe-added Ti-6Al-4V resulted in a partially melted Ti-6Al-4V powder because of the large difference between the melting temperatures of the Fe eutectic phase (Ti-33Fe) and the Ti-6Al-4V powder, which induced the formation of a thick liquid layer surrounding Ti-6Al-4V. The ductility of Fe-added Ti-6Al-4V was thus poorer than that of Cr-added Ti-6Al-4V.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.371-378
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• 1996

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.116-121
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• 2007

TiNi shape memory alloy(SMA) was fabricated by PLD(plused laser deposition) using equiatomic TiNi target. Composition and crystallization of TiNi thin films which were fabricated in ambient Ar gas(200m Torr)and vacuum($5{\times}10^{-6}\;Torr$) were investigated. Composition of TiNi thin films was characterized by energy-dispersive X-ray spectrometry (EDXS) and crystallization was confirmed by X-ray diffraction (XRD). The composition of films depends on the distance between target and substrate but does not sensitively depend on the substrate temperature. It is found that the composition of films can be easily controlled when substrate is placed inside plume in ambient Ar gas. It is also found that the in situ crystallization temperature ($ca.\;400^{\circ}C$) in ambient Ar gas is lowered in comparison with that of TiNi film prepared under vacuum. The low crystallization temperature in ambient Ar gas makes it possible to prepare the crystalline TiNi thin film without contamination.