• 한국지형학회지
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• 제23권3호
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• pp.41-55
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• 2016

The granulometric characteristics and chemical composition of the samples from the Bukpyeong myeon, Hainam gun, Jeollanam do were analyzed in this study. The samples were collected from the outcrop of coastal area where the height is about 30m. The burial age of the sediments also estimated by OSL(Optically Stimulated Luminescence) method. The origin and forming processes of the samples are not clear in this stage as limited number of evidences can be found. However it is suggested that the samples are not aeolian deposits originated from chinese loess by the chemical analysis. The mean diameter of samples were $5{\sim}6{\varphi}(silt)$ and are increased slightly downwards. The samples also well sorted. The samples have been heavily weathered by the chemical alteration index. The value of CIA increase downward rapidly at the upper part of outcrop, then stabilized afterwards. The vertical concentration changes ratio of cations varies; Si increases downwards while Fe, Ti, K and Mg decrease. There are fluctuation in concentration ratio of Na and Ca with increasing depth. The burial age of sample from upper part are estimated as $104.52{\pm}4.45ka\;BP$, while that of lower part are $136.10{\pm}6.52ka\;BP$, and they fall in to last part of MS6. The deposition rate for this site is found about 0.017mm/year. The uplift rate of the site is supposed to be 0.24~0.26m/ka with assumption of palaeo-sea level of +6m. However the origin of the sediment deposits should be explored and cleared.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2012년도 임시총회 및 하계학술연구발표회
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.

• Current Photovoltaic Research
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• 제7권1호
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• pp.9-14
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• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.417-417
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• 2016

Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.

• Progress in Superconductivity
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• 제5권1호
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• pp.50-54
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• 2003

We have fabricated $∂^2$$B_{z}$ /$∂x^2$ type planar gradiometers and studied their properties in operation under various field conditions. $YBa_2$$Cu_3$$O_{7}$ film was deposited on $SrTiO_3$ (100) substrate by a pulsed laser deposition (PLD) system and patterned into a device by the photolithography with ion milling technique. The device consists of 3 pickup loops designed symmetrically Inner dimension and the width of the square side loops are 3.6 mm and 1.2 mm, respectively, and the corresponding dimensions of the center loop are 2.0 mm and 1.13 mm. The length of baseline gradiometer is 5.8 mm. Step-edge junction width is 3.0 $\mu\textrm{m}$ and the hole size of the SQUID loop is 3 $\mu\textrm{m}$ ${\times}$ 52 $\mu\textrm{m}$. The SQUID inductance is estimated to be 35 pH. The device was formed on a 20 mm ${\times}$ 10 mm substrate. We have tested the behavior of the device in various field conditions. The unshielded gradiometer was stable under extremely hostile conditions on a laboratory bench. Noise level 0.45 pT/$\textrm{cm}^2$/(equation omitted)Hz and 0.84 pT/$\textrm{cm}^2$/(equation omitted)Hz at 1 Hz for the shielded and the unshielded cases, which correspond to equivalent field noises of 150 fT/(equation omitted)Hz and 280 fT/(equation omitted)Hz, respectively. In spite of the short baseline of 5.8 mm, the high common-mode-rejection-ratio of the gradiometer, $10^3$, allowed us to successfully record magnetocardiogram of a human subject, which demonstrates the feasibility of the design in biomagnetic studies.

• 대한치과보철학회지
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• 제42권3호
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• pp.307-326
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• 2004

Statement of problem. The long-term success of implants is the development of a stable direct connection between bone and implant surface, which must be structural and functional. To improve a direct implant fixation to the bone, various strategies have been developed focusing on the surface of materials. Among them, altering the surface properties can modify cellular responses such as cell adhesion, cell motility and bone deposition. Purpose. This study was to evaluate the cellular behaviors on the surface-modified titanium by morphological observation, cellular proliferation and differentiation. Material and methods. Specimens were divided into five groups, depending on their surface treatment: electropolishing(EP) anoclizing(AN), machining(MA), blasting with hydroxyapatite particle(RBM) and electrical discharge machining(EDM). Physicochemical properties and microstructures of the specimens were examined and the responses of osteoblast-like cells were investigated. The microtopography of specimens was observed by scanning electron microscopy(SEM). Surface roughness was measured by a three-dimensional roughness measuring system. The microstructure was analyzed by X-ray diffractometer(XRD) and scanning auger electron microscopy(AES). To evaluate cellular responses to modified titanium surfaces, osteoblasts isolated from neonatal rat were cultured. The cellular morphology and total protein amounts of osteoblast-like cell were taken as the marker for cellular proliferation, while the expression of alkaline phosphatase was used as the early differentiation marker for osteoblast. In addition, the type I collagen production was determined to be a reliable indicator of bone matrix synthesis. Results. 1. Each prepared specimen showed specific microtopography at SEM examination. The RBM group had a rough and irregular pattern with reticulated appearance. The EDM-treated surface had evident cracks and was heterogeneous consisting of broad sheet or plate with smooth edges and clusters of small grains, deep pores or craters. 2. Surface roughness values were, from the lowest to the highest, electropolished group, anodized group, machined group, RBM group and EDM group. 3. All groups showed amorphous structures. Especially anodized group was found to have increased surface oxide thickness and EDM group had titaniumcarbide(TiC) structure. 4. Cells on electropolished, anodized and machined surfaces developed flattened cell shape and cells on RBM appeared spherical and EDM showed both. After 14 days, the cells cultured from all groups were formed to be confluent and exhibited multilayer proliferation, often overlapped or stratified. 5. Total protein amounts were formed to be quite similar among all the group at 48 hours. At 14 days, the electropolished group and the anodized group induced more total protein amount than the RBM group(P<.05). 6. There was no significant difference among five groups for alkaline phosphatase(ALP) activity at 48 hours. The AN group showed significantly higher ALP activity than any other groups at 14 days(P<.05). 7. All the groups showed similar collagen synthesis except the EDM group. The amount of collagen on the electropolished and anodized surfaces were higher than that on the EDM surface(P<.05).

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.83-83
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• 2012

금속 실리사이드는 낮은 비저항, 실리콘과의 좋은 호환성 등으로 배선 contact 물질로 널리 연구되고 있다. 특히 $CoSi_2$는 선폭의 축소와 관계없이 일정하고 낮은 비저항과 열적 안정성이 우수한 특성 등으로 배선 contact 물질로 활발히 연구되고 있다. 금속 실리사이드를 실리콘 평면기판에 형성시키는 방법으로는 열처리를 통한 금속박막과 실리콘 기판 사이에 확산작용을 이용한 SALICIDE (self-algined silicide) 기술이 대표적이며 CoSi2도 이와 같은 방법으로 형성할 수 있다. Co 박막을 증착하는 방법에는 물리적 기상증착법 (PVD)과 유기금속 화학 증착법 등이 보고되어있지만 최근 급격하게 진행 중인 소자구조의 나노화 및 고 단차화에 따라 기존의 증착 기술은 낮은 단차 피복성으로 인하여 한계에 부딪힐 것으로 예상되고 있다. ALD(atomic layer deposition)는 뛰어난 단차 피복성을 가지고 원자단위 두께조절이 용이하여 나노 영역에서의 증착 방법으로 지대한 관심을 받고 있다. 앞선 연구에서 본 연구진은 CoCp2 전구체과 $NH_3$ plasma를 사용하여 Plasma enhanced ALD (PE-ALD)를 이용한 고 순도 저 저항 Co 박막 증착 공정을 개발 하고 이를 SALICIDE 공정에 적용하여 $CoSi_2$ 형성 연구를 보고한 바 있다. 하지만 이 연구에서 PE-ALD Co 박막은 플라즈마 고유의 성질로 인하여 단차 피복성의 한계를 보였다. 이번 연구에서 본 연구진은 Co(AMD)2 전구체와 $NH_3$, $H_2$, $NH_3$ plasma를 반응 기체로 사용하여 Thermal ALD(Th-ALD) Co 및 PE-ALD Co 박막을 증착 하였다. 고 단차 Co 박막의 증착을 위하여 Th-ALD 공정에 초점을 맞추어 Co 박막의 특성을 분석하였으며, Th-ALD 및 PE-ALD 공정으로 증착된 Co 박막의 단차를 비교하였다. 연구 결과 Th-ALD Co 박막은 95% 이상의 높은 단차 피복성을 가져 PE-ALD Co 박막의 단차 피복성에 비해 크게 향상되었음을 확인하였다. 추가적으로, Th-ALD Co 박막에 고 단차 박막의 증착이 가능한 Th-ALD Ru을 capping layer로 이용하여 CoSi2 형성을 확인하였고, 기존의 PVD Ti capping layer와 비교하였다. 이번 연구에서 Co 박막 및 $CoSi_2$ 의 특성 분석을 위하여 X선 반사율 분석법 (XRR), X선 광전자 분광법 (XPS), X선 회절 분석법 (XRD), 주사 전자 현미경 (SEM), 주사 투과 전자 현미경 (STEM) 등을 사용하였다.

• 생명과학회지
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• 제27권7호
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• pp.760-766
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• 2017

본 연구는 Lysophospholipase I (LYPLA1) 유전자의 SNP 마커인 rs385360448 g.23655332G>C의 유전자형이 제주도 한우와 제주흑한우(한우${\times}$제주흑우, JCC) 집단의 도체형질에 미치는 영향을 시험하였다. 한우 거세우 집단에서 LYPLA1 rs385360448 G/-를 보유한 도체는 C/C 동형접합에 비해 유의적으로 높은 수준의 근내지방도(MARB)와 조직감지수(TI)를 나타내었다(p<0.05). 반면, LYPLA1 유전자형은 도체중, 등지방두께, 등심단면적, 육색, 지방색에서는 유의적인 차이를 보이지 않았다(p>0.05). JCC 거세우에서는 LYPLA1 G/- 도체에서 C/C 동형접합에 비해 등심단면적(EMA)의 수준이 유의적으로 더 높았다(p<0.05). 이번 연구의 결과들은 LYPLA1 유전자형이 소의 등심에서 인지질 대사를 통해 근내지방도와 조직감의 수준과 등심단면적의 수준을 변화시킬 수 있음을 보여주고 있다. 이러한 결과들은 LYPLA1 유전자형이 한우와 제주흑우-유래의 산업화축군에서 도체형질을 개선할 수 있는 유전자 마커로써의 기능을 수행할 수 있을 것으로 기대된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.84-84
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• 2012

소자가 고집적화 됨에 따라, 비저항이 낮고 electro migration (EM), Stress Migration (SM) 특성이 우수한 구리(Cu)를 배선재료로서 사용하고 있다. 그러나, 구리는 Si과 $SiO_2$의 내부로 확산이 빠르게 일어나, Si 소자 내부에 deep donor level을 형성하고, 누설 전류를 증가시키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 그러나, electroplating 을 이용하여 증착한 Cu 박막은 일반적으로 확산 방지막으로 쓰이는 TiN, TaN, 등의 물질과의 접착 (adhesion) 특성이 나쁘다. 따라서, Cu CMP 에서 증착된 Cu 박막의 벗겨지거나(peeling), EM or SM 저항성 저하 등의 배선에서의 reliability 문제를 야기하게된다. 따라서 Cu 와 접착 특성이 좋은 새로운 확산방지막 또는 adhesion layer의 필요성이 대두되고 있다. 본 연구에서는 이러한 Cu 배선에서의 접착성 문제를 해결하고자 Metal organic chemical vapor deposition (MOCVD)을 이용하여 제조한 코발트(Co) 박막을 $Cu/TaN_x$ 사이의 접착력 개선을 위한 adhesion layer로 적용하려는 시도를 하였다. Co는 비저항이 낮고, Cu 와 adhesion이 좋으며, Cu direct electroplating 이 가능하다는 장점을 가지고 있다. 하지만, 수소 분위기에서 $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) 전구체에 의한 MOCVD Co 박막의 경우 탄소, 산소와 같은 불순물이 다량 함유되어 있어, 비저항, surface roughness 가 높아지게 된다. 따라서 구리 전착 초기에 구리의 핵 생성(nucleation)을 저해하고 핵 생성 후에도 응집(agglomeration)이 발생하여 연속적이고 얇은 구리막 형성을 방해한다. 이를 해결하기 위해, MOCVD Co 박막 증착 시 수소 반응 가스에 암모니아를 추가로 주입하여, 수소/암모니아의 분압을 1:1, 1:6, 1:10으로 변화시켜 $Co/TaN_x$ 박막의 특성을 비교 분석하였다. 각각의 수소/암모니아 분압에 따른 $Co/TaN_x$ 박막을 TEM (Transmission electron microscopy), XRD (X-ray diffraction), AES (Auger electron spectroscopy)를 통해 물성 및 조성을 분석하였고, AFM (Atomic force microscopy)를 이용하여, surface roughness를 측정하였다. 실험 결과, $Co/TaN_x$ 박막은 수소/암모니아 분압 1:6에서 90 ${\mu}{\Omega}-cm$의 낮은 비저항과 0.97 nm 의 낮은 surface roughness 를 가졌다. 뿐만 아니라, MOCVD 에 의해 증착된 Co 박막이4-6 % concentration 의 탄소 및 산소 함량을 가지는 것으로 나타났고, 24nm 크기의 trench 기판 위에 약 6nm의 $Co/TaN_x$ 박막이 매우 균일하게 형성된 것을 확인 할 수 있었다. 이러한 결과들은, 향후 $Co/TaN_x$ 박막이 Cu direct electroplating 공정이 가능한 diffusion barrier로서 성공적으로 사용될 수 있음을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.62-62
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• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.