• Title/Summary/Keyword: Ti/Au

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Direct Synthesis of H2O2 over Ti-Containing Molecular Sieves Supported Gold Catalysts: A Comparative Study for In-situ-H2O2-ODS of Fuel

  • Zhang, Han;Liu, Guangliang;Song, Haiyan;Chen, Chunxia;Han, Fuqin;Chen, Ping;Zhao, Zhixi;Hu, Shaozheng
    • Bulletin of the Korean Chemical Society
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    • v.34 no.10
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    • pp.3065-3072
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    • 2013
  • Direct synthesis of $H_2O_2$ and in situ oxidative desulfurization of model fuel over Au/Ti-HMS and Au/TS-1 catalysts has been comparatively investigated in water or methanol. Maximum amount (82%) of active $Au^0$ species for $H_2O_2$ synthesis was obtained. Au/Ti-HMS and Au/TS-1 exhibited the contrary performances in $H_2O_2$ synthesis as $CH_3OH/H_2O$ ratio of solvent changed. $H_2O_2$ decomposition and hydrogenation in water was inhibited by the introduction of methanol. Effect of $O_2/H_2$ ratio on $H_2O_2$ concentration, $H_2$ conversion and $H_2O_2$ selectivity revealed a relationship between $H_2O_2$ generation and $H_2$ consumption. The highest dibenzothiophene removal rate (83.2%) was obtained over Au/Ti-HMS in methanol at 1.5 of $O_2/H_2$ ratio and $60^{\circ}C$. But removal of thiophene over Au/TS-1 should be performed in water without heating to obtain a high removal rate (61.3%). Meanwhile, $H_2$ conversion and oxidative desulfurization selectivity of $H_2$ were presented.

Fabrication of a Au/Ni/Ti/3C-SiC Schottky Diode and its Characteristics for High-voltages (고내압용 Au/Ni/Ti/3C-SiC 쇼트키 다이오드의 제작과 그 특성)

  • Shim, Jae-Cheol;Chung, Gwiy-Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.4
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    • pp.261-265
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    • 2011
  • This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to $800^{\circ}C$. At annealing temperature of $600^{\circ}C$, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of $800^{\circ}C$ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at $200^{\circ}C$.

Characteristics of $YBa_2Cu_3O_{7-x}$ Thin Films on $SrTiO_3$ substrate with surface modification by Au nanoparticles (STO기판에 금 나노입자가 분산된 YBCO 박막의 특성)

  • Oh, Se-Kweon;Jang, Gun-Eik;Tran, Hai Duc;Kang, Byoung-Won;Lee, Cho-Yeon;Hyun, Ok-Bae
    • Progress in Superconductivity and Cryogenics
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    • v.12 no.3
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    • pp.7-11
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    • 2010
  • For many large-scale applications of high-temperature superconducting materials, large critical current density($J_c$) in high applied magnetic fields are required. A number of methods have been reported to introduce artificial pinning centers(APCs) in $YBa_2Cu_3O_{7-\delta}$(YBCO) films for enhancement of their $J_c$. In this work, we investigated electric characteristic of YBCO films on $SrTiO_3$ (100) substrates whose surfaces were modified by the introduction of Au nanoparticles (AuNPs). Au nanoparticles were uniformly dispersed on STO substrates with one of typical solution techniques, self assembled monolayer. After heating the STO substrates with Au nanoparticles, the size of Au nanoparticles was around 29~32 nm in height and 41~49 nm in diameter. XRD diffraction patterns taken on the YBCO film with Au nanoparticles show the c-axis orientation. The measured $T_c$ of YBCO /AuNPs films was around 89K and the $J_c$ was 0.75 MA/$cm^2$ at 65 K and 1 T.

Pd/Ge/Pd/Ti/Au Ohmic Contact for Application to AlGaAs/GaAs HBT (AIGaAs/GaAs HBT 응용을 위한 Pd/Ge/Pd/Ti/Au 오믹 접촉)

  • 김일호;박성호(주)가인테크
    • Journal of the Korean Vacuum Society
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    • v.11 no.1
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    • pp.43-49
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    • 2002
  • Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $1.1\times10^{-6}\Omega\textrm{cm}^2$ was achieved after annealing at $400^{\circ}C$/10sec, and a ohmic performance was degraded at higher annealing temperature due to the chemical reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact($high-10^{-6};{\Omega}\textrm{cm}^2$) were maintained. This ohmic contact system is expected to be a promising candidate for compound semiconductor devices.

Comparative studies of ohmic metallization on p-GaAsSb (금속에 따른 p-GaAsSb 오믹접촉의 전기적 특성에 관한 비교 연구)

  • Cho, Seung-Woo;Jang, Jae-Hyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.33-36
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    • 2004
  • 탄소 도핑$(5{\times}10^{19}\;cm^{-3})$된 p-type GaAsSb 에피층 위에, Ti/Pt/Au, Pd/Au, Pd/Ir/Au를 이용한 다층 오믹 접촉을 제작하였다. MOCVD(metal-organic chemical vapor deposition)를 이용하여 성장시킨 이 p-GaAsSb의 정공 이동도는 탄소의 도핑 농도가 매우 높음에도 불구하고, $50\;cm^2/Vs$로 측정되었다. 오믹 접촉의 전기적 특성을 측정하기 위하여 TLM(Transfer length method)를 이용하였다. Pd/Ir/Au을 이용한 오믹접촉의 specific contact resistivity는 $10^{-8}\;ohm-cm^2$ 보다 작은 수치를, transfer length는 100 nm보다 작은 수치를 보였으며, Ti/Pt/Au을 이용한 ohmic contact의 specific contact resistivity는 $10^{-7|\;ohm-cm^2$ 보다 작은 수치를, transfer length는 400 nm보다 작은 수치를 나타내었다.

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Thermally Stable Ohmic Contacts for High Electron Mobility Transistors (High Electron Mobility Transistor 소자의 고 내열성)

  • Kim, Yeong-Jung;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.7 no.5
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    • pp.390-396
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    • 1997
  • AIGaAs/InGaAs/GaAs high electron mobility transisters(HEMT)소자의 오믹 접합재료로 일반적으로 사용되고 있는 AuGeNi의 접합저항과 열적 안정성을 향상시키기 위한 새로운 접합재료에 대해 연구하였다. 이를 위해 sub/M$_{1}$Au-Ge/M$_{2}$Au의 구조에서 M$_{1}$을 Ni과 Pd, M$_{2}$를 Ni, Ti, Mo로 하였을 경우의 접합 재료에 대한 오믹 접합 특성의 변화를 조사하였다. 또한 일반 열처리로와 램프 히터를 이용한 고속 열처리에 따른 오믹 특성을 조사하였다. M$_{1}$을 Ni에서 Pd으로 대체하였을 경우 접합 저항은 약간 증가하였으며 접합 특성의 개선을 관찰되지 않았다. M$_{2}$를 Ni에서 Ti이나 Mo로 대치하였을 경우, 접합 저항은 감소하였고 열적 안정성과 접합 형상은 현저히 개선되었다. 특히 Ni/Au-Ge/Mo/Au의 접합재료는 급속 열처리에 의해 -0.1Ωmm의 극히 낮은 잡합 저항과 우수한 접합 형상을 갖는 것으로 조사되었다.

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Catalytic Reactions of Ethanol and Acetaldehyde Over $TiO_2$-supported Gold Catalysts

  • Kim, Jeong-Jin;Kim, Yu-Gwon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.264-264
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    • 2012
  • As an environment-friendly alternative energy resource, ethanol may be used to obtain hydrogen, a clean energy source. Thus, studies on catalytic reactions involving ethanol have been studied to understand the underlying principles in the reaction mechanism using various oxide-supported catalysts. Among them, Au-based catalysts have shown a superior activity in producing hydrogen gas. In the present study, Au/$TiO_2$ catalysts were prepared by deposition-precipitation method to understand their catalytic activities toward ethanol and acetaldehyde with increasing gold loading, especially at the very low Au loading regime. A commercially available $TiO_2$ (Degussa P-25) was employed and the Au loading was varied to 0, 0.1, 0.5, and 1.0 wt% respectively. The catalysts showed characteristic x-ray diffraction (XRD) features at $2{\theta}=78.5^{\circ}$ that could be assigned to the presence of gold nanoparticles. Its reactivity measurements were performed under a constant flow of ethanol and acetaldehyde at a flow rate of ${\sim}0.6{\mu}mol/sec$ and the substrate temperature was slowly raised at a rate of 0.2 K/sec. We observed that the overall reactivity of the catalysts increased with increasing Au loading along with selectivity favoring dehydrogenation to product hydrogen gas. In addition, we disclosed various reaction channels involving competitive reaction paths such as dehydrogenation, dehydration, and condensation. In addition, subsequent reactions of acetaldehyde obtained from dehydrogenation of ethanol, were found to occur and produce butene, crotonaldehyde, furan, and benzene. Based on the results, we proposed overall reaction pathways of such reaction channels.

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The Effect of a Au Based Bonding Agent Coating on Non-Precious Metals-Ceramic Bond Strength (비귀금속 합금에 적용한 Au Based Bonding Agent가 금속-도재 결합에 미치는 영향)

  • Lee, Jung-Hwan;Ahn, Jae-Seok
    • Journal of dental hygiene science
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    • v.9 no.4
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    • pp.405-412
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    • 2009
  • The purpose of this study investigated the effect of Au coating on adhesion between porcelain matrix and metal substructure interface. Titanium, Ni-Cr alloy and Co-Cr alloy are well known as proper metal for the dental restorations. The success of a porcelain fused to metal (PFM) restoration depends upon the quality of the porcelain-metal bond. However, adhesion between dental alloys and porcelain is related to diffusion of oxygen during ceramic firing. The excessive oxidized layers make hard adhesion between dental alloy and ceramic. Ni-Cr and Co-Cr specimens were divided into test and a control group and Titanium specimens were divided into three test groups and a control group. Each group had 20 specimens. The adhesion characteristics of porcelain and metal with Au coating layer and without Au coating layer were observed with scanning electron microscopy(SEM). The adhesion was evaluated by a biaxial flexure test and volume fraction of adherent porcelain was determined by SEM/EDS analysis. Result of this study suggest that Au coating layer is effective barrier to diffuse oxide layer completely protect non-precious alloys from oxidation during the porcelain firing. The SEM photomicrographs of cross-section specimens showed a smooth interface between Au coating layer and metals and porcelain which suggested proper chemical bonding, and no gap, porosity were observed. The mode of failure was mainly adhesive for Ti tested specimens, but mixed failures with adhesive and cohesive were observed in Ni-Cr and Co-Cr specimens. The adhesion between non-precious metals and porcelain would not be improved by Au coating agent. However, It is suggested that the continuous study is required further investigation and development.

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