• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.192-192
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• 2014

TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막을 제조한 후, 이 들의 고온산화 특성을 SEM, EPMA, TGA, TEM, AES 등을 이용하여 조사하고, 산화기구를 제안하였다. 산화속도, 생성되는 산화물의 종류와 분포는 박막의 조성, 산화온도, 산화시간에 따라 변하였다.

• Tribology and Lubricants
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• v.4 no.2
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.3
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• pp.1253-1258
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• 2014

The tribological properties of TiC, TiN and TiC/TiN coatings on steels prepared by the cathodic-arc (CA) ion plating technique were investigated. Experiments were carried out on a tribo-test machine using a Falex journal V block system. The friction and wear characteristics of the coatings were determined by varying the applied load and sliding speed. The TiC, TiN and TiC/TiN coatings markedly increased the tribological characteristics of the surface. As far as a single layer coating was concerned, TiN goes better results than TiC. However, the TiC/TiN multilayer coating performed better than either single layer coating. The major factor in the improved performance of the multilayer coating was the role of TiC in improving the adhesion between the external TiN layer and the substrate steel.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.603-608
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• 2017

$Si_3N_4$ is a ceramic material attracting attention in many fields because of its excellent abrasion resistance. In addition, Ti and TiAl alloys are metals used in a variety of high temperature environments, and have attracted much attention because of their high strength and high melting points. Therefore, study of the interface reaction between $Si_3N_4/Ti$ and $Si_3N_4/TiAl$ can be a useful practice to identify phase selection and diffusion control. In this study, $Si_3N_4/Ti_5Si_3+TiN/TiN/Ti$ diffusing pairs were formed in the $Si_3N_4/Ti$ interfacial reaction and $Si_3N_4/TiN(Al)/Ti_3Al/TiAl$ diffusion pathway was identified in the $Si_3N_4/TiAl$ interfacial reaction. The diffusion layers of the interface reactions were identified and, to investigate the kinetics of the diffusion layer, the integrated diffusion coefficients were estimated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.119-120
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• 2013

공구, 다이몰드 등에 널리 쓰이는 TiC, TiN, CrN, TiCrN, TiAlN 코팅의 산화특성을 비교하기 위하여 $600^{\circ}C-900^{\circ}C$에서 대기중 산화시험을 실시하였다. 내산화성은 (TiC, TiN), TiAlN, TiCrN, CrN 코팅의 순서로 증가하였다. 코팅원소중 Ti는 $TiO_2$로, Cr은 $Cr_2O_3$로, Al은 $Al_2O_3$로 산화되었다.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.5
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• Journal of Surface Science and Engineering
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• v.35 no.6
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• pp.408-414
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• 2002

TiN and TiAlN coating layer were deposited on WC-Co steel substrates by an arc ion plating(AIP) technique. The crystallinity and morphology for the deposited coating layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The impact behaviors of the deposited TiN and TiAlN coating layer were investigated with a ball-on-plate impact tester. Beyond $10^2$ impact cycle, TiAlN coating layer showed superior impact wear resistance compared to TiN coating layer. On the other hand, both TiN and TiAlN coating layers started to be partially failed between $10^2$ and $10^3$ impact cycle. Above $10^3$ impact cycle, TiN and TiAlN coating layers showed similar impact behavior because of the substrate effect.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.658-659
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• 2006

Magnetron sputtered TiN, (Ti, Al)N and TiN/(Ti, Al)N multilayer coatings grown on cemented carbide substrates have been characterized by using electron probe microanalysis (EPMA), X-ray diffraction (XRD), scanning electron spectroscopy (SEM), nanoindentation, scratcher and cutting tests. Results show that TiN coating is bell mouth columnar structures, (Ti, Al)N coating is straight columnar structures and the modulation structure has been formed in the TiN/(Ti, Al)N multilayer coating. TiN/(Ti, Al)N multilayer coating exhibited higher hardness, better adhesion with substrate and excellent cutting performance compared with TiN and (Ti, Al)N coating.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.