• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.123-130
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• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.484-490
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• 1999

$(Pb,La)TiO_3$(PLT) thin films were prepared on Pt/SiO$_2$/Si substrates by the sol-gel method and investigated the crystalline and electrical properties according to La concentration and post-annealing temperatures. The PLT films annealed at above $600^{\circ}C$ were exhibited the typical perovskite structures regardless of La contents. When the $(Pb,La)TiO_3$(PT) films were doped with La concentration up to 10mol%(PLT-10), the degree of z-axis orientation was greatly decreased from 63% to 26%. From AES depth profiles for the PLT-10 samples, no remarkable inter-reaction between PLT film and lower Pt electrode was found. The remanent polarization$(2Pr,Pr_+-Pr_-)$ were increased from $4\muC\textrm{cm}^2 to 16\muC\textrm{cm}^2$ as the annealing temperature increased from $600^{\circ}C to 700^{\circ}C$. This result may be ascribed to the improvement of crystallinity by the high temperature post-annealing. The dielectric constant$({\varepsilon}r)$ and tangent loss(tan$\delta$) of the PLT-10 films annealed at $650^{\circ}C$ were about 193 and 0.02, respectively with the pyroelectric coefficient($\gamma$) of around $4.0nC/\textrm{cm}^2{\cdot}^{\circ}C at 30^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.67-69
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• 2004

The $Pb(Zr,Ti)O_3$ thin films were fabricated with $Pb(La,Ti)O_3$ buffers in-situ onto $Pt/Ti/SiO_2/Si$ substrates by pulsed laser deposition technique using a Nd:YAG laser with energy density of $2.5J/cm^2$, and deposited for 10 minutes at $550^{\circ}C$ of substrate temperature. And then, the films have been annealed at $550^{\circ}C$ in oxygen ambient pressure. The remanent polarization value is increased by using buffer layers but coercive field of films is slightly increased.

• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.30-36
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• 2001

The crystal structures of fully dehydrated $Pd^{2+}$ - and $TI^{+}$ -exchanged zeolite X, $Pd_{18}TI_{56}Si_{100}Al_{92}O_{384}(Pd_{18}TI_{50-}X$, a = $24.935(4)\AA$ and $Pd_{21}TI_{50}Si_{100}Al_{92}O_{384}(Pd_{21}TI_{50-}X$ a = $24.914(4)\AA)$, have been determined by single-crystal X-ray diffraction methods in the cubic space group Fd3 at $21(1)^{\circ}C.$ The crystals were prepared using an exchange solution that had a $Pd(NH_3)_4Cl_2\;:TINO_3$ mole ratio of 50 : 1 and 200 : 1, respectively, with a total concentration of 0.05M for 4 days. After dehydration at $360^{\circ}C$ and 2 ${\times}$$10^{-6}$ Torr in flowing oxygen for 2 days, the crystals were evacuated at $21(1)^{\circ}C$ for 2 hours. They were refined to the final error indices $R_1$ = 0.045 and $R_2$ = 0.038 with 344 reflections for $Pd_{18}Tl_{56-}X$, and $R_1$ = 0.043 and $R_2$ = 0.045 with 280 reflections for $Pd_{21}Tl_{50-}X$; I > $3\sigma(I).$ In the structure of dehydrated $Pd_{18}Tl_{56-}X$, eighteen $Pd^{2+}$ ions and fourteen $TI^{+}$ ions are located at site I'. About twenty-seven $TI^{+}$ ions occupy site II recessed $1.74\AA$ into a supercage from the plane of three oxygens. The remaining fifteen $TI^{+}$ ions are distributed over two non-equivalent III' sites, with occupancies of 11 and 4, respectively. In the structure of $Pd_{21}Tl_{50-}X$, twenty $Pd^{2+}$ and ten $TI^{+}$ ions occupy site I', and one $Pd^{2+}$ ion is at site I. About twenty-three $TI^{+}$ ions occupy site II, and the remaining seventeen $TI^{+}$ ions are distributed over two different III' sites. $Pd^{2+}$ ions show a limit of exchange (ca. 39% and 46%), though their concentration of exchange was much higher than that of $TI^{+}$ ions. $Pd^{2+}$ ions tend to occupy site I', where they fit the double six-ring plane as nearly ideal trigonal planar. $TI^{+}$ ions fill the remaining I' sites, then occupy site II and two different III' sites. The two crystal structures show that approximately two and one-half I' sites per sodalite cage may be occupied by $Pd^{2+}$ ions. The remaining I' sites are occupied by $TI^{+}$ ions with Tl-O bond distance that is shorter than the sum of their ionic radii. The electrostatic repulsion between two large $TI^{+}$ ions and between $TI^{+}$ and $Pd^{2+}$ ions in the same $\beta-cage$ pushes each other to the charged six-ring planes. It causes the Tl-O bond to have some covalent character. However, $TI^{+}$ ions at site II form ionic bonds with three oxygens because the super-cage has the available space to obtain the reliable ionic bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.279-279
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• 2010

한국형 헬륨 냉각 고체형 증식(Helium Cooled Solid Breeder : HCSB) 시험 블랑켓(Test Blanket Module : TBM)은 삼중수소 증식을 위해서 $Li_2TiO_3$ 및 $Li_4SiO_4$ 페블을 고려하고 있으며, 중성자 반사 재료로는 SiC가 코팅된 흑연 페블을 사용할 예정이다. $Li_2TiO_3$ 및 $Li_4SiO_4$ 페블을 제조하기 위해서는 먼저 각각의 분말 제조가 선행되어야 한다. $Li_2TiO_3$ 분말을 합성하기 위해서는 먼저 Lithium 금속염과 Isopropoxide를 용매 및 폴리머 캐리어로서의 두 가지 기능을 하는 에틸렌글리콜에 첨가한 후 가열하여 완전히 용해시킨 후 혼합 용액을 건조시켜 겔형의 전구체를 제조한다. 이를 하소한 후 결정화시켜 Titanate 분말을 얻는데 이때의 건조, 하소 및 결정화 온도의 조건에 따른 분말의 크기 및 특성이 각각 다르다. 즉 하소 온도가 $600^{\circ}C$ 미만이면 열분해된 폴리머로부터 잔유 탄소가 남게 되고, $700^{\circ}C$를 초과하면 결정화가 시작된다. 이렇게 얻어진 Titanate분말은 지르코니아 볼을 이용하여 약 24 시간 동안 볼 밀링 과정을 통해 입도분포가 좁은 미세한 Titanate 분말로 만들었다. $Li_2TiO_3$ 페블은 위의 과정에서 얻어진 미세분말에 바인더를 이용하여 페블화 시킨 후 $1200^{\circ}C$의 전기로에서 최종 소결한 것이다. 중성자 반사 재료인 흑연페블은 강도가 약하기 때문에 표면에 SiC를 수 ${\mu}m$ 코팅해서 사용할 예정이다. 선행실험으로 건식법을 이용하여 SiC 코팅을 실시했으며, 그 결과를 소개할 것이다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.626-633
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• 1998

For the fabrication of low temperature cofirable glass/ceramic with high dielectric constant, crystallizing glass [$SiO_2-TiO_2-RO (RO:BaO, CaO:SrO)$] was formed. The glass/ceramic composites were made by mixing this glass and alumina ceramic as filler, and its characteristics was investigated. With this glass compositon, it was possible to fabricate the glass which could be crystallized under $900^{\circ}C$. And it was found that the crystallizing temperature was changed in accordance with the composition of RO in glass. By adding $Bi_2O_3$ as flux, using $Al_2O_3$ as filler and sintering at $860^{\circ}C$, low temperature cofirable glass/ceramic with high dielectric constant was fabricated. The density of that composites was 3.96 g/$\textrm{cm}^3$, dielectric constant was 17 and Q. f was 600.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.545-549
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• 2001

Glass-ceramics were prepared and evaluated for the properties to expand the scope of application of the rare earth aluminosilicate glasses, A glass-ceramic added with $TiO_2$as a nucleating agent, which was crystallized internally and it was characterized for physical, thermal and mechanical properties of crystal and residual glass in the glass-ceramic, X-ray diffractometer reveals an unknown crystal as $Nd_{4.6}Si_{7.6}Al_{4.0}Ti_{2.4}O_{32}$ which was found in surface and internal crystals dependent on composition and heat treatments. The thermal expansion coefficients of glass-ceramics were $5.4~6.2{\times}10^{-6}/^{\circ}C$, which increased with increasing crystal growth. Considering that the hardness and the elastic constant of crystal in glass-ceramics are 12GPa and 220GPa, respectively, the application of the glass-ceramics would be applicable for structural materials at elevated temperature.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.9 no.6
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• pp.170-177
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• 2000

Dense $Al_2$O$_3$-30%TiC and Si$_3$N$_4$ ceramic tool materials with various grain size were produced by sintering-HIP treatment and by gas-pressure sintering. The fracture toughness was measured by indentation fracture and indentation strength method for both ceramics with various grain size. The effect of the grain size on the fracture toughness was evaluated, and the correlation between fracture toughness and mechanical properties such as hardness, Young\`s modulus and flexural strength of these ceramic were also investigated. The highest fracture toughness of around 6.7 MPa.m(sup)1/2 was obtained in Si$_3$N$_4$ ceramics with grain size of 1.58${\mu}{\textrm}{m}$. With a larger grain size of $Al_2$O$_3$-30%TiC and Si$_3$N$_4$ ceramics, the fracture toughness was generally increased. The increased fracture toughness of these ceramic also improved the flexural strength although the hardness decreased considerably. Similar results were obtained in grain size and mechanical properties on both $Al_2$O$_3$-30%TiC and Si$_3$N$_4$ ceramic tool materials.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.40-52
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• 1992

$PbTi0_3$ thin films were deposited at $550^{\circ}C$ by MOCVD method using titanium-iso-propoxide [$Ti(OC_3H_7)_4$] and tetra-ethyl-lead $[Pb(C_2H_5)_4]$as starting materials. In the present study, Ar and $O_2$were used as a carrier gas and a reaction gas, respectively, and the change of thickness and refractive index, Xray diffraction analysis, and CV characteristic measurements of the films were systematically investigated. As a result of CV characteristic analysis of the annealed $PbTiO_3$ thin films, it is assumed that the films interact with Si substrate at the interface, and X-ray diffraction patterns of the films show characteristic peaks for $PbTiO_3$ With increasing the annealing temperature and time, the thickness of the films tends to decrease but their refractive index increases.